IRFZ48VSPBF

PD - 95573 IRFZ48VSPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET® Power MOSFET l D VDSS = 60V RDS(on) = 12mΩ G ID = 72A S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 72 51 290 150 1.0 ± 20 166 72 15 5.3 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units ––– 0.50 ––– 1.0 ––– 62 °C/W 1 07/19/04 IRFZ48VSPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 ––– ––– 2.0 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.064 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.6 200 157 166 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 1985 496 91 V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12.0 mΩ VGS = 10V, ID = 43A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 43A„ 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 72A 29 nC VDS = 48V 36 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 72A ns ––– RG = 9.1Ω ––– RD = 0.34Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 72 ––– ––– showing the A G integral reverse ––– ––– 290 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V „ ––– 70 100 ns TJ = 25°C, IF = 72A ––– 155 233 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 64µH ƒ ISD ≤ 72A, di/dt ≤ 151A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, I AS = 72A. (See Figure 12) 2 www.irf.com IRFZ48VSPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 ° C TJ = 175° C 10 V DS= 25V 20µs PULSE WIDTH 4 6 8 10 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20µs PULSE WIDTH TJ = 175 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 14 3.0 ID = 72A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFZ48VSPbF 20 VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 4000 Crss = Cgd Coss = Cds + Cgd 3000 Ciss 2000 1000 Coss ID = 72A V DS= 48V V DS= 30V V DS= 12V 15 10 5 Crss 0 0 1 10 100 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 175 ° C ID , Drain Current (A) ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10us 100 TJ = 25 ° C 10 100us 1ms 10 1 0.1 0.2 10ms V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 1 1.8 TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFZ48VSPbF VGS D.U.T. RG ID , Drain Current (A) RD V DS 80 + V DD 60 - 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ48VSPbF 400 ID 29A 51A BOTTOM 72A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFZ48VSPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ48VSPbF D2Pak Package Outline D2Pak Part Marking Information T H IS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB LY L INE "L " INT E R NAT IONAL R E CT IF IE R L OGO Note: "P" in as s embly line pos ition indicates "L ead-F ree" PAR T NUMB E R F 530S AS S E MB L Y LOT CODE DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL R E CT IF IE R LOGO AS S E MBL Y L OT CODE 8 P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E CODE www.irf.com IRFZ48VSPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/