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IPW60R125CFD7XKSA1

IPW60R125CFD7XKSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO-247-3

  • 描述:

    MOSFET N-CH 600V 18A TO247-3

  • 数据手册
  • 价格&库存
IPW60R125CFD7XKSA1 数据手册
Product brief 600 V CoolMOS™ CFD7 SJ MOSFET Infineon’s answer to resonant high-power topologies The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. It is the ideal choice for resonant topologies in high power SMPS applications, such as server, telecom and EV charging stations. The new CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 family. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69 percent lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Due to these features CoolMOS™ CFD7 offers highest efficiency and best-in-class reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. In addition, CoolMOS™ CFD7 enables higher power density thanks to its optimized RDS(on). All together, this latest fast body diode series brings clear benefits compared to competitor offerings by combining the advantages of a fast switching technology with superior commutation ruggedness without sacrificing easy implementation in the design-in process. Qrr comparison of 170 mΩ CFDofvs. 190mΩ mΩCFD range competition* Qrr comparison 170 vs. 190 mΩ range competition* Key features › Ultrafast body diode › Best-in-class reverse recovery charge (Qrr) › Improved reverse diode dv/dt and dif/dt ruggedness › Lowest FOM R › Best-in-class R combinations Key benefits › Best-in-class hard commutation ruggedness › Highest reliability for resonant topologies › Highest efficiency with outstanding ease-of-use/performance trade-off › Enabling increased power density 1200 solutions 1000 -69 % 800 Qrr [nC] x Qg and Eoss /package DS(on) DS(on) World‘s best Qrr got even better! 600 -32 % 400 200 0 Comp. C Comp. A Comp. D *Comparison basedbased on datasheet values *Comparison on datasheet values www.infineon.com/cfd7 Comp. B CFD2 CFD7 Product brief 600 V CoolMOS™ CFD7 SJ MOSFET Infineon’s answer to resonant high power topologies The application measurements shown below illustrate that the features of the latest CoolMOS™ CFD7 family result in significant efficiency improvements in resonant switching topologies. CoolMOS™ CFD7 offers up to 1.45 percent increased energy efficiency over the main competition on the market and exceeds the requirements of the targeted applications. Efficiency comparison of CFD7 vs. CFD2 and competition in 2 kW ZVS Efficiency comparison of CFD7 vs. CFD2 and competition in 3 kW LLC 1 0.8 0.8 0.7 0.2 Δ 1.45% Δ 0.17% -0.2 Δ Efficiency [%] Δ Efficiency [%] 0.4 -0.4 Competitor A 0.5 0.4 Competitor B 0.3 Competitor C Δ 0.79% 0.2 Competitor D 0.1 Δ 0.22% 0 -0.1 -0.6 -0.8 IPW65R080CFD 0.6 0.6 0 IPW60R070CFD7 -0.2 0 10 20 30 Load current [A] 40 -0.3 0 5 10 15 Load current [A] 20 25 30 600 V CoolMOS™ CFD7 product portfolio RDS(on) max. [mΩ] TO-263 D²PAK TO-252 DPAK 360 280 210/215 170/185 145/160 125/140 105/115 90/95 70/75 55/60 40/45 31/35 24/26 18/20 15 IPB60R360CFD7 IPB60R280CFD7 IPB60R210CFD7 IPD60R210CFD7 IPB60R170CFD7 IPB60R145CFD7 TO-220 TO-220 FullPAK IPD60R360CFD7 IPP60R360CFD7 IPA60R360CFD7 IPD60R280CFD7 IPP60R280CFD7 IPA60R280CFD7 IPL60R225CFD7 IPP60R210CFD7 IPA60R210CFD7 IPD60R170CFD7 IPL60R185CFD7 IPP60R170CFD7 IPA60R170CFD7 IPW60R170CFD7 IPD60R145CFD7 IPL60R160CFD7 IPP60R145CFD7 IPA60R145CFD7 IPW60R145CFD7 IPT60R145CFD7 IPDD60R145CFD7 IPB60R125CFD7 IPL60R140CFD7 IPP60R125CFD7 IPA60R125CFD7 IPW60R125CFD7 IPT60R125CFD7 IPDD60R125CFD7 IPB60R105CFD7 IPL60R115CFD7 IPP60R105CFD7 IPW60R105CFD7 IPT60R105CFD7 IPDD60R105CFD7 IPB60R090CFD7 IPL60R095CFD7 IPP60R090CFD7 IPW60R090CFD7 IPT60R090CFD7 IPDD60R090CFD7 IPB60R070CFD7 IPL60R075CFD7 IPP60R070CFD7 IPW60R070CFD7 IPT60R075CFD7 IPDD60R075CFD7 IPB60R055CFD7 IPL60R060CFD7 IPW60R055CFD7 IPT60R055CFD7 IPDD60R055CFD7 IPDQ60R055CFD7* IPW60R040CFD7 IPT60R045CFD7 IPDD60R045CFD7 IPDQ60R045CFD7* IPW60R031CFD7 IPT60R035CFD7 IPB60R040CFD7 ThinPAK 8x8 TO-247 TOLL DDPAK QDPAK IPDD60R170CFD7 IPDQ60R075CFD7* IPDQ60R035CFD7* IPW60R024CFD7 IPDQ60R025CFD7* IPW60R018CFD7 IPDQ60R020CFD7* IPDQ60R015CFD7* * Coming soon By combining the 600 V CoolMOS™ CFD7 with the 2EDN EiceDRIVER™ family, Infineon enables optimized system solutions for high-power designs. For more information visit: www.infineon.com/edn Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2020 Infineon Technologies AG. All Rights Reserved. Please note! THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Document number: B152-I1104-V1-7600-EU-EC-P Date: 11 / 2020 Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any life-­ endangering applications, including but not limited to medical,­­ nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.