SMPS MOSFET
IRL3713SPbF
HEXFET® Power MOSFET
Applications
VDSS
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for Computer
Processor Power
l 100% RG Tested
l
30V
RDS(on) max (mW)
ID
3.0@VGS = 10V
260A
Benefits
Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l
Base Part Number
TO-220AB
IRL3713PbF
Standard Pack
Form
Package Type
IRL3713PbF
IRL3713SLPbF
TO-220
TO-262
IRL3713SPbF
D Pak
Tube
Tube
Tube
2
D2 Pak
IRL3713SPbF
Quantity
Orderable Part Number
50
50
50
Tape and Reel Left
Tape and Reel Right
TO-262
IRL3713LPbF
IRL3713PbF
IRL3713SLPbF
IRL3713SPbF
800
800
IRL3713STRLPbF
IRL3713STRRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
30
V
VGS
± 20
260
V
180
A
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
330
PD @Tc = 100°C
Maximum Power Dissipation
170
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
h
h
1040h
c
W
2.2
-55 to +175
W/°C
°C
Thermal Resistance
Symbol
Parameter
i
RθJC
Junction-to-Case
RqCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount)
fi
f
gi
Typ
Max
–––
0.45*
0.50
–––
–––
62
–––
40
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
1
through are on page 11
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Min
Typ
Max Units
V(BR)DSS
Symbol
Drain-to-Source Breakdown Voltage
Parameter
30
–––
–––
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.027
–––
–––
2.6
3.0
–––
3.3
4.0
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
V
V/°C Reference to 25°C, ID = 1mA
mΩ
1.0
–––
2.5
–––
–––
50
–––
–––
20
–––
–––
100
Conditions
VGS = 0V, ID = 250μA
V
VGS = 10V, ID = 38A
VGS = 4.5V, ID = 30A
e
e
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
μA
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Min
Typ
Max Units
76
–––
–––
Conditions
gfs
Qg
S
VDS = 15V, ID = 30A
Total Gate Charge
–––
75
110
Qgs
Gate-to-Source Charge
–––
24
–––
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
37
–––
VGS = 4.5V
QOSS
Output Gate Charge
61
92
VGS = 0V, VDS = 15V
RG
Gate Resistance
0.5
–––
3.4
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
160
–––
td(off)
Turn-Off Delay Time
–––
40
–––
tf
Fall Time
–––
57
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
5890
–––
VGS = 0V
Coss
Output Capacitance
–––
3130
–––
Crss
Reverse Transfer Capacitance
–––
630
–––
ID = 30A
f
Ω
VDD = 15V
ns
pF
ID = 30A
RG = 1.8Ω
e
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
Parameter
Single Pulse Avalanche Energy
Typ
Max
Units
EAS
–––
1530
mJ
IAR
Avalanche Current
–––
46
A
c
d
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
ch
Min
Typ
Max Units
–––
–––
260
h
–––
––– 1040
h
–––
0.80
1.3
–––
0.68
–––
A
Diode Forward Voltage
trr
Reverse Recovery Time
–––
75
110
ns
Qrr
Reverse Recovery Charge
–––
140
210
nC
trr
Reverse Recovery Time
–––
78
120
ns
Qrr
Reverse Recovery Charge
–––
160
240
nC
www.irf.com © 2013 International Rectifier
showing the
integral reverse
VSD
2
Conditions
MOSFET symbol
V
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
e
e
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VR = 0V
di/dt = 100A/μs
e
TJ = 125°C, IF = 30A, VR = 20V
di/dt = 100A/μs
e
June 21, 2013
IRL3713/S/LPbF
1000
1000
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
100
100
10
1
2.5V
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 175 ° C
TJ = 25 ° C
V DS = 15V
20μs PULSE WIDTH
3.5
4.0
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
100
Fig 2. Typical Output Characteristics
2.0
3.0
1
VDS , Drain-to-Source Voltage (V)
1000
1
2.5
20μs PULSE WIDTH
TJ = 175 °C
1
0.1
100
Fig 1. Typical Output Characteristics
10
2.5V
10
VDS , Drain-to-Source Voltage (V)
100
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
www.irf.com © 2013 International Rectifier
ID = 260A
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
June 21, 2013
IRL3713/S/LPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
VGS , Gate-to-Source Voltage (V)
14
100000
100
10
10
8
6
4
2
100
0
40
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
120
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
80
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1.4
1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 24V
VDS = 15V
VDS = 6V
12
0
1
ID = 30A
www.irf.com © 2013 International Rectifier
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
1msec
100
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
June 21, 2013
100
IRL3713/S/LPbF
300
V DS
LIMITED BY PACKAGE
VGS
250
D.U.T.
RG
I D , Drain Current (A)
RD
+
-VDD
200
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
150
Fig 10a. Switching Time Test Circuit
100
VDS
50
0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
EAS , Single Pulse Avalanche Energy (mJ)
3000
15V
TOP
2500
DRIVER
L
VDS
BOTTOM
ID
30A
38A
46A
2000
D.U.T
RG
20V
VGS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1500
1000
500
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
QGS
.2μF
.3μF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com © 2013 International Rectifier
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
June 21, 2013
175
IRL3713/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
7
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T HE AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
PAR T NU MB E R
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IR F 530S WIT H
L OT CODE 8024
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB LY L INE "L"
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS S E MB L Y
L OT CODE
PART NU MB E R
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
L INE L
OR
INT E RNAT IONAL
RE CT IF IE R
LOGO
PART NU MB E R
F 530S
AS S E MB L Y
L OT CODE
DAT E CODE
P = DE S IGNAT E S LE AD - F RE E
PRODU CT (OPT IONAL)
YE AR 0 = 2000
WE E K 02
A = AS S E MB LY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPL E: T HIS IS AN IR L 3103L
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T HE AS S E MB L Y L INE "C"
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
INT E R NAT IONAL
R E CT IF IER
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
OR
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PR ODU CT (OPT IONAL )
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.4mH, RG = 25Ω, IAS = 46A,VGS=10V.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is only applied to TO-220A package.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint
and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Rθ is measured at TJ approximately 90°C.
11
www.irf.com © 2013 International Rectifier
June 21, 2013
IRL3713/S/LPbF
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
TO-220 PAK
TO-262 PAK
D2-PAK
RoHS compliant
††
guidelines)
N/A
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
6/17/2013
Comments
•Updated ds with New IR Corporate Template
• Updated Fig8-SOA curve with Spirito effect on page 4
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
www.irf.com © 2013 International Rectifier
June 21, 2013
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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