IRLML0060TRPbF
HEXFET® Power MOSFET
VDSS
60
V
VGS
±16
V
RDS(on) max
(@ VGS = 10V)
92
m
RDS(on) max
(@ VGS = 4.5V)
116
m
Micro 3™ (SOT-23)
IRLML0060TRPbF
G
Gate
Applications
Load/System Switch
Features
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1
Package Type
IRLML0060TRPbF
Micro 3™ (SOT-23)
Form
Tape and Reel
S
Source
Benefits
Multi-Vendor Compatibility
results in Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Absolute Maximum Ratings
Symbol
D
Drain
Orderable Part Number
Quantity
3000
IRLML0060TRPbF
Max.
Units
VDS
Drain-to-Source Voltage
60
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
2.7
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2.1
11
PD @TA= 25°C
Maximum Power Dissipation
1.25
PD @TA= 70°C
Maximum Power Dissipation
0.80
Linear Derating Factor
0.01
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
± 16
VGS
TJ
TSTG
Thermal Resistance
Symbol
RJA
RJA
1
Parameter
Parameter
Junction-to-Ambient
Junction-to-Ambient (t < 10s)
A
W
mW/°C
-55 to + 150
°C
Typ.
Max.
Units
–––
–––
100
99
°C/W
2016-12-20
IRLML0060TRPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
60
–––
–––
–––
1.0
–––
–––
–––
–––
RG
Internal Gate Resistance
–––
1.6
–––
gfs
Forward Trans conductance
7.6
–––
–––
S
Qg
Total Gate Charge
–––
2.5
–––
Qgs
Gate-to-Source Charge
–––
0.7
–––
Qgd
td(on)
tr
td(off)
tf
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
1.3
5.4
6.3
6.8
4.2
–––
–––
–––
–––
–––
Ciss
Input Capacitance
–––
290
–––
Coss
Output Capacitance
–––
37
–––
Crss
Reverse Transfer Capacitance
–––
21
–––
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.06 ––– V/°C Reference to 25°C, ID = 1mA
98
116
VGS = 4.5V, ID = 2.2A
m
78
92
VGS = 10V, ID = 2.7A
–––
2.5
V VDS = VGS, ID = 25µA
–––
20
VDS = 60V, VGS = 0V
µA
––– 250
VDS = 60V,VGS = 0V,TJ = 125°C
––– 100
VGS = 16V
nA
––– -100
VGS = -16V
VDS = 25V, ID = 2.7A
ID = 2.7A
nC VDS = 30V
ns
VGS = 4.5V
VDD = 30V
ID = 1.0A
RG = 6.8
VGS = 4.5V
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz
Min.
Typ. Max. Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 2.7A,VGS = 0V
ns TJ = 25°C ,VR = 30V, IF = 1.6A
nC di/dt = 100A/µs
–––
–––
1.6
–––
–––
11
–––
–––
–––
–––
14
13
1.3
21
20
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
2
2016-12-20
IRLML0060TRPbF
100
100
ID, Drain-to-Source Current (A)
Tj = 25°C
TOP
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
VGS
10V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
1
0.1
10
BOTTOM
VGS
10V
6.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
60µs PULSE WIDTH
Tj = 150°C
1
2.8V
2.8V
0.1
0.01
0.1
1
10
0.1
100
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
10
T J = 150°C
1
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
0.1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
1
5
ID = 2.7A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-12-20
IRLML0060TRPbF
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 2.7A
C, Capacitance (pF)
C oss = Cds + Cgd
1000
Ciss
Coss
100
Crss
12.0
VDS = 48V
VDS = 30V
10.0
VDS = 12V
8.0
6.0
4.0
2.0
10
0.0
0.1
1
10
100
0
VDS , Drain-to-Source Voltage (V)
3
4
5
6
7
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
10
T J = 150°C
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100µsec
1msec
1
10msec
0.1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.01
0.1
0.2
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
1
1.2
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2016-12-20
IRLML0060TRPbF
3.0
ID, Drain Current (A)
2.5
2.0
1.5
Fig 10a. Switching Time Test Circuit
1.0
0.5
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
2016-12-20
IRLML0060TRPbF
400
ID = 2.7A
300
200
T J = 125°C
100
T J = 25°C
0
3
4
5
6
7
8
9
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14a. Basic Gate Charge Waveform
6
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
10
150
Vgs = 4.5V
125
100
Vgs = 10V
75
50
0
2
4
6
8
10
12
ID, Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 14b. Gate Charge Test Circuit
2016-12-20
IRLML0060TRPbF
100
2.6
80
2.4
ID = 250µA
2.2
Power (W)
VGS(th) , Gate threshold Voltage (V)
2.8
2.0
1.8
ID = 25µA
60
40
1.6
1.4
20
1.2
1.0
0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
7
1
10
100
1000
10000
100000
Time (sec)
Fig 16. Typical Power Vs. Time
2016-12-20
IRLML0060TRPbF
Micro3™ (SOT-23) Package Outline (Dimensions are shown in millimeters (inches))
DIMENSIONS
A 5
6
D
SYMBOL
3
E
6 E1
1
5 B
2
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
0.15 [0.006] M C B A
C
e
0.10 [0.004] C
A1
e1
3X b
0.20 [0.008] M C B A
NOTES:
H 4
L1
Recommended Footprint
c
INCHES
MIN
MAX
MIN
MAX
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
0.035
0.0004
0.035
0.012
0.003
0.110
0.083
0.047
0.037
0.075
0.016
0.021
0.010
0
0.044
0.004
0.040
0.020
0.008
0.120
0.104
0.055
BSC
BSC
0.024
REF
BSC
8
NOTES:
0.972
L2
MILLIMETERS
0.950
0.802
2.742
3X L
7
1.900
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3™ (SOT-23/TO-236AB) Part Marking Information
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
8
2016-12-20
IRLML0060TRPbF
Micro3™Tape & Reel Information (Dimensions are shown in millimeters (inches))
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
9
2016-12-20
IRLML0060TRPbF
Qualification Information
Qualification Level
Micro3™ (SOT-23)
Moisture Sensitivity Level
RoHS Compliant
†
Consumer
(per JEDEC JESD47F) †
MSL1
(per JEDEC J-STD-020D) †
Yes
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
12/20/16
Comments
Changed datasheet with Infineon logo - all pages.
Removed typo “Industrial” on Feature and Benefits Table on page1.
Corrected typo for Igss test condition from “VGS = 20V” to “VGS = 16V” on page 2.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this
document is subject to customer’s compliance
with its obligations stated in this document and
any applicable legal requirements, norms and
standards concerning customer’s products and
any use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
10
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
2016-12-20
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