IRFHS8342TR2PBF

IRFHS8342PbF HEXFET® Power MOSFET VDS 30 V VGS max ±20 V RDS(on) max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters • System/Load Switch Features and Benefits Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHS8342TRPbF IRFHS8342TR2PbF PQFN 2mm x 2mm PQFN 2mm x 2mm results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom)= 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range f f c f 30 ±20 8.8 Units V d 7.1 19 15 8.5 d d d 76 2.1 1.3 0.02 -55 to + 150 A W W/°C °C Notes  through … are on page 2 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs Qgd Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 22 13 20 1.8 -5.8 ––– ––– ––– ––– ––– 4.2 8.7 1.5 1.3 3.0 1.9 5.9 15 5.2 5.0 600 100 46 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.5A 16 mΩ 25 VGS = 4.5V, ID = 6.8A 2.35 V V = VGS, ID = 25μA ––– mV/°C DS 1.0 VDS = 24V, VGS = 0V μA 150 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 10V, ID = 8.5A ––– nC VGS = 4.5V, VDS = 15V, ID = 8.5A ––– VDS = 15V nC VGS = 10V ––– ID = 8.5A (See Fig. 6 & 16) ––– ––– nC VDS = 16V, VGS = 0V Ω ––– VDD = 15V, VGS = 4.5V ––– ID = 8.5A ––– ns ––– RG=1.8Ω ––– See Fig.17 ––– VGS = 0V ––– pF VDS = 25V ƒ = 1.0MHz ––– Min. Typ. Max. ––– ––– 8.5 ––– ––– 76 ed e d d d e d Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c d Units A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. ––– ––– 1.0 V TJ = 25°C, IS = 8.5A , VGS = 0V ––– 11 17 ns TJ = 25°C, IF = 8.5A , VDD = 15V ––– 13 20 nC di/dt = 330A/μs Time is dominated by parasitic Inductance d d e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (