PTFA071701EV4R250XTMA1

PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description -25 55 50 ue IM3 -35 45 40 tin IM5 -45 Efficiency -50 -55 IM7 -60 -65 44 46 d 60 Drain Efficiency (%) -20 sc on Intermodulation Distortion (dBc) VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -40 48 50 s uc t PTFA071701F* Package H-37248-2 Features Two-tone Drive-up -30 PTFA071701E* Package H-36248-2 pr od The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 52 35 30 25 • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = –50 dBc • Typical CW performance, 770 MHz, 30 V - Output power at P–1dB = 165 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power 20 15 54 di Output Power, PEP (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average, ƒ1 = 760, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 18.5 — dB Drain Efficiency ηD — 32 — % ACPR — –36 — dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet – DRAFT ONLY 1 of 9 Rev. 04, 2015-01-14 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 0.9 A, POUT = 150 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz Min Typ Max Unit Gain Gps 18.0 18.7 — dB Drain Efficiency ηD 44 46 — % Intermodulation Distortion IMD — –29.5 dBc s Symbol –28 Min Typ Max Unit V(BR)DSS 65 — — V IDSS — — 1.0 µA IDSS — — 10.0 µA DC Characteristics Conditions Symbol Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA Drain Leakage Current VDS = 30 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.0 A VGS 2.0 2.48 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Symbol Value Unit VDSS 65 V VGS –0.5 to +12 V TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 170 W CW) RθJC 0.38 °C/W ue d On-State Resistance tin VDS = 63 V, V GS = 0 V pr od Characteristic uc t Characteristic Parameter Drain-Source Voltage Gate-Source Voltage di Junction Temperature sc on Maximum Ratings Ordering Information Type and Version Package Type Package Description Shipping PTFA071701E V4 H-36248-2 Slotted flange, single-ended Tray PTFA071701E V4 R250 H-36248-2 Slotted flange, single-ended Tape & Reel 250 pcs PTFA071701F V4 H-37248-2 Earless flange, single-ended Tray PTFA071701F V4 R250 H-37248-2 Earless flange, single-ended Tape & Reel 250 pcs *See Infineon distributor for future availability. Data Sheet – DRAFT ONLY 2 of 9 Rev. 04, 2015-01-14 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Broadband Performance VDD = 30 V, IDQ = 0.9 A, ƒ = 770 MHz VDD = 30 V, IDQ = 900 mA, POUT = 75 W 18 35 17 25 16 15 Efficiency 15 5 30 35 40 45 50 s -5 Efficiency 40 35 Output Power (dBm) -15 Return Loss 30 -20 25 -25 Gain 20 15 700 55 -10 -30 730 Input Return Loss (dB) 45 Gain 45 uc t 55 0 pr od 20 50 Gain (dB), Efficiency (%) 65 Drain Efficiency (%) 21 19 Gain (dB) Power Sweep, CW Conditions -35 790 760 tin ue d Frequency (MHz) Power Sweep IDQ = 0.9 A, ƒ = 770 MHz VDD = 30 V, ƒ = 770 MHz 56 52 48 44 40 Efficiency 21 20 20 19 18 17 Power Gain (dB) Gain di Drain Efficiency (%) 60 21 Gain (dB) 64 sc on CW Performance at Selected Voltages 16 V DD = 32 V V DD = 30 V V DD = 28 V 49 50 51 52 17 IDQ = 0.9 A IDQ = 0.7 A 30 53 Output Power (dBm) Data Sheet – DRAFT ONLY 18 15 14 48 19 16 15 36 IDQ = 1.3 A IDQ = 1.1 A 35 40 45 50 55 Output Power (dBm) 3 of 9 Rev. 04, 2015-01-14 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Reference Circuit 0.001µF R1 1.2K V QQ1 LM7805 VDD R4 2K V uc t R3 2K V C3 0.001µF R5 2K V R6 5.1K V C4 0.1µF R7 10 V C5 10µF 35V L1 R8 5.1K V C6 4.7µF C7 0.1µF C8 62pF C12 62pF l4 DUT l2 l3 C11 6.2pF sc on tin C10 3.9pF l8 l5 ue l1 VDD C14 10µF 50V C13 2.2µF l6 R9 10 V C9 62pF J1 pr od C2 0.001µF s Q1 BCP56 d R2 1.3K V C15 0.1µF C22 3.3pF l9 l10 C16 10µF 50V C24 62pF l11 l12 J2 C23 3.3pF l7 L2 C17 62pF C18 2.2µF C19 10µF 50V C20 0.1µF C21 10µF 50V Reference circuit schematic for ƒ = 770 MHz LDMOS Transistor Rogers RO4350 1 oz. copper Microstrip Dimensions: L x W ( mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6, l7 l8 l9 (taper) l10 (taper) l11 l12 di Circuit Assembly Information DUT PTFA071701E or PTFA071701F PCB 0.76 mm [.030"] thick, εr = 3.48 Electrical Characteristics at 770 MHz 0.025 0.053 0.035 0.148 0.094 0.103 0.139 0.062 0.002 0.005 0.016 Data Sheet – DRAFT ONLY λ, 50.7 Ω λ, 38.4 Ω λ, 38.4 Ω λ, 76.7 Ω λ, 7.8 Ω λ, 44.5 Ω λ, 8.4 Ω λ, 8.4 Ω / 33.8 Ω λ, 33.8 Ω / 38.4 Ω λ, 38.4 Ω λ, 50.7 Ω 5.84 x 1.65 12.32 x 2.54 8.00 x 2.54 35.94 x 0.76 20.32 x 17.78 24.13 x 2.03 29.97 x 16.51 13.46 x 16.51 / 3.05 0.51 x 3.05 / 2.54 1.27 x 2.54 3.76 x 1.65 5 of 9 0.230 0.485 0.315 1.415 0.800 0.950 1.180 0.530 0.020 0.050 0.148 x 0.065 x 0.100 x 0.100 x 0.030 x 0.700 x 0.080 x 0.650 x 0.650 / 0.120 x 0.120 / 0.100 x 0.100 x 0.065 Rev. 04, 2015-01-14 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Reference Circuit (cont.) C3 C2 R8 L1 C4 Q1 C12 R2 C13 C14 C15 s C5 R3 C16 R9 C9 pr od RF_IN R7 R1 C1 uc t C7 C6 R4 R5 QQ 1 R6 C8 C10 C11 C18 C24 RF_OUT C23 C21 C19 C20 L2 tin ue d C17 C22 a071701 ghl - v 1_cd _4- 15 - 09 Reference circuit assembly diagram* (not to scale) Description sc on Component di C1, C2, C3 Capacitor, 0.001 µF C4, C7, C15, C20 Capacitor, 0.1 µF C6 Capacitor, 4.7 µF, 16 V C5 Tantalum capacitor, 10 µF, 35 V C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF C10 Ceramic capacitor, 3.9 pF C11 Ceramic capacitor, 6.2 pF C13, C18 Capacitor, 2.2 µF C14, C16, C19, C21 Tantalum capacitor, 10 µF, 50 V C22, C23 Ceramic capacitor, 3.3 pF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage regulator R1 Chip resistor, 1.2k Ω R2 Chip resistor, 1.3k Ω R3, R5 Chip resistor, 2k Ω R4 Potentiometer, 2k Ω R6, R8 Chip resistor, 5.1k Ω R7, R9 Chip resistor, 10 Ω *Gerber files for this circuit available on request Data Sheet – DRAFT ONLY Suggested Manufacturer P/N or Comment Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCC104BCT-ND PCS3475CT-ND 399-1655-2-ND 100B 620 100B 3R9 100B 7R5 920C 202 TPSE106K050R0400 100B 3R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND 6 of 9 Rev. 04, 2015-01-14 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 CL 45° X 2.720 [45° X .107] 4.826±0.510 [.190±0.020] uc t s D S FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] +0.004 .370 19.431±0.510 -0.006 [.765±0.020] CL ] pr od [ 2X R1.626 [R.064] G 4X R1.524 [R.060] tin ue d 2X 12.700 [.500] 3.632±0.380 0.0381 [.0015] -A- di SPH 1.575 [.062] 19.812±0.200 [.780±0.008] sc on 1.016 [.040] 27.940 [1.100] C66065-A2322-C001-01-0027_h-36248-2_11-11-09 CL 34.036 [1.340] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 [0.004]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet – DRAFT ONLY 7 of 9 Rev. 04, 2015-01-14 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 [45° X .107] 4.826±0.510 [.190±0.020] 4X R0.508+.381 -.127 R.020+0.015 -0.005 D [ s uc t LID 9.398+0.100 -0.150 .370+0.004 -0.006 ] 19.431±0.510 [.765±0.020] pr od FLANGE 9.779 [.385] ] [ d G sc on tin SPH 1.575 [.062] ue 2X 12.700 [.500] 19.812±0.200 [.780±0.008] 1.016 [.040] 0.0381 [.0015] -A- di 3.632±0.380 [.143±0.015] S C66065-A2323-C001-01-0027_h-37248-2_11-11-09 CL 20.574 [.810] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 [0.004]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet – DRAFT ONLY 8 of 9 Rev. 04, 2015-01-14 PTFA071701E/F V4 Confidential, Limited Internal Distribution Revision History: 20   Previous Version: 2009-11-11, Data Sheet Subjects (major changes since last revision) Products discontinued. Please see PD notes: PD_215_14. s Page All Data Sheet uc t We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: pr od highpowerRF@infineon.com d To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 20   sc on Published by Infineon Technologies AG 81726 Munich, Germany tin ue GOLDMOS® is a registered trademark of Infineon Technologies AG. © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer di The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet – DRAFT ONLY 9 of 9 Rev. 04, 2015-01-14