IRLR8256PBF

PD - 96208A Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use IRLR8256PbF IRLU8256PbF HEXFET® Power MOSFET VDSS RDS(on) max 5.7m: 25V Qg 10nC D Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant S S D G G D-Pak I-Pak IRLR8256PbF IRLU8256PbF G D S Gate Drain Source Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 81 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 57 ID @ TC = 25°C ID @ TC = 100°C IDM c PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Units 25 V f f A 325 g g 63 W 31 0.42 -55 to + 175 W/°C °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter h RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient g Typ. Max. ––– 2.4 ––– 50 ––– 110 Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through † are on page 11 www.irf.com 1 08/02/11 IRLR/U8256PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 25 ––– ––– 18 ––– ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– 4.2 6.7 5.7 8.5 VGS(th) ΔVGS(th)/ΔTJ Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current 1.35 ––– ––– 1.8 -7.2 ––– Gate-to-Source Forward Leakage ––– ––– ––– ––– Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge ––– 81 ––– ––– ––– 10 2.35 V VDS = VGS, ID = 25μA ––– mV/°C VDS = 20V, VGS = 0V 1.0 μA VDS = 20V, VGS = 0V, TJ = 125°C 150 VGS = 20V 100 nA VGS = -20V -100 ––– S VDS = 13V, ID = 20A 15 Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 2.3 1.6 ––– ––– Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 3.6 2.6 ––– ––– ––– ––– 5.1 9.0 ––– ––– Turn-On Delay Time Rise Time ––– ––– ––– 2.5 9.7 46 3.9 ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 12 8.5 ––– ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 1470 453 185 ––– ––– ––– IGSS gfs Qg Qsw Qoss RG td(on) tr Output Charge Gate Resistance V VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA mΩ nC e e VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A VDS = 13V VGS = 4.5V ID = 20A See Fig. 16 nC VDS = 16V, VGS = 0V Ω ns pF e VDD = 13V, VGS = 4.5V ID = 20A RG = 1.8Ω See Fig. 14 VGS = 0V VDS = 13V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c Max. 86 20 6.3 Typ. ––– ––– ––– d c Units mJ A mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) ISM ––– ––– 325 VSD Pulsed Source Current (Body Diode) Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 19 17 29 26 ns nC TJ = 25°C, IF = 20A, VDD = 13V di/dt = 250A/μs ton Forward Turn-On Time 2 c ––– ––– 81 MOSFET symbol f A showing the integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRLR/U8256PbF 1000 1000 100 BOTTOM 10 1 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 100 BOTTOM 10 2.5V ≤60μs PULSE WIDTH 2.5V ≤60μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 Tj = 175°C 1 100 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 100 T J = 175°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 25A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8 -60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRLR/U8256PbF 10000 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss VDS= 20V VDS= 13V 4.0 3.0 2.0 1.0 0.0 100 1 10 0 100 1000 3 4 5 6 7 8 9 10 11 12 13 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 2 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 TJ = 175°C 10 T J = 25°C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 2.5 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 100 1msec 10msec 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U8256PbF 90 2.5 Limited By Package VGS(th), Gate threshold Voltage (V) 80 ID, Drain Current (A) 70 60 50 40 30 20 10 0 2.0 1.5 ID = 25μA 1.0 0.5 25 50 75 100 125 150 175 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ1 τ2 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 1E-005 0.0001 τ4 τ4 τ τi (sec) 0.04252 0.000007 0.57953 0.000109 1.17480 0.001003 0.60472 0.005976 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (°C/W) R4 R4 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U8256PbF 15V + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG 20V VGS DRIVER L VDS 400 ID TOP 5.57A 8.50A BOTTOM 20A 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms V DS V GS RG Current Regulator Same Type as D.U.T. D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 50KΩ 12V RD .2μF Fig 14a. Switching Time Test Circuit .3μF D.U.T. + V - DS VDS 90% VGS 3mA IG ID Current Sampling Resistors 10% VGS td(on) Fig 13. Gate Charge Test Circuit 6 tr t d(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRLR/U8256PbF D.U.T Driver Gate Drive P.W. + ƒ + ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U8256PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 2001 IN THE AS SEMBLY LINE "A" PART NUMBER INTERNAT IONAL RECTIF IER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 12 116A 34 AS SEMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in ass embly line pos ition indicates "Lead-Free" qualification to the consumer-level OR INT ERNATIONAL RECTIF IER LOGO PART NUMBER IRFR120 12 AS SEMBLY LOT CODE 34 DAT E CODE P = DESIGNATES LEAD-F REE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-F REE PRODUCT QUALIFIED TO T HE CONS UMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASS EMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRLR/U8256PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRF U120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 2001 IN T HE AS S EMBLY LINE "A" INT E RNAT IONAL RECT IF IER LOGO PART NUMBER IRFU120 119A 56 78 AS S EMBLY LOT CODE Note: "P" in as s embly line pos ition indicates Lead-Free" DAT E CODE YE AR 1 = 2001 WE EK 19 LINE A OR INT ERNAT IONAL RE CT IFIER LOGO PART NUMBER IRFU120 56 AS S EMBLY LOT CODE 78 DAT E CODE P = DES IGNAT ES LE AD-FREE PRODUCT (OPT IONAL) YEAR 1 = 2001 WEEK 19 A = AS S EMBLY S IT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRLR/U8256PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRLR/U8256PbF Orderable part number Package Type IRLR8256PBF IRLR8256TRPBF D-PAK D-PAK IRLR8256PBF I-PAK Standard Pack Form Quantity Tube/Bulk 75 Tape and Reel 2000 Tube/Bulk Note 75 Qualification Information† Qualification level Industrial †† ††† (per JEDEC JESD47F guidelines) Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. Moisture Sensitivity Level D-PAK MSL1 (per JEDEC J-STD-020D†††) Not applicable I-PAK RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 20A. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. … When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Rθ is measured at TJ approximately 90°C. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-790 Visit us at www.irf.com for sales contact information.08/2011 www.irf.com 11 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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