PD - 9.692
IRGPC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard Speed IGBT
C
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to
400Hz)
See Fig. 1 for Current vs. Frequency
curve
VCES = 600V
VCE(sat) ≤ 1.8V
G
@VGE = 15V, IC = 31A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
TO -2 4 7 AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
I CM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
50
31
240
240
±20
15
160
65
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
---------------------
-----0.24
-----6 (0.21)
0.77
-----40
------
Units
°C/W
g (oz)
IRGPC40S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
Emitter-to-Collector Breakdown Voltage 20
∆V(BR)CES /∆T J Temperature Coeff. of Breakdown Voltage---VCE(on)
Collector-to-Emitter Saturation Voltage
---------VGE(th)
Gate Threshold Voltage
3.0
∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe
Forward Transconductance
12
Zero Gate Voltage Collector Current
---ICES
---IGES
Gate-to-Emitter Leakage Current
---V(BR)CES
V(BR)ECS
Typ.
------0.75
1.6
2.2
1.7
----9.3
21
----------
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---V
VGE = 0V, IC = 1.0A
---- V/°C VGE = 0V, IC = 1.0mA
1.8
IC = 31A
VGE = 15V
See Fig. 2, 5
---V
IC = 60A
---IC = 31A, TJ = 150°C
5.5
VCE = VGE, IC = 250µA
---- mV/°C VCE = VGE, IC = 250µA
---S
VCE = 100V, IC = 31A
250
µA
VGE = 0V, VCE = 600V
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Q gc
t d(on)
tr
t d(off)
tf
Eon
Eoff
Ets
t d(on)
tr
t d(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----------------------------------------------------------
Typ.
62
10
27
28
50
1100
620
1.0
12
13
29
53
1600
1200
22
7.5
1600
140
20
Max. Units
Conditions
90
IC = 31A
15
nC
VCC = 400V
See Fig. 8
40
VGE = 15V
---TJ = 25°C
---ns
IC = 31A, VCC = 480V
1500
VGE = 15V, RG = 10Ω
1100
Energy losses include "tail"
------mJ
See Fig. 9, 10, 11, 14
20
---TJ = 150°C,
---ns
IC = 31A, VCC = 480V
---VGE = 15V, RG = 10Ω
---Energy losses include "tail"
---mJ
See Fig. 10, 14
---nH Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
---ƒ = 1.0MHz
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
IRGPC40S
80
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
LOAD CURRENT (A)
60
Triangular wave:
Clamp voltage:
80% of rated
Square wave:
40
60% of rated
voltage
20
Ideal diodes
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK )
1000
IC , Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
1000
TJ = 25°C
100
TJ = 150°C
10
1
0.1
VGE = 15V
20µs PULSE WIDTH
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
100
10
VCC = 100V
5µs PULSE WIDTH
1
5
10
15
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20
IRGPC40S
3.0
VGE = 15V
LIMITED BY PACKAGE
60
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
70
50
40
30
20
10
50
75
100
125
I C = 62A
2.5
2.0
I C = 31A
1.5
I C = 16A
1.0
-60 -40 -20
0
25
VGE = 15V
80µs PULSE WIDTH
150
0
20
40
60
80 100 120 140 160
TC , Case Temperature (°C)
T C , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Thermal Response (Z thJC)
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
0.02
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
0.01
0.01
0.00001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRGPC40S
3000
20
VGE, Gate-to-Emitter Voltage (V)
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = C ce + C gc
C, Capacitance (pF)
Cies
2000
Coes
1000
Cres
0
16
12
8
4
0
1
10
100
0
V CE , Collector-to-Emitter Voltage (V)
VCC
VGE
TC
IC
14.4
20
30
40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
= 480V
= 15V
= 25°C
= 31A
Total Switching Losses (mJ)
14.6
10
Q g , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
VCE = 400V
I C = 31A
14.2
14.0
13.8
13.6
RG = 10 Ω
V GE = 15V
V CC = 480V
I C = 62A
I C = 31A
I C = 16A
10
13.4
1
-60 -40 -20
13.2
0
10
20
30
40
50
60
R G , Gate Resistance (Ω )
0
20
40
60
80 100 120 140 160
TC , Case Temperature (°C)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
IRGPC40S
1000
RG = 10 Ω
T C = 150°C
VCC = 480V
40 VGE = 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
50
30
20
10
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
0
1
0
10
20
30
40
50
60
70
1
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
-B-
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
-D-
5.30 ( .209)
4.70 ( .185)
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
4.50 (.177)
-C-
*
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
1.40 (.056)
3X
1.00 (.039)
0.25 ( .010) M
3.40 (.133)
3.00 (.118)
NO TES:
1 DIMENSIO NS & T OLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIO NS ARE SHOW N
MILLIMETE RS (INCHES).
4 CONFO RM S TO JEDEC OUTLINE
T O-247AC.
LEAD ASSIGNMENT S
1 - GAT E
2 - CO LLECTO R
3 - EMIT TER
4 - CO LLECTO R
3
14.80 (.583)
14.20 (.559)
100
Fig. 12 - Turn-Off SOA
3.65 (.143)
3.55 (.140)
0.25 (.010) M D B M
15.90 ( .626)
15.30 ( .602)
10
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-Emitter Current (A)
NGE R LEADED (20m m)
* LO
VERS ION AVAILAB LE (TO-247AD)
C A
S
0.80 ( .031)
3X 0.40 ( .016)
2.60 (.102)
2.20 (.087)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
TO ORDE R ADD "-E " SUFF IX
TO PART NUMBER
1000
IRGPC40S
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
480V
4 X IC@25°C
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Fig. 14a - Switching
Loss Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC =
480V
90%
VC
10%
Fig. 14b - Switching Loss
Waveforms
90%
t d(off)
10%
I C 5%
tf
tr
t d(on)
t=5µs
Eon
Eoff
Ets = (Eon +Eoff )
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/