IRF7416TRPBF

PD - 95137A IRF7416PbF l l l l l l l l HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = -30V RDS(on) = 0.02Ω Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter Max. ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -7.1 IDM Pulsed Drain Current PD @TA = 25°C VGS Power Dissipation Linear Derating Factor Gate-to-Source Voltage EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range c Units A -45 e d 2.5 0.02 ± 20 W W/°C V 370 mJ -5.0 V/ns -55 to + 150 °C Max. Units 50 °C/W Thermal Resistance Parameter RθJA www.irf.com Junction-to-Ambient g 1 06/29/11 IRF7416PbF Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Conditions -30 ––– ––– V VGS = 0V, ID = -250μA ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA VGS = -10V, ID = -5.6A ––– ––– 0.020 Ω VGS = -4.5V, ID = -2.8A ––– ––– 0.035 -1.0 ––– -2.04 V VDS = VGS, ID = -250μA 5.6 ––– ––– S VDS = -10V, ID = -2.8A VDS = -24V, VGS = 0V ––– ––– -1.0 μA VDS = -24V, VGS = 0V, TJ = 125°C ––– ––– -25 VGS = -20V ––– ––– -100 nA ––– ––– 100 VGS = 20V f f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 61 8.0 22 18 49 59 60 1700 890 410 92 12 32 ––– ––– ––– ––– ––– ––– ––– nC ns pF ID = -5.6A VDS = -24V VGS = -10V, See Fig. 6 & 9 VDD = -15V ID = -5.6A RG = 6.2Ω RD = 2.7Ω, See Fig. 10 VGS = 0V VDS = -25V ƒ = 1.0MHz, See Fig. 5 f f Diode Characteristics Parameter IS Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge c Min. Typ. Max. Units ––– ––– -3.1 A ––– ––– -45 ––– ––– ––– ––– 56 99 -1.0 85 150 Conditions MOSFET symbol V ns nC showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = -5.6A, VGS = 0V TJ = 25°C,IF = -5.6A di/dt = 100A/μs e e Notes:  Repetitive rating; pulse width limited by ƒ ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, ‚ Starting TJ = 25°C, L = 25mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS = -5.6A. (See Figure 12) 2 T J ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com IRF7416PbF 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP TOP 10 -3.0V 20μs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 -3.0V 20μs PULSE WIDTH TJ = 150°C A 1 0.1 10 1 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 100 TJ = 25°C TJ = 150°C 10 VDS = -10V 20μs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 5.5 A I D = -5.6A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7416PbF 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 4000 3000 Ciss Coss 2000 1000 Crss 0 1 10 100 I D = -5.6A VDS = -24V VDS = -15V 16 12 A 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 0 VDS , Drain-to-Source Voltage (V) 60 80 100 -IID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150°C 10 TJ = 25°C VGS = 0V 1 0.4 0.6 0.8 1.0 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.2 100us 10 1ms 10ms TA = 25 °C TJ = 150 ° C Single Pulse 1 0.1 1 10 A 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 -ISD , Reverse Drain Current (A) 40 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 20 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7416PbF QG -10V QGS RD VDS V GS D.U.T. RG QGD VG - + VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. td(on) 50KΩ 12V tr t d(off) tf VGS .2μF .3μF 10% +VDS D.U.T. VGS 90% -3mA VDS IG ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7416PbF D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) 1000 L VDS ID -2.5A -4.5A BOTTOM -5.6A TOP 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (o C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRF7416PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ + **  RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [ VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 7 IRF7416PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC e1 6X MILLIMETERS MIN A E INCHES DIM B H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER 8 www.irf.com IRF7416PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/2011 www.irf.com 9