IRFR3704TRL

PD - 93887D IRFR3704 IRFU3704 SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use HEXFET® Power MOSFET VDSS RDS(on) max ID 20V 9.5mΩ 75A High Frequency Buck Converters for Computer Processor Power l 100% RG Tested Benefits l l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3704 I-Pak IRFU3704 Absolute Maximum Ratings Symbol Max Parameter VDS Drain-Source Voltage VGS ID @ TC = 25°C Gate-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 75 ID @ TC = 70°C 63 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation TJ, TSTG Linear Derating Factor Junction and Storage Temperature Range Units 20 c V f f A 300 e e 90 W 62 0.58 -55 to +175 W/°C °C Thermal Resistance Symbol Parameter g RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) * RθJA Junction-to-Ambient g g Typ Max ––– 1.7 ––– 50 ––– 110 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through … are on page 9 www.irf.com 1 3/4/04 IRFR/U3704 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Min Typ Max Units Drain-to-Source Breakdown Voltage Parameter 20 ––– ––– Breakdown Voltage Temp. Coefficient ––– 0.021 ––– ––– 7.3 9.5 ––– 11 14 RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current 1.0 ––– 3.0 ––– ––– 10 ––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ V µA nA VGS = 10V, ID = 15A e e VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units 42 ––– ––– Conditions gfs Forward Transconductance Qg Total Gate Charge ––– 19 ––– Qgs Gate-to-Source Charge ––– 8.1 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 ––– QOSS Output Gate Charge ––– 16 24 RG Gate Resistance 0.3 ––– 3.2 td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 10V tr Rise Time ––– 98 ––– ID = 28.4A td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 5.0 ––– VGS = 4.5V Ciss Input Capacitance ––– 1996 ––– VGS = 0V Coss Output Capacitance ––– 1085 ––– Crss Reverse Transfer Capacitance ––– 155 ––– S VDS = 25V, ID = 57A ID = 28.4A nC VDS = 10V e VGS = 4.5V VGS = 0V, VDS = 10V Ω ns pF RG = 1.8Ω e VDS = 10V ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current c d Typ Max Units ––– 216 mJ ––– 71 A Diode Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c Min ––– Typ ––– Max Units 75 f A ––– ––– 300 ––– 0.88 1.3 ––– 0.82 ––– (Body Diode) VSD Diode Forward Voltage V trr Reverse Recovery Time ––– 38 57 ns Qrr Reverse Recovery Charge ––– 45 68 nC trr Reverse Recovery Time ––– 41 62 ns Qrr Reverse Recovery Charge ––– 50 75 nC 2 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 35.5A, VGS = 0V e e TJ = 125°C, IS = 35.5A, VGS = 0V TJ = 25°C, IF = 35.5A, VR = 20V di/dt = 100A/µs e TJ = 125°C, IF = 35.5A, VR= 20V di/dt = 100A/µs e www.irf.com IRFR/U3704 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 100 3.5V 10 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 3.5V 10 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 10 100 0.1 1 VDS , Drain-to-Source Voltage (V) 10 VDS, Drain-to-Source Voltage (V) 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics I D , Drain-to-Source Current (A) Fig 1. Typical Output Characteristics TJ = 25 ° C TJ = 175 ° C 100 10 3.0 V DS = 15V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3704 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 2000 1500 Coss 1000 500 ID = 28.4A VDS = 10V 8 6 4 2 Crss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us ID , Drain Current (A) 100 TJ = 175 ° C 100 10 TJ = 25 ° C 100us 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 10 VGS , Gate-to-Source Voltage (V) 3000 2.0 TC = 25 ° C TJ = 175 ° C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3704 LIMITED BY PACKAGE ID , Drain Current (A) RD VDS 80 VGS D.U.T. RG 60 + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.020 RDS(on) , Drain-to -Source On Resistance ( Ω ) RDS ( on ) , Drain-to-Source On Resistance ( Ω ) IRFR/U3704 VGS = 4.5V 0.015 0.010 VGS = 10V 0.005 0 50 100 150 200 250 0.010 0.009 0.008 ID = 35.5A 0.007 0.006 300 4.0 ID , Drain Current ( A ) 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD 600 EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V tp I AS DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms 6 A ID 11.6A 23.8A BOTTOM 28.4A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRFR/U3704 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) LEAD ASSIGNMENTS 1 - GATE 3 0.89 (.035) 0.64 (.025) 0.25 (.010) 2 - DRAIN 3 - SOURCE 4 - DRAIN 0.58 (.023) 0.46 (.018) M A M B NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information www.irf.com 7 IRFR/U3704 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.52 (.060) 1.15 (.045) 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 -B- NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) I-Pak (TO-251AA) Part Marking Information 8 www.irf.com IRFR/U3704 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.5 mH RG = 25Ω, IAS = 28.4 A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A … Rθ is measured at TJ approximately 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/