IRFHS8242PbF
HEXFET® Power MOSFET
VDS
25
V
VGS max
±20
V
RDS(on) max
13.0
mΩ
(@VGS = 10V)
Qg (typical)
( @ VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
TOP VIEW
D 2
4.3
8.5
nC
d
G 3
D
6 D
D 1
D
S
D
D
5 D
D
4 S
D
G
S
S
2mm x 2mm PQFN
A
Applications
• System/Load Switch
Features and Benefits
Features
Low RDSon (≤ 13.0mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRFHS8242TRPbF
IRFHS8242TR2PbF
PQFN 2mm x 2mm
PQFN 2mm x 2mm
results in
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
±20
9.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
8.0
21
ID @ TC(Bottom)= 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
25
PD @TA = 70°C
TJ
Linear Derating Factor
Operating Junction and
d
d
8.5d
17
TSTG
Storage Temperature Range
A
84
2.1
f
V
d
c
f
Power Dissipation f
Units
1.3
0.02
-55 to + 150
W
W/°C
°C
Notes through are on page 2
1
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Submit Datasheet Feedback
December 17, 2013
IRFHS8242PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
BVDSS
ΔΒVDSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Parameter
25
–––
–––
18
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
10.0
17.0
13.0
21.0
VGS(th)
ΔVGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35
–––
1.8
-6.8
2.35
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
gfs
Qg
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
–––
19
–––
–––
-100
–––
4.3
10.4
–––
–––
nC
Qg
Qgs
–––
–––
VGS = 4.5V, VDS = 13V, ID = 8.5A
VDS = 13V
Gate-to-Source Charge
–––
–––
1.8
1.6
–––
–––
nC
VGS = 10V
ID = 8.5A (See Fig. 6 & 16)
Ω
h
Total Gate Charge h
h
h
Max. Units
Qgd
Gate-to-Drain Charge
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
–––
–––
1.9
6.5
–––
–––
Rise Time
Turn-Off Delay Time
–––
–––
19
5.4
–––
–––
Fall Time
Input Capacitance
–––
–––
5.3
653
–––
–––
Output Capacitance
–––
171
–––
Reverse Transfer Capacitance
–––
78
–––
Min.
Typ.
td(off)
tf
Ciss
Coss
Crss
Conditions
V
VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6.8A
V
VDS = VGS, ID = 25μA
mV/°C
μA
nA
S
ed
e
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 10V, ID = 8.5A
d
d
d
e
VDD = 13V, VGS = 4.5V
ns
= 8.5Ad
ID
RG=1.8Ω
See Fig.17
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
c
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
ton
Forward Turn-On Time
Max. Units
8.5
d
Conditions
MOSFET symbol
–––
–––
–––
–––
84
–––
–––
1.0
V
–––
–––
11
11
17
17
ns
nC
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 8.5A , VGS = 0V
TJ = 25°C, IF = 8.5A , VDD = 13V
di/dt = 280 A/μs
d
d
e
e
S
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (
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