IRFS7530TRL7PP

StrongIRFET™ IRFS7530-7PPbF HEXFET® Power MOSFET Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches   VDSS 60V RDS(on) typ. 1.15m max 1.4m D G S ID (Silicon Limited) 338A ID (Package Limited) 240A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate Package Type IRFS7530-7PPbF D2Pak-7PIN Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 6 5 300 4 250 3 TJ = 125°C 2 1 TJ = 25°C Complete Part Number IRFS7530-7PPbF IRFS7530TRL7PP Limited By Package 200 150 100 50 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 S Source 350 ID = 100A ID, Drain Current (A) ( ) RDS(on), Drain-to -Source On Resistance m Base Part Number D Drain www.irf.com © 2015 International Rectifier 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Typ. Max. ––– ––– 33 ––– 1.15 1.4 1.4 ––– ––– 3.7 ––– 1.0 ––– 150 ––– 100 ––– -100 2.2 ––– A W W/°C V °C   300 526 1029 mJ See Fig 14, 15, 23a, 23b A mJ Typ. ––– ––– Min. 60 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Units -55 to + 175   Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  Repetitive Avalanche Energy  EAR Thermal Resistance   Symbol Parameter Junction-to-Case  RJC Junction-to-Ambient  RJA RG Max. 338 239 240 1450 375 2.5 ± 20 Units V mV/°C m m V µA nA Max. 0.40 40 Units °C/W    Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA  VGS = 10V, ID = 100A  VGS = 6.0V, ID = 50A  VDS = VGS, ID = 250µA VDS = 60 V, VGS = 0V VDS = 60V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V  Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 105µH, RG = 50, IAS = 100A, VGS =10V. ISD  100A, di/dt  1575A/µs, VDD  V(BR)DSS, TJ 175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Min. 249 ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– S VDS = 10V, ID =100A 236 354 ID = 100A 62 ––– VDS = 30V nC   73 ––– VGS = 10V 163 ––– 24 ––– VDD = 30V ID = 100A 102 ––– ns 168 ––– RG= 2.7 VGS = 10V 79 ––– td(off) Turn-Off Delay Time ––– tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– 12960 ––– ––– 1270 ––– ––– 760 ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1248 ––– VGS = 0V, VDS = 0V to 48V Coss eff.(TR) Output Capacitance (Time Related) ––– 1590 ––– VGS = 0V, VDS = 0V to 48V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 338 ––– ––– 1450 VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 8.5 48 50 72 83 2.5 ––– ––– ––– ––– ––– ––– VGS = 0V VDS = 25V pF   ƒ = 1.0MHz Diode Characteristics   Symbol IS ISM 3 www.irf.com © 2015 International Rectifier A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 100A,VGS = 0V  V/ns TJ = 175°C,IS =100A,VDS = 60V TJ = 25°C VDD = 51V ns TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   10000 10000 1000 BOTTOM 100 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 1000 BOTTOM 100 4.5V  60µs PULSE WIDTH Tj = 175°C  60µs PULSE WIDTH Tj = 25°C 1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 TJ = 175°C 100 TJ = 25°C 10 1 VDS = 25V  60µs PULSE WIDTH 0.1 2.0 4.0 6.0 ID = 100A VGS = 10V 2.0 1.5 1.0 0.5 8.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 1000000 Ciss 10000 Coss 1000 Fig 6. Normalized On-Resistance vs. Temperature VGS, Gate-to-Source Voltage (V) = C gd C oss = C ds + C gd 100000 20 40 60 80 100 120 140 160 180 14 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss 0 TJ , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics C, Capacitance (pF) 100 2.5 10000 Crss ID= 100A 12 VDS= 48V VDS= 30V VDS= 12V 10 8 6 4 2 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. 4 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) www.irf.com © 2015 International Rectifier 0 50 100 150 200 250 300 QG Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10000 1000 TJ = 175°C 100 TJ = 25°C 10 1 1000 100µsec 100 Package 10 OPERATION IN THIS AREA LIMITED BY R (on) DS 1 0.1 10msec Tc = 25°C Tj = 175°C Single Pulse VGS = 0V DC 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-toSource Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 80 2.0 Id = 1.0mA 1.5 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 1msec Limited by 70 1.0 0.5 0.0 60 0 -60 -40 -20 0 20 40 60 80 100120140160180 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Fig 12. Typical Coss Stored Energy Fig 11. Drain-to-Source Breakdown Voltage ( ) RDS(on), Drain-to -Source On Resistance m 10 2.2 VGS = 5.5V 2.0 VGS = 6.0V 1.8 VGS = 8.0V VGS = 7.0V VGS = 10V 1.6 1.4 1.2 1.0 0 50 100 150 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   Thermal Response ( ZthJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  Tj = 150°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. (Single Pulse) 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAS, Single Pulse Avalanche Energy (mJ) 2400 ID TOP 21A 44A BOTTOM 100A 2000 1600 1200 800 400 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   16 IF = 60A VR = 51V 3.5 TJ = 25°C TJ = 125°C 12 3.0 IRRM (A) VGS(th) Gate threshold Voltage (V) 4.0 ID = 250µA ID = 1.0mA 2.5 8 ID = 1.0A 2.0 4 1.5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 500 16 IF = 100A VR = 51V IF = 60A VR = 51V 400 TJ = 25°C TJ = 125°C QRR (nC) 12 IRRM (A) 400 8 4 TJ = 25°C TJ = 125°C 300 200 100 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 500 IF = 100A VR = 51V QRR (nC) 400 TJ = 25°C TJ = 125°C 300 200 100 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   D2Pak-7Pin Part Marking Information D2Pak-7Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015 IRFS7530-7PPbF   Qualification Information†   Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D††) Yes D2Pak-7Pin RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 03/05/2015 Comment Updated EAS (L =1mH) = 1029mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V” on page 2  Updated package outline on page 9 . IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 5, 2015