IRLTS2242TRPBF

IRLTS2242PbF HEXFET® Power MOSFET VDSS VGS RDS(on) max (@ VGS = -4.5V) RDS(on) max (@ VGS = -2.5V) Qg (typical) ID (@TA = 25°C) -20 V   D 1 6   A D ± 12 V 32 m D 2 5 D 55 m G 3 4 S 12 nC -6.9 A Top View TSOP-6 Applications  Battery operated DC motor inverter MOSFET  System/Load Switch Features Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Base part number   Package Type   IRLTS2242TRPbF TSOP-6 Benefits results in Multi-Vendor Compatibility Environmentally Friendlier  Increased Reliability Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLTS2242TRPbF Absolute Maximum Ratings   Parameter   Max. Units VDS Drain-to-Source Voltage - 20 VGS Gate-to-Source Voltage ± 12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V -6.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V -5.5 IDM Pulsed Drain Current  -55 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 0.02 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range V A W W/°C °C Notes  through  are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF   Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss   Min. -20 ––– ––– ––– -0.4 ––– ––– ––– ––– ––– 8.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––   Typ. ––– 9.4 26 45 ––– -3.8 ––– ––– ––– ––– ––– 12 1.5 4.3 17 5.8 18 81 68 905 280 200   Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Thermal Resistance Min. Typ. Max. ––– ––– -2.0 ––– ––– -55 ––– ––– ––– ––– 41 16 -1.2 62 24 Units   Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -6.9A  VGS = -2.5V, ID = -5.5A  VDS = VGS, ID = -10µA VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V,TJ= 125°C VGS = -12V VGS = 12V VDS = -10V, ID = -5.5A VDS = -10V VGS = -4.5V ID = -5.5A VDD = -10V, VGS = -4.5V ID = -5.5A RG = 6.8 VGS = 0V VDS = -10V ƒ = 1.0KHz   Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS= -5.5A, VGS=0V  TJ = 25°C, IF = -5.5A, VDD = -16V di/dt = 100A/µs  D A Junction-to-Ambient  G S V ns nC   Parameter RJA   Max. Units ––– V ––– mV/°C 32 m 55 -1.1 V ––– mV/°C -1.0 µA -150 -100 nA 100 ––– S ––– nC ––– –––     ––– ns ––– –––   –––   ––– pF ––– –––         Typ. –––   Max. 62.5 Units °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature. Pulse width  400µs; duty cycle  2%.  When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF   100 100 10 BOTTOM 1 -1.40V 60µs PULSE WIDTH 10 BOTTOM -1.40V 1 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 1.4 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 100 10 T J = 150°C T J = 25°C VDS = -10V 60µs PULSE WIDTH ID = -6.9A VGS = -4.5V 1.2 1.0 0.8 0.6 1.0 0 1 2 3 4 -60 -40 -20 0 5 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= -5.5A -V GS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd Ciss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -V GS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Coss Crss 100 12.0 VDS= -16V VDS= -10V 10.0 VDS= -4.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS -10V -4.50V -2.50V -2.25V -2.00V -1.80V -1.55V -1.40V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -4.50V -2.50V -2.25V -2.00V -1.80V -1.55V -1.40V www.irf.com © 2014 International Rectifier 0 5 10 15 20 25 30 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF   1000 ID, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 100 10 T J = 150°C T J = 25°C 1 VGS = 0V 0.4 0.6 0.8 1.0 1.2 100 100µsec 10 1msec 1 10msec 0.1 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) -V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.4 -V GS(th) , Gate threshold Voltage (V) 8 -I D, Drain Current (A) DC Tc = 25°C Tj = 150°C Single Pulse 0.01 0.1 0.2 OPERATION IN THIS AREA LIMITED BY R DS(on) 6 4 2 1.2 1.0 0.8 0.6 ID = -10µA 0.4 ID = -250µA ID = -1.0mA 0.2 ID = -10mA 0.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 100 Thermal Response ( Z thJA ) °C/W D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 0.01 0.001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF 70 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m)   ID = -6.9A 60 50 40 TJ = 125°C 30 20 TJ = 25°C 10 0 0 2 4 6 8 10 450 400 350 Vgs = -2.5V 300 250 200 150 100 Vgs = -4.5V 50 0 12 0 10 Fig 12. On–Resistance vs. Gate Voltage 40 50 60 Fig 13. Typical On–Resistance vs. Drain Current 120 16000 ID TOP -1.3A -2.0A BOTTOM -5.5A 14000 12000 80 Power (W) EAS , Single Pulse Avalanche Energy (mJ) 30 -I D, Drain Current (A) -VGS, Gate -to -Source Voltage (V) 100 20 60 40 10000 8000 6000 4000 20 2000 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current 0 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 Time (sec) Fig 15. Typical Power vs. Time Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF   VDD  Fig 17a. Gate Charge Test Circuit Fig 18a. Unclamped Inductive Test Circuit Fig 19a. Switching Time Test Circuit 6 www.irf.com © 2014 International Rectifier Fig 17b. Gate Charge Waveform Fig 18b. Unclamped Inductive Waveforms Fig 19b. Switching Time Waveforms Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF   TSOP-6 Package Outline   TSOP-6 Part Marking Information Y = YEAR W = WEEK PART NUMBER WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR TOP LOT CODE PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 G = IRF5803 H = IRF5804 I = IRF5805 J = IRF5806 K = IRF5810 N = IRF5802 DATE CODE MARKING INSTRUCTIONS O= P= R= S= IRLTS6342TRPBF IRFTS8342TRPBF IRFTS9342TRPBF Not applicable T = IRLTS2242TRPBF 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETTER YEAR Note: A line above the work week (as shown here) indicates Lead-Free. Y 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRLTS2242PbF   TSOP-6 Tape and Reel Information 8mm FEED DIRECTION 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualifiction Information†   Consumer†† (per JEDEC JESD47F†††guidelines) Qualification Level   Moisture Sensitivity Level TSOP-6 MSL1 (per IPC/JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/18/2014 Comment  Updated data sheet with IR corporate template. Updated figure 12 on page 5 for VGS from “20V” to “12V” due to error. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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