StrongIRFET
IRFS7437PbF
IRFSL7437PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
HEXFET® Power MOSFET
D
G
S
IRFSL7437PbF
IRFS7437PbF
IRFS7437PbF
TO-262
D2Pak
D2Pak
195A
D
S
G
D
S
TO-262
IRFSL7437PbF
D2Pak
IRFS7437PbF
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tube
Tape and Reel Left
6
Orderable Part Number
Quantity
50
50
800
IRFSL7437PbF
IRFS7437PbF
IRFS7437TRLPbF
250
LIMITED BY PACKAGE
ID = 100A
5
200
4
3
TJ = 125°C
2
TJ = 25°C
1
150
100
50
0
0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
ID (Package Limited)
c
G
ID , Drain Current (A)
( Ω)
RDS (on), Drain-to -Source On Resistance m
Package Type
40V
1.4mΩ
1.8mΩ
250A
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
Base Part Number
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
www.irf.com © 2015 International Rectifier
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFS7437PbF/IRFSL7437PbF
Absolute Maximum Ratings
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
250
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
180
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
IDM
Pulsed Drain Current
1000
PD @TC = 25°C
Maximum Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery
3.0
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Symbol
Parameter
d
f
°C
x
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Symbol
e
k
RθJC
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
mJ
802
A
See Fig. 14, 15, 22a, 22b
mJ
Parameter
j
x
350
d
Junction-to-Case
300
10lbf in (1.1N m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
A
-55 to + 175
Soldering Temperature, for 10 seconds (1.6mm from case)
d
Units
c
j
Typ.
Max.
–––
0.65
–––
40
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.4
1.8
–––
2.0
–––
2.2
3.0
3.9
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Internal Gate Resistance
–––
2.2
–––
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH
RG = 50Ω, IAS = 100A, VGS =10V.
ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
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Conditions
Units
mΩ
VGS = 0V, ID = 250μA
d
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
V
VDS = VGS, ID = 150μA
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Ω
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
Rθ is measured at TJ approximately 90°C.
Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 40A, VGS =10V.
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IRFS7437PbF/IRFSL7437PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Min. Typ. Max. Units
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
i
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
41
51
99
19
70
78
53
7330
1095
745
1310
1735
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V
ID = 100A, VDS =20V, VGS = 10V
VDD = 20V
ID = 30A
R G = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
g
ns
pF
g
Diode Characteristics
Symbol
IS
Parameter
VSD
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
3
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Min. Typ. Max. Units
c
Conditions
MOSFET symbol
showing the
G
––– ––– 1000
A integral reverse
p-n junction diode.
–––
1.0
1.3
V TJ = 25°C, IS = 100A, VGS = 0V
–––
30
–––
ns TJ = 25°C
VR = 34V,
–––
30
–––
TJ = 125°C
IF = 100A
di/dt = 100A/μs
–––
24
–––
nC TJ = 25°C
–––
25
–––
TJ = 125°C
–––
1.3
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
250
A
g
D
S
g
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IRFS7437PbF/IRFSL7437PbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
BOTTOM
100
4.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
1
1
10
100
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
1
VDS, Drain-to-Source Voltage (V)
1000
TJ = 175°C
100
TJ = 25°C
10
VDS = 10V
≤60μs PULSE WIDTH
1.0
3
4
5
6
7
1.2
1.0
0.8
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 6. Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
Coss
Crss
1000
1.4
TJ , Junction Temperature (°C)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
1.6
0.6
Fig 5. Typical Transfer Characteristics
100000
ID = 100A
VGS = 10V
1.8
8
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
Tj = 175°C
10
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID= 100A
12
VDS = 32V
VDS = 20V
10
8
6
4
2
0
100
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
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40
80
120
160
200
QG Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFS7437PbF/IRFSL7437PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
100μsec
100
1msec
Limited by Package
10
10msec
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
2.0
0.1
2.5
VSD , Source-to-Drain Voltage (V)
10
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
1.2
50
Id = 1.0mA
1.0
48
0.8
Energy (μJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
1
VDS, Drain-toSource Voltage (V)
46
44
0.6
0.4
42
0.2
0.0
40
0
-60 -40 -20 0 20 40 60 80 100120140160180
20
30
40
50
VDS, Drain-to-Source Voltage (V)
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
RDS (on) , Drain-to-Source On Resistance (mΩ)
10
Fig 12. Typical COSS Stored Energy
8
VGS = 5.5V
7
VGS = 6.0V
6
5
VGS = 7.0V
VGS = 8.0V
VGS = 10V
4
3
2
1
0
100
200
300
400
500
ID , Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFS7437PbF/IRFSL7437PbF
1
Thermal Response ( ZthJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C. (Single Pulse)
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
EAR , Avalanche Energy (mJ)
350
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 100A
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFS7437PbF/IRFSL7437PbF
10
IF = 60A
VR = 34V
4.0
8
TJ = 25°C
TJ = 125°C
3.5
3.0
IRR (A)
VGS(th), Gate threshold Voltage (V)
4.5
ID = 150μA
2.5
ID = 1.0mA
ID = 1.0A
2.0
6
4
2
1.5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
TJ , Temperature ( °C )
600
800
1000
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
140
10
8
IF = 100A
VR = 34V
120
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
100
TJ = 25°C
TJ = 125°C
6
QRR (nC)
IRR (A)
400
diF /dt (A/μs)
4
80
60
40
2
20
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
Fig. 19 - Typical Recovery Current vs. dif/dt
QRR (nC)
140
120
IF = 100A
VR = 34V
100
TJ = 25°C
TJ = 125°C
80
60
40
20
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
7
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IRFS7437PbF/IRFSL7437PbF
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 23a. Unclamped Inductive Test Circuit
RD
VDS
Fig 23b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 24a. Switching Time Test Circuit
tr
t d(off)
Fig 24b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 25a. Gate Charge Test Circuit
8
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Qgs1 Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFS7437PbF/IRFSL7437PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFS7437
PYWW?
LC
LC
OR
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFS7437
YWWP
LC
LC
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRFS7437PbF/IRFSL7437PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
IRFSL7437
PYWW?
ASSEMBLY
LOT CODE
LC
LC
PART NUMBER
OR
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
IRFSL7437
YWWP
ASSEMBLY
LOT CODE
LC
LC
PART NUMBER
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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IRFS7437PbF/IRFSL7437PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11
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IRFS7437PbF/IRFSL7437PbF
†
Qualification information
††
Industrial
Qualification level
†††
(per JEDEC JESD47F
Moisture Sensitivity Level
D2Pak
guidelines)
MS L1
†††
(per JEDE C J-S T D-020D
TO-262
)
Yes
RoHS compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
4/30/2014
1/6/2015
Comment
• Updated data sheet based on corporate template.
• Updated typo on the fig.19 and fig.21, unit of y-axis from "A" to "nC" on page7.
• Updated package outline and part marking on page 9 & 10.
• Updated EAS (L =1mH) = 802mJ on page 2
• Updated note 9 “Limited by TJmax , starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 40A, VGS =10V”. on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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