IRFB31N20DPBF

PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free HEXFET® Power MOSFET VDSS 200V Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Current IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF RDS(on) max ID 0.082Ω 31A TO-262 TO-220AB D2Pak IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 Units A W W/°C V V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Applicable Off Line SMPS Topologies l Telecom 48V Input DC/DC Active Clamp Reset Forward Converter Notes  through † www.irf.com are on page 11 1 3/1/04 IRFB/S/SL31N20DPbF Static @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS ∆V(BR)DSS/∆TJ Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.25 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.082 Ω VGS = 10V, ID = 18A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Typ. ––– 70 18 33 16 38 26 10 2370 390 78 2860 150 170 Max. Units Conditions ––– S VDS = 50V, ID = 18A 107 ID = 18A 23 nC VDS = 160V 65 VGS = 10V „ ––– VDD = 100V ––– ID = 18A ns ––– RG = 2.5Ω ––– RD = 5.4Ω, „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Typ. Max. Units ––– ––– ––– 420 18 20 mJ A mJ Typ. Max. Units ––– 0.50 ––– ––– 0.75 ––– 62 40 Thermal Resistance Parameter °C/W Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 31 ––– ––– showing the A G integral reverse ––– ––– 124 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 200 300 ns TJ = 25°C, IF = 18A ––– 1.7 2.6 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/S/SL31N20DPbF 1000 1000 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 100 100 10 1 5.5V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 10 5.5V 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 175 ° C 10 TJ = 25 ° C 1 V DS = 50V 20µs PULSE WIDTH 6 7 8 9 10 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 0.1 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 11 ID = 30A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB/S/SL31N20DPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 Crss VGS , Gate-to-Source Voltage (V) 20 100000 10 100 VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 10 1 ID = 18A 0 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 20 VDS, Drain-to-Source Voltage (V) 1000 ISD , Reverse Drain Current (A) 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 ° C 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) 1.2 100 10us 100us 10 1ms 1 TC = 25 ° C TJ = 175° C Single Pulse 1 10ms 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB/S/SL31N20DPbF 30 VGS 25 ID , Drain Current (A) RD V DS D.U.T. RG + -VDD 20 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 0 90% 25 50 75 100 125 150 TC , Case Temperature ( °C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/S/SL31N20DPbF DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 1000 15V TOP 800 BOTTOM ID 7.3A 15A 18A 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50KΩ 12V QGS .2µF .3µF QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB/S/SL31N20DPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFB/S/SL31N20DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 8 PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com IRFB/S/SL31N20DPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E C T IF IE R L OGO N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" P AR T N U M B E R F 5 30 S AS S E M B L Y L O T CO D E D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E www.irf.com P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E 9 IRFB/S/SL31N20DPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE 10 PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE www.irf.com IRFB/S/SL31N20DPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 4 3 Notes:  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. ‚ Starting TJ = 25°C, L = 3.8mH … Coss eff. is a fixed capacitance that gives the same charging time ƒ ISD ≤ 18A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, † This is only applied to TO-220AB package max. junction temperature. RG = 25Ω, IAS = 18A. TJ ≤ 175°C as Coss while VDS is rising from 0 to 80% VDSS ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/