IRF6775MTRPbF
DIGITAL AUDIO MOSFET
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 250W per channel into 4Ω Load in
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
150
VDS
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max.
47
25.0
3.0
V
m:
nC
5
&
)
&
5
DirectFET ISOMETRIC
MZ
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
150
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
ID @ TC = 25°C
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
28
4.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.9
IDM
Pulsed Drain Current
39
PD @TC = 25°C
Maximum Power Dissipation
89
PD @TA = 25°C
Power Dissipation
2.8
PD @TA = 70°C
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
e
Power Dissipation e
c
TJ
TSTG
Storage Temperature Range
RθJA
Junction-to-Ambient
W
1.8
d
33
e
Linear Derating Factor
Operating Junction and
A
mJ
5.6
A
0.022
-40 to + 150
W/°C
°C
Thermal Resistance
Parameter
RθJC
ek
Junction-to-Ambient hk
Junction-to-Ambient ik
Junction-to-Case jk
RθJ-PCB
Junction-to-PCB Mounted
RθJA
RθJA
Typ.
Max.
Units
–––
45
°C/W
12.5
–––
20
–––
–––
1.4
1.4
–––
Notes through are on page 2
1
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IRF6775MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Conditions
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.17
–––
V/°C
Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 5.6A
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
–––
IGSS
RG(int)
–––
47
56
3.0
–––
5.0
V
–––
–––
20
μA
–––
250
VGS = 0V, ID = 250μA
f
VDS = VGS, ID = 100μA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
Internal Gate Resistance
–––
–––
3.0
Ω
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
Parameter
11
–––
–––
S
Qg
Conditions
VDS = 50V, ID = 5.6A
Total Gate Charge
–––
25
36
VDS = 75V
Qgs1
Pre-Vth Gate-to-Source Charge
–––
5.8
–––
VGS = 10V
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.4
–––
Qgd
Gate-to-Drain Charge
–––
6.6
–––
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
11
–––
Qsw
–––
8.0
–––
td(on)
Turn-On Delay Time
–––
5.9
–––
tr
Rise Time
–––
7.8
–––
td(off)
Turn-Off Delay Time
–––
5.8
–––
tf
Fall Time
–––
15
–––
VGS = 10V
ID = 5.6A
nC
See Fig. 6 and 17
VDD = 75V
ID = 5.6A
ns
RG = 6.0Ω
f
Ciss
Input Capacitance
–––
1411
–––
VGS = 0V
Coss
Output Capacitance
–––
193
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
40
–––
Coss
Output Capacitance
–––
1557
–––
Coss
Output Capacitance
–––
93
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
175
–––
VGS = 0V, VDS = 0V to 120V
Min.
Typ.
Max.
–––
–––
28
–––
–––
39
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
g
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
ISM
c
Conditions
Units
MOSFET symbol
A
D
showing the
integral reverse
G
p-n junction diode.
(Body Diode)
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 5.6A, VGS = 0V
trr
Reverse Recovery Time
–––
62
–––
ns
TJ = 25°C, IF = 5.6A, VDD = 25V
Qrr
Reverse Recovery Charge
–––
164
–––
nC
di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.53mH, RG = 25Ω, IAS = 11.2A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
2
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f
f
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top
(Drain) of part.
Rθ is measured at TJ of approximately 90°C.
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S
IRF6775MTRPbF
100
100
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
5.5V
BOTTOM
10
5.5V
≤ 60μs PULSE WIDTH
Tj = 150°C
≤ 60μs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
0.1
100
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(Α)
100
Fig 1. Typical Output Characteristics
VDS = 25V
≤ 60μs PULSE WIDTH
10
1
TJ = 150°C
TJ = 25°C
0.1
TJ = -40°C
0.01
3.0
4.0
5.0
6.0
7.0
ID = 5.6A
VGS = 10V
2.0
1.5
1.0
0.5
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
40
60
80 100 120 140 160
20
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
1000
20
Fig 4. Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
10
VDS, Drain-to-Source Voltage (V)
100
Coss
100
Crss
ID= 5.6A
VDS= 120V
VDS= 75V
VDS= 30V
16
12
8
4
0
10
1
10
100
0
1000
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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10
20
30
40
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
3
1
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF6775MTRPbF
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150°C
TJ = 25°C
1
TJ = -40°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
0.1
1.5
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
30
VGS(th) Gate threshold Voltage (V)
5.0
25
ID , Drain Current (A)
10msec
20
15
10
5
0
ID = 100μA
4.5
ID = 250μA
4.0
3.5
3.0
2.5
2.0
25
50
75
100
125
150
-75
-50
-25
TC , CaseTemperature (°C)
0
25
50
75
100
125
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
Thermal Response ( Z thJA )
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
τJ
0.1
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τA
τ2
τ1
τ2
τ3
τ3
τ4
τA
τ4
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
τi (sec)
1.2801
0.000322
8.7256
0.164798
21.750
2.25760
13.251
69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
150
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140
ID = 5.6A
120
100
TJ = 125°C
80
60
TJ = 25°C
40
4
6
8
10
12
14
100
RDS (on) , Drain-to-Source On Resistance (mΩ)
( Ω)
RDS (on), Drain-to -Source On Resistance m
IRF6775MTRPbF
VGS = 10V
90
TJ = 125°C
80
70
60
TJ = 25°C
50
40
16
0
5
VGS, Gate-to-Source Voltage (V)
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
DRIVER
L
VDS
15
20
Fig 13. On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
15V
10
ID , Drain Current (A)
140
I D
1.1A
1.4A
BOTTOM 11A
120
TOP
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
I AS
Fig 15b. Unclamped Inductive Waveforms
VDS
VGS
RD
VDS
90%
D.U.T.
RG
+
- VDD
10%
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 16a. Switching Time Test Circuit
5
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VGS
td(on)
tr
td(off)
tf
Fig 16b. Switching Time Waveforms
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IRF6775MTRPbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
S
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
Driver Gate Drive
D.U.T
P.W.
+
+
-
RG
*
•
•
•
•
**
P.W.
Period
D.U.T. ISD Waveform
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
***
Reverse
Recovery
Current
VDD
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
Qgs2 Qgs1
Qgd
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
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IRF6775MTRPbF
DirectFET™ Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF6775MTRPbF
DirectFET Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
DirectFET Part Marking
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
0.616
0.020
0.08
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
0.676
0.080
0.17
IMPERIAL
MAX
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF6775MTRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"
reel, order IRF6775TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
METRIC
MAX
CODE
MIN
MIN
MIN
MIN
MAX
MAX
MAX
6.9
12.992
N.C
A
330.0
177.77 N.C
N.C
N.C
0.75
0.795
N.C
B
20.2
19.06
N.C
N.C
N.C
0.50
C
0.53
0.504
12.8
13.5
0.520
12.8
13.2
D
0.059
0.059
N.C
1.5
1.5
N.C
N.C
N.C
E
2.31
3.937
N.C
100.0
58.72
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
13.50
18.4
G
0.47
0.488
N.C
12.4
11.9
0.567
12.01
14.4
H
0.47
0.469
N.C
11.9
11.9
0.606
12.01
15.4
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
METRIC
IMPERIAL
MIN
MIN
MAX
MAX
0.311
0.319
7.90
8.10
0.154
3.90
0.161
4.10
0.469
11.90
12.30
0.484
0.215
5.45
0.219
5.55
0.201
5.10
5.30
0.209
0.256
6.50
6.70
0.264
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF6775MTRPbF
Revision History
Date
2/26/2014
Comments
• Updated SOA curve figure 8 to extend x axis to 150V because this device is 150V, on page 4.
• Updated datasheet with new IR corporate template.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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