IRF100B202

StrongIRFET™ IRF100B202 HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   S TO-220 max 8.6m 97A TO-220AB IRF100B202 D Drain Standard Pack Form Quantity Tube 50 25 S Source Orderable Part Number IRF100B202 100 ID = 58A 80 20 TJ = 125°C 15 10 TJ = 25°C 60 40 20 5 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On– Resistance vs. Gate Voltage 1 7.2m S D G ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) IRF100B202 RDS(on) typ. ID (Silicon Limited) G Gate Package Type 100V G Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant, Halogen-Free Base part number VDSS D www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback August 18, 2014 IRF100B202   Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Max. 97 68 380 221 1.5 ± 20 Units A  W W/°C V -55 to + 175   °C   300 10 lbf·in (1.1 N·m)   Avalanche Characteristics  EAS (Thermally limited) EAS (Thermally limited) EAS (tested) IAR EAR 189 Single Pulse Avalanche Energy  Single Pulse Avalanche Energy  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  mJ 292 217 See Fig 15, 16, 23a, 23b   Thermal Resistance   Symbol Parameter Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient  RJA Typ. ––– 0.50 ––– Max. 0.68 ––– 62 A mJ Units °C/W   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 100 Typ. Max. ––– ––– Units Conditions V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current ––– 2.0 ––– ––– ––– ––– ––– 7.2 ––– ––– ––– ––– ––– 2.4 8.6 4.0 20 250 100 -100 ––– m VGS = 10V, ID = 58A  V VDS = VGS, ID = 150µA VDS =100 V, VGS = 0V µA VDS = 80V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V  IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Reference to 25°C, ID = 5mA  Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.113mH, RG = 50, IAS = 58A, VGS =10V.  ISD  58A, di/dt  1316A/µs, VDD  V(BR)DSS, TJ 175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 24A, VGS =10V.  This value determined from sample failure population, starting TJ =25°C, L= 0.113mH, RG = 50, IAS =58A, VGS =10V. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 IRF100B202   Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 123 ––– ––– ––– ––– ––– ––– Typ. ––– 77 20 23 54 11 56 td(off) Turn-Off Delay Time ––– 55 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 58 4476 319 154 ––– 355 ––– VGS = 0V, VDS = 0V to 80V ––– 385 ––– VGS = 0V, VDS = 0V to 80V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 97 ––– ––– 380 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– ––– ––– 28 51 58 105 133 ––– ––– ––– ––– ––– IRRM Reverse Recovery Current ––– 3.7 ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID =58A 116 ID = 58A ––– VDS = 50V nC   ––– VGS = 10V ––– ––– VDD = 65V ID = 58A ––– ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF   VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.5 Diode Characteristics   Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 58A,VGS = 0V  V/ns TJ = 175°C,IS =58A,VDS = 100V TJ = 25°C VDD = 85V ns TJ = 125°C IF = 58A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C Submit Datasheet Feedback  August 18, 2014 IRF100B202   1000 1000 100 BOTTOM VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 10 4.0V 100 BOTTOM 4.0V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C 1 0.1 Tj = 175°C 1 10 1 100 0.1 VDS, Drain-to-Source Voltage (V) 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 4. Typical Output Characteristics 1000 100 10 TJ = 175°C TJ = 25°C 1 VDS = 50V 60µs PULSE WIDTH 0.1 ID = 58A VGS = 10V 2.5 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 8 -60 60 100 140 180 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss 1000 20 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 -20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Coss Crss 100 ID = 58A 12 VDS = 80V VDS = 50V 10 VDS= 20V 8 6 4 2 0 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 1 www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback August 18, 2014 IRF100B202   1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 175°C TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 1msec 10 10msec Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 0.1 2.0 1 10 100 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 2.0 130 Id = 5.0mA 1.6 120 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) DC 110 100 1.2 0.8 0.4 0.0 90 0 -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Temperature ( °C ) 20 60 80 100 120 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS (on), Drain-to -Source On Resistance (m) 40 Fig 12. Typical Coss Stored Energy 40 VGS = 5.0V VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 35 30 25 20 15 10 5 0 20 40 60 80 100 120 ID, Drain Current (A) Fig 13. Typical On– Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 IRF100B202   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 58A 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Submit Datasheet Feedback August 18, 2014 IRF100B202   30 3.5 25 IF = 39A VR = 85V 3.0 20 TJ = 25°C TJ = 125°C IRRM (A) VGS(th), Gate threshold Voltage (V) 4.0 2.5 2.0 1.5 15 10 ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 5 0 1.0 -75 -50 -25 0 100 200 300 400 500 600 700 800 900 1000 25 50 75 100 125 150 175 diF /dt (A/µs) TJ , Temperature ( °C ) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 1600 25 TJ = 25°C TJ = 125°C 1200 15 QRR (nC) IRRM (A) 20 IF = 39A VR = 85V IF = 58A VR = 85V 10 TJ = 25°C TJ = 125°C 800 400 5 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 1600 IF = 58A VR = 85V QRR (nC) 1200 TJ = 25°C TJ = 125°C 800 400 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 IRF100B202   Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback August 18, 2014 IRF100B202   TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 IRF100B202   Qualification Information†   Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level TO-220 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014