IRF9952TRPBF

PD - 95135 IRF9952PbF l l l l l l l HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 3 6 D2 4 5 D2 VDSS Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. SO-8 Symbol TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range -30V Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Drain-Source Voltage Gate-Source Voltage 30V RDS(on) 0.10Ω 0.25Ω P-CHANNEL MOSFET Description Continuous Drain Current… N-Ch P-Ch D1 V DS V GS ID IDM IS Maximum P-Channel N-Channel 30 ± 20 3.5 2.8 16 1.7 EAS IAR EAR dv/dt TJ, TSTG V -2.3 -1.8 -10 -1.3 2.0 1.3 PD 44 2.0 Units A W 57 -1.3 0.25 mJ A mJ V/ ns 5.0 -5.0 -55 to + 150 °C Symbol Limit Units RθJA 62.5 °C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient … www.irf.com 1 09/15/04 IRF9952PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current I GSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 30 -30 — — — — — — 1.0 -1.0 — — — — — — –– — — — — — — — — — — — — — — — — — — — — N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ. Max. — — — — 0.015 — 0.015 — 0.08 0.10 0.12 0.15 0.165 0.250 0.290 0.400 — — — — 12 — 2.4 — — 2.0 — -2.0 — 25 — -25 — ±100 6.9 14 6.1 12 1.0 2.0 1.7 3.4 1.8 3.5 1.1 2.2 6.2 12 9.7 19 8.8 18 14 28 13 26 20 40 3.0 6.0 6.9 14 190 — 190 — 120 — 110 — 61 — 54 — Units V V/°C Ω V S µA nA nC ns pF Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.2A „ VGS = 4.5V, ID = 1.0A „ VGS = -10V, ID = -1.0A „ VGS = -4.5V, ID = -0.50A „ VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 3.5A „ VDS = -15V, I D = -2.3A „ VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, V GS = 0V, TJ = 125°C VDS = -24V, VGS = 0V, TJ = 125°C VGS = ±20V N-Channel I D = 1.8A, VDS = 10V, VGS = 10V P-Channel I D = -2.3A, V DS = -10V, VGS = -10V N-Channel VDD = 10V, ID = 1.0A, R G = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, RD = 10Ω „ „ N-Channel V GS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel V GS = 0V, VDS = -15V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 1.7 — — -1.3 A — — 16 — — 16 — 0.82 1.2 TJ = 25°C, IS = 1.25A, V GS = 0V ƒ V — -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V ƒ — 27 53 N-Channel ns — 27 54 TJ = 25°C, IF =1.25A, di/dt = 100A/µs — 28 57 P-Channel „ nC TJ = 25°C, IF = -1.25A, di/dt = 100A/µs — 31 62 Notes:  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 23 ) … Surface mounted on FR-4 board, t ≤ 10sec. ‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. 2 www.irf.com IRF9952PbF N-Channel 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20µs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 3.0V 20µs PULSE WIDTH TJ = 150°C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) TJ = 25°C 10 TJ = 150°C V DS = 10V 20µs PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 6.0 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 A 1.4 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF9952PbF RDS (on) , Drain-to-Source On Resistance (Ω) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 N-Channel ID = 2.2A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.12 0.10 VGS = 4.5V 0.08 VGS = 10V 0.06 0.04 80 100 120 140 160 0 2 TJ , Junction Temperature ( °C) 0.12 0.10 0.08 I D = 3.5A 0.06 0.04 0.02 0.00 A 9 12 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance (Ω) 0.14 6 8 10 12 A Fig 6. Typical On-Resistance Vs. Drain Current 0.16 3 6 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 0 4 15 100 TOP BOTTOM 80 ID 0.89A 1.6A 2.0A 60 40 20 A 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF9952PbF N-Channel 350 250 VGS , Gate-to-Source Voltage (V) 300 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss Coss 200 150 Crss 100 50 0 A 1 10 100 ID = 1.8A VDS = 10V 16 12 8 4 0 0 2 4 6 8 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF9952PbF 100 P-Channel 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 1 -3.0V 20µs PULSE WIDTH TJ = 25°C A 0.1 0.1 1 10 1 -3.0V 20µs PULSE WIDTH TJ = 150°C A 0.1 10 0.1 -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics 100 -ISD , Reverse Drain Current (A) -ID , Drain-to-Source Current (A) 10 Fig 13. Typical Output Characteristics 100 10 TJ = 25°C T J = 150°C 1 VDS = -10V 20µs PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 8.0 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 6 1 -VDS , Drain-to-Source Voltage (V) A 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage www.irf.com IRF9952PbF R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS(on) , Drain-to-Source On Resistance ( Ω ) P-Channel ID = -1.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 2.0 1.5 VGS = -4.5V 1.0 0.5 VGS = -10V 0.0 80 100 120 140 160 A 0.0 TJ , Junction Temperature ( °C) 1.0 2.0 3.0 150 EAS , Single Pulse Avalanche Energy (mJ) 0.60 I D = -2.3A 0.20 0.00 A 0 3 6 9 12 -V GS , Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage www.irf.com 5.0 Fig 17. Typical On-Resistance Vs. Drain Current 0.80 0.40 4.0 -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( Ω ) 2.5 15 ID -0.58A -1.0A BOTTOM -1.3A TOP 120 90 60 30 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 7 IRF9952PbF 400 P-Channel 20 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd C, Capacitance (pF) 300 Ciss Coss 200 Crss 100 0 A 1 10 100 ID = -2.3A VDS =-10V 16 12 8 4 0 0 2 4 6 8 10 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF9952PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 0.25 [.010] 1 6X 2 3 A 4 e e1 MAX MIN .0532 .0688 1.35 1.75 C A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° y 0.10 [.004] 0.25 [.010] MAX K x 45° A 8X b MILLIMET ERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOT PRINT NOT ES : 1. DIMENS IONING & T OLE RANCING PE R AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIME NS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ]. 4. OUT LINE CONFORMS T O JEDE C OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCE ED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCE ED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LE NGT H OF LEAD FOR S OLDERING T O A S UB S T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE : T HIS IS AN IRF 7101 (MOS FET ) INT ERNAT IONAL RECT IF IER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 9 IRF9952PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 10 www.irf.com