IRLB3813PBF

PD - 97407 IRLB3813PbF HEXFET® Power MOSFET Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Power Tools l Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free VDSS RDS(on) max Qg (typ.) 30V 1.95mΩ@VGS = 10V 57nC D G D S TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TC = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 260 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 190 IDM Pulsed Drain Current 1050 c PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor TJ TSTG Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw V h h g g Operating Junction and Storage Temperature Range Units A 230 W 120 1.6 W/°C -55 to + 175 300 (1.6mm from case) 10lb in (1.1N m) x °C x Thermal Resistance Typ. Max. ––– 0.64 Case-to-Sink, Flat Greased Surface 0.50 ––– Junction-to-Ambient ––– 62 RθJC Junction-to-Case RθCS RθJA Parameter g f Units °C/W Notes  through † are on page 9 www.irf.com 1 07/03/09 IRLB3813PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ Min. Typ. Max. Units 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 11 1.60 ––– mV/°C Reference to 25°C, ID = 1.0mA mΩ VGS = 10V, ID = 60A 1.95 Gate Threshold Voltage ––– 1.35 2.00 1.90 2.60 2.35 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -7.8 ––– ––– 1.0 IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– 100 100 nA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V Gate-to-Source Reverse Leakage Forward Transconductance ––– 140 ––– ––– -100 ––– S VGS = -20V VDS = 15V, ID = 48A Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 57 16 86 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 6.7 19 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 15 25.7 ––– ––– Qoss RG Output Charge Gate Resistance ––– ––– 35 0.87 ––– 1.3 nC Ω td(on) tr Turn-On Delay Time Rise Time ––– ––– 36 170 ––– ––– ns td(off) tf Turn-Off Delay Time Fall Time ––– ––– 33 60 ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 8420 1620 ––– ––– Crss Reverse Transfer Capacitance ––– 650 ––– RDS(on) VGS(th) ∆VGS(th)/∆TJ gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage V VGS = 0V, ID = 250µA e e VGS = 4.5V, ID = 48A VDS = VGS, ID = 150µA mV/°C µA VDS = 24V, VGS = 0V VDS = 15V nC VGS = 4.5V ID = 48A See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 48A e RG = 1.8Ω pF See Fig. 14 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 520 Units mJ ––– 48 A Diode Characteristics Parameter Min. Typ. Max. Units h IS Continuous Source Current ––– ––– 260 ISM (Body Diode) Pulsed Source Current ––– ––– 1050 VSD trr (Body Diode) Diode Forward Voltage Reverse Recovery Time ––– ––– ––– 24 1.0 36 V ns Qrr Reverse Recovery Charge ––– 22 33 nC 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 48A, VGS = 0V TJ = 25°C, IF = 48A, VDD = 15V di/dt = 244A/µs e e www.irf.com IRLB3813PbF 10000 1000 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V BOTTOM VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 100 100 ≤60µs PULSE WIDTH Tj = 25°C 3.0V ≤60µs PULSE WIDTH 3.0V Tj = 175°C 10 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 T J = 175°C 100 T J = 25°C 10 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 120A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 6 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRLB3813PbF 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 48A C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss 100 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 75 100 125 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 1000 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 50 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 1msec 100 10msec 10 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 25 3.0 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLB3813PbF 3.0 Limited By Package 250 ID, Drain Current (A) VGS(th) , Gate threshold Voltage (V) 300 200 150 100 50 2.5 2.0 1.5 ID = 150µA ID = 1.0mA 1.0 ID = 1.0A 0.5 0.0 0 25 50 75 100 125 150 -75 -50 -25 0 175 25 50 75 100 125 150 175 200 TJ , Temperature ( °C ) T C , Case Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.001 τJ R1 R1 τJ τ1 1E-005 R3 R3 Ri (°C/W) R4 R4 τC τ τ1 τ2 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R2 R2 τ4 τ4 τi (sec) 0.4985 0.004600 0.0022 8.246580 0.0001 6.149340 0.1392 0.000300 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 12 2200 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLB3813PbF ID = 60A 10 8 6 T J = 125°C 4 2 TJ = 25°C 0 ID TOP 17A 27A BOTTOM 48A 2000 1800 1600 1400 1200 1000 800 600 400 200 0 2 4 6 8 10 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V L VDS DRIVER D.U.T RG 20V VGS tp + V - DD IAS A 0.01Ω tp I AS Fig 13b. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + -V DD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 14a. Switching Time Test Circuit 6 Fig 13c. Unclamped Inductive Waveforms 10% VGS td(on) tr t d(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRLB3813PbF D.U.T Driver Gate Drive P.W. + ƒ + - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent - ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds 50KΩ 12V Vgs .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgodr Qgd Qgs2 Qgs1 Current Sampling Resistors Fig 16a. Gate Charge Test Circuit www.irf.com Fig 16b. Gate Charge Waveform 7 IRLB3813PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLB3813PbF TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( ,17(51$7,21$/ $66(0%/('21:: ,17+($66(0%/