IRFTS8342TRPBF

PD - 97728A IRFTS8342PbF RDS(on) max 19 m 29 m 4.8 nC 8.2 A (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 6  V '  ±20 '  VGS HEXFET® Power MOSFET  * V  ' 30  ' VDS TSOP-6 Applications System/Load Switch Features and Benefits Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFTS8342TRPBF TSOP-6 Absolute Maximum Ratings Parameter  Resulting Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 3000 Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ±20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 8.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 6.6 IDM Pulsed Drain Current c PD @TA = 70°C e Power Dissipation e TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range PD @TA = 25°C Power Dissipation Note Units V A 80 2.0 1.3 0.02 -55 to + 150 W W/°C °C Notes  through „ are on page 2 www.irf.com 1 02/23/12 IRFTS8342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Min. Typ. Max. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 30 ––– ––– 18 ––– ––– Static Drain-to-Source On-Resistance ––– ––– 15 22 19 29 VGS = 0V, ID = 250μA V mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.2A m VGS = 4.5V, ID = 6.6A d d VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V VGS(th) IDSS Gate Threshold Voltage Coefficient ––– -5.7 ––– mV/°C Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– ––– ––– 1.0 150 100 Gate-to-Source Reverse Leakage Forward Transconductance ––– 12 ––– ––– -100 ––– Total Gate Charge Gate-to-Source Charge ––– ––– 4.8 2.1 ––– ––– Qgd RG Gate-to-Drain Charge Gate Resistance ––– ––– 1.6 2.6 ––– ––– td(on) tr td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time ––– ––– ––– 7.3 15 9.1 ––– ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 8.2 560 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 102 48 ––– ––– pF Min. Typ. Max. Units gfs Qg Qgs Conditions Units μA nA VDS = VGS, ID = 25μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V S VGS = -20V VDS = 10V, ID = 6.6A nC VGS = 4.5V VDS = 15V ID = 6.6A  ns VDD = 15V, VGS = 4.5V ID = 6.6.A e RG = 6.8 VGS = 0V VDS = 25V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ––– ––– 2.5 ISM Pulsed Source Current (Body Diode) ––– ––– 80 c A Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C, IS = 6.6A, VGS = 0V d VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 8.2 12 ns TJ = 25°C, IF = 6.6A, VDD = 24V Qrr Reverse Recovery Charge ––– 4.5 5.4 nC di/dt = 100/μs Thermal Resistance Parameter RJA Junction-to-Ambient e d Typ. Max. Units ––– 62.5 °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width  400μs; duty cycle  2%. ƒ When mounted on 1 ich square copper board. 2 www.irf.com IRFTS8342PbF 100 100 VGS 10V 8.0V 7.0V 4.5V 3.5V 3.0V 2.75V 2.5V 10 BOTTOM VGS 10V 8.0V 7.0V 4.5V 3.5V 3.0V 2.75V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1 2.5V 0.1 BOTTOM 10 2.5V 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 150°C Tj = 25°C 1 0.01 0.01 0.1 1 10 0.1 100 100 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics T J = 150°C 10 T J = 25°C VDS = 15V 60μs PULSE WIDTH 1.0 ID = 8.2A VGS = 10V 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 6.6A C oss = C ds + C gd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Crss 10 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 2 4 6 8 10 12 14 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFTS8342PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 150°C 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100μsec 1msec 10 10msec 1 0.1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 1.6 0.1 1 10 100 VDS, Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 10 VGS(th) , Gate threshold Voltage (V) 2.2 8 ID, Drain Current (A) DC 6 4 2 0 2.0 1.8 1.6 ID = 25μA 1.4 ID = 250μA ID = 1.0mA 1.2 1.0 0.8 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 40 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) IRFTS8342PbF ID = 8.2A 35 30 25 T J = 125°C 20 15 T J = 25°C 10 0 5 10 15 90 80 70 Vgs = 4.5V 60 50 40 Vgs = 10V 30 20 10 20 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 1000 100 ID TOP 0.96A 1.5A BOTTOM 6.6A 90 80 70 800 Single Pulse Power (W) EAS , Single Pulse Avalanche Energy (mJ) 100 60 50 40 30 20 600 400 200 10 0 25 50 75 100 125 0 1E-6 150 1E-5 1E-4 Starting T J , Junction Temperature (°C) Driver Gate Drive + ‚ - P.W. + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period D.U.T. ISD Waveform Reverse Recovery Current V DD D= Period *  RG 1E+0 VGS=10V Circuit Layout Considerations  Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer „ - 1E-1 Fig 15. Typical Power vs. Time + ƒ 1E-2 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T 1E-3 + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple  5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 5 IRFTS8342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 tp Fig 18a. Unclamped Inductive Test Circuit V DS V GS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width µs Duty Factor  Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 19b. Switching Time Waveforms www.irf.com IRFTS8342PbF TSOP-6 Package Outline TSOP-6 Part Marking Information