IRGPC40U

PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V G @VGE = 15V, I C = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 40 20 160 160 ±20 15 160 65 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-681 Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.77 — 40 — Units °C/W g (oz) Revision 0 IRGPC40U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.63 — V/°C VGE = 0V, I C = 1.0mA — 2.2 3.0 IC = 20A V GE = 15V — 2.7 — V IC = 40A See Fig. 2, 5 — 2.3 — IC = 20A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -13 — mV/°C VCE = VGE, IC = 250µA 11 18 — S VCE = 100V, I C = 20A — — 250 µA VGE = 0V, V CE = 600V — — 2500 VGE = 0V, V CE = 600V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 51 67 IC = 20A 8.9 11 nC VCC = 400V See Fig. 8 20 33 VGE = 15V 25 — TJ = 25°C 21 — ns IC = 20A, V CC = 480V 96 190 VGE = 15V, R G = 10Ω 43 120 Energy losses include "tail" 0.34 — 0.41 — mJ See Fig. 9, 10, 11, 14 0.75 1.6 25 — TJ = 150°C, 23 — ns IC = 20A, V CC = 480V 174 — VGE = 15V, R G = 10Ω 140 — Energy losses include "tail" 1.4 — mJ See Fig. 10, 14 13 — nH Measured 5mm from package 1500 — VGE = 0V 190 — pF VCC = 30V See Fig. 7 17 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-682 Pulse width 5.0µs, single shot. IRGPC40U 50 F o r b o th : 40 L O A D C U R R E N T (A ) T ria n g u la r w a v e : D uty c y cle: 50% TJ = 125°C T sink = 90° C G ate driv e as spe c ified P o w e r D is s ip a tio n = 3 5 W C la m p v o lta g e : 8 0 % o f ra te d 30 S quare w av e: 6 0 % o f ra te d vo lta g e 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 IC , C ollecto r-to -E m itter C u rrent (A ) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 25 °C 100 T J = 1 50 °C 10 V G E = 1 5V 2 0µ s P U LS E W IDTH 1 1 100 TJ = 1 50 °C TJ = 2 5°C 10 1 V C C = 1 00 V 5 µ s P UL S E W IDTH 0.1 10 5 V C E , C ollector-to-E m itter V oltage (V ) 10 15 V G E , G ate -to-E m itter V olta ge (V ) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-683 20 IRGPC40U 3.5 VGE = 15V V C E , C olle ctor-to-E m itte r V oltag e (V ) Maximum DC Collector Current (A) 40 30 20 10 A 0 25 50 75 100 125 V G E = 1 5V 8 0µ s P U LS E W ID TH I C = 4 0A 3.0 2.5 I C = 2 0A 2.0 I C = 10 A 1.5 150 -60 TC , Case Temperature (°C) -40 -20 0 20 40 60 80 100 120 1 40 160 T C , C as e T em pe ra ture (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z th JC ) 1 D = 0 .5 0 0.2 0 0.1 0.1 0 PD M 0 .05 0.0 2 t t2 N o te s: 1 . D u ty fa c to r D = t 0.0 1 0.01 0.00001 1 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) 1 / t 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-684 10 IRGPC40U 3 0 00 VG E , G ate-to-E m itter V o ltag e (V ) 2 5 00 C , C ap ac ita nc e (pF ) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 4 00 V I C = 2 0A 16 Cies 2 0 00 12 Coes 1 5 00 1 0 00 Cres 5 00 0 8 4 0 1 10 10 0 0 10 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1.8 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 48 0V = 1 5V = 25 °C = 20 A To ta l S w itc hing Lo ss es (m J) T o ta l S w itc h in g L o s s e s (m J) 1.9 20 Q g , Total G ate C harge (nC ) 1.7 1.6 1.5 1.4 R G = 10 Ω V GE = 1 5V V CC = 48 0V I C = 4 0A I C = 2 0A I C = 10 A 1 0.1 0 10 20 30 40 50 60 -60 R G , G a te R e s is ta n c e ( Ω ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 10 - Typical Switching Losses vs. Case Temperature C-685 IRGPC40U RG TC V CC VGE 5.0 1000 = 10 Ω = 150 °C = 4 80 V = 15 V I C , C ollec tor-to -E m itter C u rre nt (A ) Total Sw itching Losses (m J) 6.0 4.0 3.0 2.0 1.0 0.0 VGGE E= 20 V T J = 12 5°C 100 S A FE O P E R A TIN G A R E A 10 1 0 10 20 30 40 50 1 I C , C o llector-to -E m itte r Current (A ) 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC C-686 Section D - page D-13 1000 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/