PTMA080152MV1AUMA1

PTMA080152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband driver applications in the 700 to 1000 MHz frequency range. It is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. Features Two-tone Drive-up VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA ƒ = 920, 940, 960 MHz 50 • Broadband on-chip matching, 50-ohm input and ~10-ohm output • Typical GSM/EDGE performance at 28 V, 920 to 960 MHz - Gain = 30 dB - Efficiency = 34% at 8 W output power - EVM @ 8 W = 1.5% - ACPR @ 400 kHz = –61 dBc - ACPR @ 600 kHz = –75 dBc • Typical CW performance, 940 MHz, 28 V - Output power at P1dB = 20 W - Efficiency = 49% • Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F. -55 • Excellent thermal stability, low HCI drift -60 • Capable of handling 10:1 VSWR @ 28 V, 20 W (CW) output power • RoHS-compliant package -10 45 -15 PAE 40 -20 35 -25 30 -30 25 -35 IMD3 -40 40 20 15 -45 920 MHz 940 MHz 10 5 -50 0 27 29 31 33 35 37 39 41 IMD D3 (dBc) Power Adde ed Efficiency (%) PTMA080152M Package PG-DSO-20-63 43 Average Output Power ( dBm ) RF Characteristics GSM/EDGE Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 920 to 960 MHz, POUT = 8 W Avg. Characteristic Symbol Min Typ Max Unit Input Return Loss IRL — –15 — dB Gain Gps — 30 — dB Power Added Efficiency PAE — 34 — % Error Vector Magnitude EVM (RMS) — 1.5 — % table continued next page All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 07, 2014-05-07 PTMA080152M RF Characteristics (cont.) GSM/EDGE Characteristics (cont.) VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 920 to 960 MHz, POUT = 8 W Avg. Characteristic Modulation Spectrum Symbol Min Typ Max Unit 400 kHz offset ACPR1 — –61 — dBc 600 kHz offset ACPR2 — –75 — dBc Spurs Load 3:1 — — — –60 dBc Gain Flatness ΔG — 0.2 — dB Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA, POUT = 8 W avg., ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 29 30 — dB Drain Efficiency ηD 32.5 33.5 — % IMD3 — –34 –31 dBc Symbol Min Typ Max Unit Third Order Intermodulation Distortion DC Characteristics Stage 1 Characteristics Conditions Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 3.48 — Ω Operating Gate Voltage VDS = 28 V, IDQ1 = 70 mA, VGS 2.0 2.5 3.0 V Stage 2 Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — Ω Operating Gate Voltage VDS = 28 V, IDQ2 = 90 mA VGS 2.0 — 3.0 V Data Sheet 2 of 11 Rev. 07, 2014-05-07 PTMA080152M Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power PIN 15 dBm Total Device Dissipation PD 91 W 0.52 W/°C TSTG –40 to +150 °C Stage 1 RθJC 8.5 °C/W Stage 2 RθJ0C 2.5 °C/W Above 25°C derate by Storage Temperature Range Overall Thermal Resistance (TCASE = 70°C) POUT = 15 W, IDQ1 = 70 mA, IDQ2 = 90 mA Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD-020 260 °C Ordering Information Type and Version Order Code Package and Description Shipping PTMA080152M V1 PTMA080152MV1AUMA1 PG-DSO-20-63, molded plastic Tape & Reel, 250 pcs PTMA080152M V1 R500 PTMA080152MV1R500AUMA1 PG-DSO-20-63, molded plastic Tape & Reel, 500 pcs Data Sheet 3 of 11 Rev. 07, 2014-05-07 PTMA080152M Typical Performance (data taken in Infineon production test fixture) CW Performance Broadband Performance VDD = 28 V V, IDQ1 = 70 mA, mA IDQ2 = 90 mA ƒ = 920 , 940, 960 MHz VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA, fixture tuned for 920 – 960 MHz 32 60 28 55 50 24 45 920 MHz 940 MHz 960 MHz 22 20 40 35 30 18 16 25 PAE 14 20 12 15 10 10 29 31 33 35 37 39 41 43 -4 Gain 24 -8 20 -12 16 -16 12 -20 Return Loss 8 -24 4 -28 0 -32 750 45 800 850 900 950 1000 1050 1100 1150 Frequency (MHz) Output Power (dBm) EDGE - EVM EDGE - EVM VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, q series are at selected frequencies VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, ƒ = 942.6 MHz 50 90 °C –25 °C 25 °C 45 40 9 8 35 7 30 6 25 5 20 4 PAE 15 EVM 10 5 3 2 1 0 Powerr Added Effficiency (%)) 10 Error Vector V Magnitude (%) Power Added Efficiency (%) 50 45 40 9 8 35 7 30 EVM 25 20 6 5 4 PAE 15 3 10 2 5 1 0 0 0 30 31 32 33 34 35 36 37 38 39 40 41 42 30 31 32 33 34 35 36 37 38 39 40 41 42 Output Power (dBm) Output Power (dBm) Data Sheet 10 925.2 MHz 942 6 MH 942.6 MHz 959.8 MHz Error V Vector Mag gnitude (%)) Gain ((dB) 26 Gain (dB) Gain 28 0 Retturn Loss (dB) 65 30 Power Added E Efficiency(%) 32 4 of 11 Rev. 07, 2014-05-07 PTMA080152M Typical Performance (cont.) EDGE Modulation Spectrum Performance EDGE Modulation Spectrum Performance VDD = 28 V V, IDQ1 = 70 mA mA, IDQ2 = 120 mA mA, series show ƒ = 942.6 MHz, at selected temperatures VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 120 mA, series are at selected frequencies -35 -45 30 -55 20 -65 400 kHz 10 -75 600 kH kHz 0 30 32 34 36 38 -40 925.2 MHz 942.6 MHz 959.8 MHz 40 35 PAE -45 -50 30 -55 25 -60 20 -65 400 kHz 15 -70 -75 75 10 5 -80 600 kHz 0 -85 40 -35 45 -85 30 42 Mod dulation Spectrum (dBc) 40 PAE Powe er Added Efficiency (%) 50 90 °C –25 °C 25 °C Modulatio on Spectrum (dBc) Power Add P ded Efficie ency (%) 50 32 34 36 38 40 42 Output Power (dBm) Output Power (dBm) Gate – Source Voltage vs. Temperature Norm malized G Gate – So ource Volttage (th hreshold), V VDD = 28 V, IDQ1 = 70 mA, IDQ2 = 90 mA 1.15 VGS1 VGS2 1.10 1.05 Slope = –1.3 mV/°C 1.00 09 0.95 0.90 0.85 -30 -10 10 30 50 70 90 T t Temperature (°C) Data Sheet 5 of 11 Rev. 07, 2014-05-07 PTMA080152M Broadband Circuit Impedance Z Load Ω 740 9.8 –3.1 760 9.5 –2.4 780 9.2 –1.8 800 9.0 –1.2 820 8.8 –0.5 840 8.7 0.1 860 8.6 0.8 880 8.5 1.4 900 8.5 2.1 920 8.5 2.8 940 8.5 3.5 960 8.6 4.3 980 8.7 5.0 1000 8.8 5.8 Z0 = 50 Ω 1. 0 1000 MHz Z Load 0.4 –3.7 0.3 10.1 0.2 720 0.1 –4.3 0.0 10.6 NER 700 A jX LOAD S T OW ARD NGTH R RD GE MHz - W A V E LE NGTH S T OW A Frequency 700 MHz 0.1 See next page for reference circuit information Data Sheet 6 of 11 Rev. 07, 2014-05-07 PTMA080152M Reference Circuit VD1 C1 100μF 50V C2 10μF C3 1μF C4 0.1μF C5 47pF VD2 C15 47 pF DUT J1 2 1 C7 10μF R1 0 C9 0.1μF C8 1μF 19 3 18 4 17 PTMA080152M 16 6 15 14 8 13 9 12 10 11 VG1 R3 2k 20 2 7 C6 1pF variable 1 C16 0.1μF C17 1μF 18 10μF C19 100μF 50V 4 3 C22 33pF 5 6 8 7 J2 C21 5.6pF C20 2.2pF C10 47pF Q1 V G2 R4 2k a 080152 m_ bd_ 8-22-11 variable C11 10μF R2 0 C12 1μF C13 0.1μF C14 47pF Q2 Reference circuit schematic for ƒ = 940 MHz Circuit Assembly Information DUT PTMA080152M, LDMOS IC Reference Fixture Part No. LTN/PTMA080152M PCB 0.76 mm [.030"] thick, εr = 3.48, Rogers RO4350, 1 oz. copper Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower) Microstrip Electrical Characteristics at 940 MHz1 L x W (mm) L x W (in.) 1 0.017 λ, 50.0 Ω 3.00 x 1.70 0.118 x 0.067 2 0.143 λ, 50.0 Ω 24.71 x 1.70 0.973 x 0.067 3 0.024 λ, 10.6 Ω 4.09 x 12.70 0.161 x 0.500 4 0.144 λ, 59.0 Ω 24.77 x 1.30 0.975 x 0.051 5 0.044 λ, 34.0 Ω 7.57 x 3.02 0.298 x 0.119 6 0.044 λ, 44.0 Ω 8.33 x 2.11 0.328 x 0.083 7 0.0702 λ, 44.0 Ω 12.12 x 2.11 0.477 x 0.083 8 0.030 λ, 44.0 Ω 5.18 x 2.11 0.204 x 0.083 Data Sheet 7 of 11 Rev. 07, 2014-05-07 PTMA080152M Reference Circuit (cont.) VD 2 VD 1 C15 C16 C17 C18 C1 C19 C2 C3 C4 C5 C22 RF_IN RF_OUT C10 C9 C8 C6 C21 V G1 C20 C14 C13 C12 C11 C7 R3 V G2 R4 R1 Q1 Q2 R2 a 0 8 0 1 5m2_cd _ 2- 1 0- 0 9 Reference circuit assembly diagram (not to scale) Component Description Suggested Manufacturer C3, C8, C12, C17 Ceramic capacitor, 1 µF Digi-Key P/N or Comment 445-1411-2-ND C4, C9, C13, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C2, C7, C11, C18 Tantalum capacitor, 10 µF, 50 V Digi-Key P5571-ND C1, C19 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND C6 Ceramic capacitor, 1.0 pF ATC 600S 1RO CT C20 Ceramic capacitor, 2.2 pF ATC 600S 2R2 CT C21 Ceramic capacitor, 5.6 pF ATC 600S 5R6 CT C22 Ceramic capacitor, 33 pF ATC 600S 330 JT C5, C10, C14, C15 Ceramic capacitor, 47 pF ATC 600S 470 JT Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key PXXECT-ND R3, R4 Variable resistor, 2K ohms Digi-Key 3224W-202ETR-ND Data Sheet 8 of 11 Rev. 07, 2014-05-07 PTMA080152M Pinout Diagram (top view) VDD 1 1 20 NC VDD 1 2 19 NC NC 3 18 VDD 2, RF Out NC 4 17 VDD 2, RF Out RF In 5 16 VDD 2, RF Out RF In 6 15 VDD 2, RF Out VG 1 7 14 VDD 2, RF Out VG 2 8 13 VDD 2, RF Out NC 9 12 NC NC 10 11 NC a 0 8 0 1 5 m2 _ p d _ 1 0 -3 1 -0 8 Source/ground: plated copper heatslug on backside of package (Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet 9 of 11 Rev. 07, 2014-05-07 PTMA080152M Package Outline Specifications Package PG-DSO-20-63   >@0$; ,1'(;3,1   ; >@0$; 3/6 “ >“@    >@ >@  >@   ;  ;  7239,(: %277209,(:  >@0$; 3/6  ƒ“ƒ3/6 723%27720 $//6,'(6 “ >“@ 6(('(7$,/$  >@0$;  >@  “ >“@  >@  (1'9,(: PP 0 & $ 6 % 6 6,'(9,(:  >@ *$8*(3/$1(  >@5()  ²  >@ ² 3*'62BSRBB  >@ 67$1'2))  “ >“@  >@5() '(7$,/$ Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte): 5 – 15 micron [196.85 – 590.55 microinch]. Refer to Application Note “Recommendations for Printed Circuit Board Assembly of Infineon DSO and SSOP Packages” for additional information. Data Sheet 10 of 11 Rev. 07, 2014-05-07 PTMA080152M V1 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2007-05-05 Preliminary all Preliminary specification for new product in development. 02 2009-02-27 Production all Revise package information and circuit diagrams, add impedance information. 03 2009-08-31 Production 1 Revise VSWR rating. 04 2010-04-16 Production 3; 10 Add moisture sensitivity information; update package outline notes. 05 2011-05-17 Production 2; 4 Revise DC table; remove graph. 06 2011-08-22 Production 2; all Revise two-tone table; minor updates to graphics and diagrams for readability. 07 2014-05-07 Production 3 Add shipping option. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2014-05-07 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 10 Rev. 07, 2014-05-07