SPA17N80C3XKSA1

SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature VDS 800 V RDS(on) 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated 1 • Ultra low effective capacitances 2 3 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP17N80C3 PG-TO220 Q67040-S4353 17N80C3 SPA17N80C3 PG-TO220-3-31 SP000216353 17N80C3 Maximum Ratings Parameter Symbol Value SPP Continuous drain current Unit SPA A ID TC = 25 °C 17 17 1) TC = 100 °C 11 11 1) 51 51 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 670 670 EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 42 Operating and storage temperature Tj , Tstg mJ ID=3.4A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=17A, VDD=50V Rev. 2.7 Final Data Sheet Page 1 1 -55...+150 W °C 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 640 V, ID = 17 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=17A Values Unit min. typ. max. 800 - - - 870 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS Zero gate voltage drain current I DSS VDS=800V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.7 Final Data Sheet RG µA Tj=25°C - 0.5 25 Tj=150°C - - 250 VGS=20V, V DS=0V - - 100 VGS=10V, ID=11A Ω Tj=25°C - 0.25 0.29 Tj=150°C - 0.78 - f=1MHz, open drain - 0.7 - Page 2 2 nA 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 15 - S pF ID=11A Input capacitance Ciss VGS=0V, VDS=25V, - 2320 - Output capacitance Coss f=1MHz - 1250 - Reverse transfer capacitance Crss - 60 - - 59 - - 124 - Effective output capacitance,5) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,6) Co(tr) time related Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 25 - Rise time tr ID=17A, - 15 - Turn-off delay time td(off) RG =4.7Ω, Tj =125°C - 72 82 Fall time tf - 6 9 - 12 - - 46 - - 91 177 - 6 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=640V, ID=17A VDD=640V, ID=17A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=640V, ID=17A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.7 Final Data Sheet Page 3 3 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 17 - - 51 TC=25°C A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =400V, IF =IS , - 550 - ns Reverse recovery charge Q rr diF/dt=100A/µs - 15 - µC Peak reverse recovery current I rrm - 51 - A Peak rate of fall of reverse dirr/dt - 1200 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP SPA Rth1 0.00812 0.00812 Rth2 0.016 Rth3 Symbol Value Unit SPP SPA Cth1 0.0003562 0.0003562 0.016 Cth2 0.001337 0.001337 0.031 0.031 Cth3 0.001831 0.001831 Rth4 0.114 0.16 Cth4 0.005033 0.005033 Rth5 0.135 0.324 Cth5 0.012 0.008657 Rth6 0.059 2.522 Cth6 0.092 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.7 Final Data Sheet Page 4 4 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 240 SPP17N80C3 45 W W 200 35 160 Ptot Ptot 180 140 30 25 120 20 100 15 80 60 10 40 5 20 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 2.7 Final Data Sheet 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 10 -2 0 10 3 Page 5 5 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2011-09-27 Rev. 2.8, 2017-07-25 3 SPP17N80C3 SPA17N80C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp) ZthJC = f (tp) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W 10 0 ZthJC ZthJC 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 1 s 10 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj =25°C ID = f (VDS); Tj =150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 35 70 A 20V 10V 60 20V 10V 8V 7V A 55 25 45 6.5V 6V ID ID 50 8V 20 40 7V 35 5.5V 15 30 25 6V 5V 10 20 15 4.5V 5V 10 5 4V 5 0 0 5 10 15 20 0 0 30 VDS V Rev. 2.7 Final Data Sheet 5 10 15 20 30 VDS V Page 6 6 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 11 A, VGS = 10 V 1.5 1.6 Ω SPP17N80C3 Ω RDS(on) RDS(on) 1.3 1.2 1.1 4V 4.5V 5V 5.5V 6V 6.5V 1 1.2 1 0.8 0.9 0.6 7V 8V 10V 20V 0.8 0.7 0.4 98% typ 0.2 0.6 0.5 0 5 10 15 20 25 0 -60 35 A -20 20 60 °C 100 ID 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 17 A pulsed parameter: tp = 10 µs 65 16 SPP17N80C3 A V 25°C 55 50 12 VGS ID 45 40 35 150°C 0,2 VDS max 10 0,8 VDS max 8 30 25 6 20 4 15 10 2 5 0 0 2 4 Rev. 2.7 Final Data Sheet 6 8 10 12 14 16 0 0 V 20 VGS 20 40 60 80 100 120 nC 160 QGate Page 7 7 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 10 2 SPP17N80C3 18 A A 14 IF IAR 10 1 12 10 8 10 0 6 Tj = 25 °C typ T j(START)=25°C Tj = 150 °C typ 4 Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V T j(START)=125°C 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 3.4 A, VDD = 50 V 980 700 mJ V 600 940 V(BR)DSS 550 E AS SPP17N80C3 500 450 400 920 900 880 860 350 840 300 820 250 800 200 780 150 100 760 50 740 0 25 50 75 100 720 -60 150 °C Tj Rev. 2.7 Final Data Sheet -20 20 60 100 180 °C Tj Page 8 8 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 17 Avalanche power losses 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.5mJ parameter: VGS =0V, f=1 MHz 10 5 500 pF W 10 4 400 C PAR Ciss 350 300 10 3 250 10 2 200 Coss 150 Crss 10 1 100 50 0 4 10 10 5 10 0 0 6 10 Hz f 100 200 300 400 500 600 800 V VDS 19 Typ. Coss stored energy Eoss=f(VDS) 18 µJ E oss 14 12 10 8 6 4 2 0 0 100 Rev. 2.7 Final Data Sheet 200 300 400 500 600 800 V VDS Page 9 9 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80C3    SPA17N80C3 Definition of diodes switching characteristics Rev. 2.7 Final Data Sheet Page 10 10 2011­09-27 Rev. 2.8, 2017-07-25 SPP17N80C3 SPA17N80C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Final Data Sheet Page 11 11 2011-09-27 Rev. 2.8, 2017-07-25 SPP17N80 0C3 SPA17N80 0C3     Final Datta Sheet  Final Data Sheet 1 12 Rev. 2.2 2, 2016‐08‐0 04  Rev. 2.8, 2017-07-25 800VCoolMOSªC3PowerTransistor SPAl7N80C3 RevisionHistory SPAl7N80C3 Revision:2017-07-27,Rev.2.8 Previous Revision Revision Date Subjects (major changes since last revision) 2.8 2017-07-27 Revised package drawing on page 12 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.8,2017-07-27