SIGC39T60EX1SA3

IG BT TRENCHSTOPTM IGBT3 Chip SIGC39T60E Dat a She et Indust rial Po wer C o ntrol SIGC39T60E Table of Contents Features and Applications ............................................................................................................................... 3 Mechanical Parameters .................................................................................................................................... 3 Maximum Ratings ............................................................................................................................................. 4 Static and Electrical Characteristics .............................................................................................................. 4 Further Electrical Characteristics ................................................................................................................... 5 Chip Drawing ..................................................................................................................................................... 6 Revision History ............................................................................................................................................... 7 Relevant Application Notes ............................................................................................................................. 7 Legal Disclaimer ............................................................................................................................................... 8 L7571L, L7571T 2 Rev. 2.1, 19.07.2017 SIGC39T60E TRENCHSTOPTM IGBT3 Chip Features:  600V trench & field stop technology  Low VCEsat  Low turn-off losses  Short tail current  Positive temperature coefficient  Easy paralleling Recommended for:  Power modules  Discrete components Applications:  Drives  White goods  Resonant applications Chip Type VCE ICn Die Size Package SIGC39T60E 600V 75A 6.59mm x 5.91mm Sawn on foil Mechanical Parameters Die size 6.59 x 5.91 Emitter pad size See chip drawing mm Gate pad size 2 1.52 x 0.82 Area total 38.95 Silicon thickness 70 µm Wafer size 200 mm Maximum possible chips per wafer 686 Passivation frontside Photoimide Pad metal Backside metal 3200nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, ≤500µm  0.65mm; max. 1.2mm Reject ink dot size for original and Storage environment sealed MBB bags (