IRFH5010TRPBF

IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Low Thermal Resistance to PCB (