IRFR3706CTRLPBF

PD - 96065 IRFR3706CPbF IRFU3706CPbF SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET l VDSS RDS(on) max ID 20V 9.0mΩ 75A„ Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current D-Pak IRFR3706CPbF I-Pak IRFU3706CPbF Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 12 75 „ 53 „ 280 88 44 0.59 -55 to + 175 V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case… Junction-to-Ambient (PCB mount)*… Junction-to-Ambient… Typ. Max. Units ––– ––– ––– 1.7 50 110 °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through … are on page 10 www.irf.com 1 06/02/06 IRFR/U3706CPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.021 6.9 8.1 11.5 ––– ––– ––– ––– ––– Max. Units ––– V ––– V/°C 9.0 11 mΩ 23 2.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 1mA VGS = 10V, ID = 15A ƒ VGS = 4.5V, ID = 12A ƒ VGS = 2.8V, ID = 7.5A ƒ VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 53 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 23 8.0 5.5 16 1.8 6.8 87 17 4.8 2410 1070 140 Max. Units Conditions ––– S VDS = 16V, ID = 57A 35 ID = 28A 12 nC VDS = 10V 8.3 VGS = 4.5V ƒ 24 VGS = 0V, VDS = 10V ––– Ω ––– VDD = 10V ns ––– ID = 28A ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– pF VDS = 10V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 220 28 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 75 „ ––– ––– 280 ––– ––– ––– ––– ––– ––– 0.88 0.82 45 65 49 78 1.3 ––– 68 98 74 120 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 36A, VGS = 0V ƒ TJ = 125°C, I S = 36A, VGS = 0V ƒ TJ = 25°C, I F = 36A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 36A, VR=20V di/dt = 100A/µs ƒ www.irf.com IRFR/U3706CPbF 1000 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 2.5V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 100 2.5V 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 100 V DS = 15V 20µs PULSE WIDTH 4.5 5.5 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 3.5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 20µs PULSE WIDTH TJ = 175 °C 10 0.1 100 VDS , Drain-to-Source Voltage (V) 10 2.5 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 6.5 ID = 71A 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3706CPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 VGS , Gate-to-Source Voltage (V) 10 100000 10 ID = 28A VDS = 16V VDS = 10V 8 6 4 2 0 1 10 0 100 10 VDS, Drain-to-Source Voltage (V) 1000 ISD , Reverse Drain Current (A) 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us I D , Drain Current (A) 100 TJ = 175 ° C 10 TJ = 25 ° C 100 100us 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) 1.8 TC = 25 ° C TJ = 175° C Single Pulse 1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3706CPbF 80 V DS LIMITED BY PACKAGE ID , Drain Current (A) VGS D.U.T. RG 60 RD + -VDD 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) IRFR/U3706CPbF 500 TOP 400 BOTTOM ID 12A 24A 28A 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U3706CPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U3706CPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information (;$03/( 7+,6,6$1,5)5 3$57180%(5 :,7+$66(0%/< ,17(51$7,21$/ /27&2'( ,5)5 $   5(&7,),(5 $66(0%/('21:: /2*2 ,17+($66(0%/