SMBT3906E6327

SMBT3906...MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration SMBT3906/ MMBT3906 s2A 1=B SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 2=E 3=C - - Package - SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation- Ptot Value 200 330 TS ≤ 115°C, SOT363, MMBT3906S 250 TS ≤ 107°C, SC74, MMBT3906U 330 Tj Storage temperature Tstg 1 V mA mW TS ≤ 71°C, SOT23, MMBT3906 Junction temperature Unit 150 °C -65 ... 150 2012-08-21 SMBT3906...MMBT3906 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value SMBT3906/ MMBT3906 ≤ 240 SMBT3906S ≤ 140 SMBT3906U ≤ 130 Unit mW 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - V(BR)EBO 6 - - ICBO - - 50 IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current nA VCB = 30 V, IE = 0 DC current gain1) - hFE IC = 100 µA, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base emitter saturation voltage1) 1Pulse VBEsat test: t < 300µs; D < 2% 2 2012-08-21 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 250 - - Ccb - - 3.5 Ceb - - 10 td - - 35 tr - - 35 tstg - - 225 tf - - 75 F - - 4 AC Characteristics Transition frequency fT MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 2012-08-21 SMBT3906...MMBT3906 Test circuit Delay and rise time -3.0 V 275 Ω