IRF3205ZPBF

PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS(on) = 6.5mΩ G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A S D2Pak IRF3205ZS TO-220AB IRF3205Z TO-262 IRF3205ZL Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM 75 440 PD @TC = 25°C Power Dissipation 170 W 1.1 ± 20 W/°C V 180 mJ c VGS EAS (Thermally limited) Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy EAS (Tested ) Single Pulse Avalanche Energy Tested Value c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range d °C i Parameter RθJC Junction-to-Case RθCS Case-to-Sink, Flat Greased Surface RθJA Junction-to-Ambient www.irf.com A -55 to + 175 Thermal Resistance Junction-to-Ambient (PCB Mount) 250 mJ Mounting Torque, 6-32 or M3 screw i h See Fig.12a, 12b, 15, 16 g Soldering Temperature, for 10 seconds RθJA A 78 j i 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. Units ––– 0.90 °C/W 0.50 ––– ––– 62 ––– 40 1 10/7/03 IRF3205ZS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 4.9 6.5 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 gfs IDSS Forward Transconductance 71 ––– ––– S VDS = 25V, ID = 66A Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 66A e V VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V, TJ = 125°C Gate-to-Source Reverse Leakage ––– ––– -200 Qg VGS = -20V Total Gate Charge ––– 76 110 Qgs Gate-to-Source Charge ––– 21 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 30 ––– VGS = 10V td(on) Turn-On Delay Time ––– 18 ––– VDD = 28V tr Rise Time ––– 95 ––– td(off) Turn-Off Delay Time ––– 45 ––– tf Fall Time ––– 67 ––– VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– Between lead, LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Input Capacitance ––– 3450 ––– and center of die contact VGS = 0V Coss Output Capacitance ––– 550 ––– Crss Reverse Transfer Capacitance ––– 310 ––– Coss Output Capacitance ––– 1940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ID = 66A nC VDS = 44V e ID = 66A ns nH RG = 6.8 Ω e VDS = 25V pF ƒ = 1.0MHz Coss Output Capacitance ––– 430 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 640 ––– VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 ISM (Body Diode) Pulsed Source Current ––– ––– 440 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 25 38 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 66A, VGS = 0V e TJ = 25°C, IF = 66A, VDD = 25V di/dt = 100A/µs e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF3205ZS/L 1000 1000 VGS VGS TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 100 4.5V 20µs PULSE WIDTH Tj = 25°C 1 10 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 T J = 25°C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20µs PULSE WIDTH Tj = 175°C T J = 175°C 100 10 VDS = 25V 20µs PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com T J = 175°C 100 80 T J = 25°C 60 40 20 VDS = 10V 20µs PULSE WIDTH 0 11.0 0 20 40 60 80 100 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF3205ZS/L 6000 20 5000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 4000 Ciss 3000 2000 1000 Coss Crss VDS= 44V VDS= 28V VDS= 11V 16 12 8 4 0 0 1 ID= 66A 10 0 100 20 40 60 80 100 120 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 T J = 175°C 100.0 100 10.0 T J = 25°C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100µsec 10 1msec 1 0.1 2.2 Tc = 25°C Tj = 175°C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3205ZS/L 120 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 175 ID = 66A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 T C , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3205ZS/L DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 350 15V ID TOP 300 BOTTOM 27A 47A 66A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform L VCC VGS(th) Gate threshold Voltage (V) QGS ID = 250µA 3.0 2.0 DUT 0 1.0 1K -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF3205ZS/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 66A 160 120 80 40 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 7 IRF3205ZS/L D.U.T Driver Gate Drive + ƒ + ‚ „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - D= Period P.W. VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF3205ZS/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO LOT CODE www.irf.com PART NUMBER DAT E CODE 9 IRF3205ZS/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 10 PART NUMBER F530S DAT E CODE www.irf.com IRF3205ZS/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C 11 IRF3205ZS/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.08mH † This value determined from sample failure population. 100% RG = 25Ω, IAS = 66A, VGS =10V. Part not tested to this value in production. recommended for use above this value. ‡ This is only applied to TO-220AB pakcage. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR„ Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS .  Repetitive rating; pulse width limited by TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03 12 www.irf.com