PTFB192557SHV1XWSA1

PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been optimized for maximum performance as the peak side transistor in Doherty amplifiers. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 1.35 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, 3.84 MHz BW d e nd 18 30 e 15 Efficiency m o ec m 34 36 38 40 42 44 46 48 50 52 54 20 10 Efficiency (%) Gain (dB) 40 Gain 16 w e n • Input and output internal matching 50 17 s e d n g i • Optimized for use as peak side in Doherty amplifiers 20 19 PTFB192557SH Package H-34288G-4/2 (formed leads) r o f • Typical CW pulsed performance, 1990 MHz, 28 V - Output power at P1dB = 250 W - Efficiency = 55% - Gain = 18.6 dB • Integrated ESD protection • Low thermal resistance • Pb-free and RoHS-compliant • Capable of handling 10:1 VSWR at 28 V, 250 W (CW) ouput power 0 r t RF Characteristics no Output Power (dBm) Single-carrier WCDMA Performance (tested in standard Infineon test fixture) (WCDMA signal: 3GPP, 3.84 MHz channel bandwidth, with 10 dB peak/average @ 0.01% CCDF) VDD = 28 V, IDQ = 1.35 A, POUT = 60 W average, ƒ = 1990 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 — dB Drain Efficiency hD 29 31 — % Adjacent Channel Power Ratio ACPR — –33.5 –32 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 03, 2015-10-01 PTFB192557SH Target RF Characteristics (cont.) DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 Operating Gate Voltage VDS = 28 V, IDQ = 1.35 A VGS 2.3 2.8 Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage d e nd Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70°C, 200 W CW) Type and Version m m o ec Ordering Information Order Code r t no e w e n si de — — W 3.3 V 1 µA gn Symbol Value VDSS 65 V VGS –6 to +10 V TJ 200 °C TSTG –40 to +150 °C RqJC 0.232 r o f Package and Description Unit °C/W Shipping PTFB 192557SH V1 R250 PTFB192557SHV1R250XTMA1 H-34275G-6/2, ceramic open-cavity, formed leads, earless Tape & Reel, 250 pcs Data Sheet 2 of 8 Rev. 03, 2015-10-01 PTFB192557SH Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 1.35 A, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz VDD = 28 V, IDQ = 1.35 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, 3.84 MHz BW -15 IMD (dBc) / ACPR (dBc) IM3 Low IM3 Up -20 IMD (dBc) -25 -30 -35 1990 1960 1930 -40 -45 -20 -30 -40 -45 Output Power (dBm) d e nd ew -50 -55 n r fo m o ec e 18 60 -20 50 -30 40 30 Efficiency 20 17 10 16 40 42 44 46 48 50 52 54 IMD (dBc) Gain (dB) 19 20 ACPR 15 10 5 b192557sh-gr3c 0 Output Power (dBm) 3rd Order -40 5th -50 7th -60 -70 -80 0 b192557sh-gr5c 37 39 41 43 45 47 49 51 53 55 Output Power, PEP (dBm) Output Power (dBm) Data Sheet 25 VDD = 28 V, IDQ = 1.35 A, ƒ1 = 1989 MHz, ƒ2 = 1990 MHz Drain Efficiency (%) Gain r t no 30 Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 1.35 A, ƒ = 1990 MHz, 20 de 35 34 36 38 40 42 44 46 48 50 52 54 m Power Sweep, CW Performance 40 gn si -35 -60 b192557sh-gr2c 34 36 38 40 42 44 46 48 50 52 54 IMD Up -25 45 Efficiency IMD Low Drain Efficiency (%) -15 3 of 8 Rev. 03, 2015-10-01 PTFB192557SH Typical Performance (cont.) CW Gain Performance at IDQ CW Performance VDD = 28 V, ƒ = 1990 MHz VDD = 28 V, IDQ = 1.35 A, ƒ = 1990 MHz 40 18 30 17 20 Efficiency 16 15 37 39 41 43 45 47 19 Gain (dB) Gain 19 IDQ = 3.2 A 50 –10°C Efficiency (%) Gain (dB) 20 20 60 +85°C 51 53 17 0 55 d e nd e m Single-carrier WCDMA Broadband Performance m o ec Efficiency -20 30 20 -10 -30 IMD3 Gain 10 1800 1850 1900 1950 2000 2050 2100 -40 -50 43 45 47 49 51 53 55 Output Power, PEP (dBm) 0 Return Loss 50 40 Efficiency 20 IMD3 Gain 1800 1850 -10 -20 30 10 2150 -30 -40 1900 1950 2000 2050 2100 -50 2150 Frequency (MHz) Frequency (MHz) Data Sheet 41 60 Gain (dB) / Efficiency (%) 40 Return Loss 39 VDD = 28 V, IDQ = 1.35 A, POUT = 100 W, 3GPP WCDMA signal, TM1 w/ 64 DPCH, 100% clipping, 10:1 PAR, 3.84 MHz BW Return Loss (dB) / IMD (dBc) Gain (dB) / Efficiency (%) 50 0 r o f 37 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 1.35 A, POUT = 100 W, 3GPP WCDMA signal, TM1 w/ 64 DPCH, 43% clipping, 7.5:1 PAR, 3.84 MHz BW r t no w e n IDQ = 2.0 A Output Power, PEP (dBm) 60 IDQ = 2.6 A 18 10 49 s e d n g i Return Loss (dB) / IMD (dBc) +25°C 21 4 of 8 Rev. 03, 2015-10-01 PTFB192557SH Broadband Circuit Impedance Z Source W Frequency MHz R jX 1900 2.36 1910 Z Load W D R jX –5.38 2.18 –1.47 2.32 –5.32 2.20 –1.42 1920 2.28 –5.26 2.23 –1.37 1930 2.24 –5.19 2.26 –1.32 1940 2.21 –5.13 2.29 –1.27 1950 2.17 –5.07 2.32 –1.22 1960 2.13 –5.01 2.35 –1.17 1970 2.10 –4.95 2.38 –1.12 1980 2.07 –4.89 2.42 –1.07 1990 2.03 –4.83 2.46 –1.03 2000 2.00 –4.77 2.49 –0.98 Z Source G S Reference Circuit R803 C802 (60) e R801 S3 m m o ec R804 R103 S2 R102 C103 C101 r o f w e n RO4350, .020 VDD s e d n g i (61) C803 R802 C205 C204 C210 C203 S1 VDD R102 C104 PTFB192557SH r t no d e nd C801 RO4350, .020 Z Load RF_IN C106 C108 C107 C105 C201 C208 RF_OUT VDD R101 C102 C202 C209 C207 C206 PTFB192557S_OUT_01 PTFB192557S_IN_01 b192557sh_cd_11-28-12 Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT PTFB192557SH V1 Test Fixture Part No. LTN/PTFB192557SH PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at(http://www.infineon.com/rfpower) Data Sheet 5 of 8 Rev. 03, 2015-10-01 PTFB192557SH Reference Circuit (cont.) Component Information Component Description Suggested Supplier P/N C101, C107 Chip capacitor, 5 µF Digi-Key PCS3475CT-ND C102, C103 Chip capacitor, 10 pF ATC ATC100A100JW500XB C104, C105 Chip capacitor, 2 pF ATC ATC100A2R2CW500XB C106 Chip capacitor, 10 pF ATC ATC100B100JW500XB C108 Chip capacitor, 2 pF ATC ATC100A2R0CW150XB R101, R102 Resistor, 10 W Digi-Key P10GCT-ND R103, C104 Resistor, 10 W Digi-Key P10ECT-ND S1 Potentiometer, 2k W Digi-Key S2 Transistor Infineon Technologies S3 Voltage Regulator Digi-Key C201, C202, C203, C204, C205, C206, C210, C211 Capacitor, 10 µF Digi-Key ATC Input Output C207 Chip capacitor, 2 pF C208 Chip capacitor, 18 pF C209 Chip capacitor, 1 pF d e nd ATC ATC r o f s e d n g i 3224W-202ECT-ND w e n BCP56-ND LM780L05ACM-ND 587-1818-2-ND ATC100A1R7CW150XB ATC100B180JW500XB ATC100B0R9CW500XB e m m o ec r t no Data Sheet 6 of 8 Rev. 03, 2015-10-01 PTFB192557SH Package Outline Specifications Package H-34288G-4/2 (formed leads) d e nd r o f w e n s e d n g i e m m o ec r t no Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: G – gate, D – drain, S – source, V – VDD. 5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet 7 of 8 Rev. 03, 2015-10-01 PTFB192557SH V1 Revision History: 2015-10-01 Previous Version: 2012-11-28 , Data Sheet Page all Data Sheet Subjects (major changes since last revision) Not recommended for new design We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International d e nd r o f w e n s e d n g i e Edition 2015-10-01 Published by Infineon Technologies AG 85579 Neubiberg, Germany m m o ec r t no © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 03, 2015-10-01