IRF7413TRPBF-1

IRF7413PbF-1 HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) ID 30 V 0.011 52 13 (@TA = 25°C) A A D S 1 8 Ω S 2 7 D nC S 3 6 D G 4 5 D A SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF7413PbF-1 SO-8 ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Tube/Bulk Tape and Reel Quantity 95 4000 Orderable Part Number IRF7413PbF-1 IRF7413TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS Max Units Power Dissipation 30 ± 20 13 9.2 58 2.5 EAS Linear Derating Factor Single Pulse Avalanche Energency 0.02 260 W mW/°C mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c d e V A Thermal Resistance Ratings Symbol RθJL Parameter Junction-to-Drain Lead Junction-to-Ambient g RθJA 1 www.irf.com © 2013 International Rectifier Typ Max ––– 20 ––– 50 Submit Datasheet Feedback Units °C/W November 19, 2013 IRF7413PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Min Typ 30 ––– ––– ––– 1.0 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.034 ––– ––– 0.011 ––– 0.018 ––– 3.0 ––– ––– ––– 12 ––– 25 ––– -100 ––– 100 52 79 6.1 9.2 16 23 ––– 3.7 8.6 ––– 50 ––– 52 ––– 46 ––– 1800 ––– 680 ––– 240 ––– Max Units Conditions V VGS = 0V, I D = 250μA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.3A Ω VGS = 4.5V, ID = 3.7A V VDS = VGS, ID = 250μA S VDS = 10V, ID = 3.7A VDS = 30V, VGS = 0V μA VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V nA VGS = 20V ID = 7.3A nC VDS = 24V VGS = 10V, See Fig. 6 and 9 Ω VDD = 15V ID = 7.3A ns RG = 6.2 Ω RG = 2.0Ω, See Fig. 10 VGS = 0V pF VDS = 25V ƒ = 1.0MHz, See Fig. 5 f f f f Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Min. Typ. Max. Units Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge c ––– ––– 3.1 ––– ––– 58 ––– ––– ––– ––– 74 200 1.0 110 300 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.3A, VGS = 0V TJ = 25°C, IF = 7.3A di/dt = 100A/μs e Notes:  Repetitive rating; pulse width limited by ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, ‚ Starting TJ = 25°C, L = 9.8mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS =7.3A. (See Figure 12) 2 T J ≤ 150°C … Surface mounted on FR-4 board † Rθ is measured at TJ approximately 90°C www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013 e IRF7413PbF-1 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20μs PULSE WIDTH TJ = 25°C A 1 0.1 1 3.0V 10 20μs PULSE WIDTH TJ = 150°C A 1 0.1 10 1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150°C TJ = 25°C 10 V DS = 10V 20μs PULSE WIDTH 1 3.0 3.5 4.0 A 4.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 V DS, Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) www.irf.com © 2013 International Rectifier I D = 7.3A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback A 100 120 140 160 November 19, 2013 IRF7413PbF-1 3200 V GS , Gate-to-Source Voltage (V) 2800 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd Coss 12 1600 1200 Crss 800 V DS = 24V V DS = 15V 16 2400 2000 I D = 7.3A 400 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25°C ID , Drain Current (A) ISD , Reverse Drain Current (A) 20 TJ = 150°C 100 10 VGS = 0V 1 0.4 1.2 2.0 2.8 A 3.6 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com © 2013 International Rectifier 100us 10 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 0.1 10ms 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback November 19, 2013 A IRF7413PbF-1 V DS QG 10V QGS VGS QGD D.U.T. RG VG RD + - VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50KΩ 12V 90% .2μF .3μF D.U.T. + V - DS 10% VGS VGS 3mA td(on) IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013 15V L VDS D.U.T RG IAS 20V DRIVER + - VDD 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRF7413PbF-1 600 TOP 500 BOTTOM ID 3.3A 6.0A 7.3A 400 300 200 100 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( oC) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013 IRF7413PbF-1 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG • • • • Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013 IRF7413PbF-1 SO-8 Package Outline Dimensions are shown in millimeters (inches) D DIM B 5 A 8 6 7 6 2 3 .0688 1.35 1.75 4 A1 .0040 0.25 .0098 0.10 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC A e1 6X e e1 0.25 [.010] H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] A1 8X b MAX .013 H 1 MIN .0532 b 5 0.25 [.010] MILLIMETERS MAX A E INCHES MIN 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET) INT ERNAT IONAL RECTIFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASS EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013 IRF7413PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ † Qualification information Industrial Qualification level Moisture Sensitivity Level (per JEDE C JE S D47F SO-8 RoHS compliant †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013