SPD14N06S2-80

SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS(on) 80 mΩ ID 17 A • 175°C operating temperature • Avalanche rated P- TO252 -3-11 • dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423 Marking 2N0680 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A 17 TC=25°C 12 ID puls 68 EAS 43 Repetitive avalanche energy, limited by Tjmax 1) EAR 3 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 30 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=14A, V DD=25V, RGS=25Ω kV/µs IS=14A, V DS=44V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD14N06S2-80 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 2.14 3.2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=14µA Zero gate voltage drain current µA IDSS V DS=55V, VGS=0V, Tj=25°C - 0.01 1 V DS=55V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 53 80 mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=7A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD14N06S2-80 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 5.2 10.4 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, ID =12A Input capacitance Ciss VGS =0V, VDS =25V, - 302 400 Output capacitance Coss f=1MHz - 78 104 Reverse transfer capacitance Crss - 26 38 Turn-on delay time td(on) VDD =30V, VGS =10V, - 7 11 Rise time tr ID =14A, - 28 42 Turn-off delay time td(off) RG =39Ω - 22 33 Fall time tf - 27 40 - 1.6 2 - 3 5 - 8 10 V(plateau) VDD =44V, ID =14A - 5.5 - V IS - - 17 A - - 68 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =44V, ID =14A VDD =44V, ID =14A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =14A - 0.9 1.3 V Reverse recovery time trr VR =30V, IF =lS , - 25 31 ns Reverse recovery charge Qrr diF /dt=100A/µs - 35 44 nC Page 3 2003-05-09 SPD14N06S2-80 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPD14N06S2-80 32 SPD14N06S2-80 18 A W 14 12 ID P tot 24 20 10 16 8 12 6 8 4 4 2 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T V 2 SPD14N06S2-80 10 t = 4.6µs p R A 10 µs Z thJC 10 10 1 ID 100 µs 0 10 -1 10 -2 D = 0.50 1 ms 10 1 SPD14N06S2-80 K/W DS (on ) = 10 DS / 3 Safe operating area 0.20 0 0.10 single pulse 10 0.05 0.02 -3 0.01 10 -1 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPD14N06S2-80 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS 35 220 Vgs = 10V Vgs = 8V A Vgs = 7V Vgs = 5.5V Vgs = 6V 180 25 ID 160 20 140 Vgs = 6V 120 15 Vgs = 5.5V 100 Vgs = 7V Vgs = 8V Vgs = 10V 10 80 Vgs = 5V 5 60 Vgs=4.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 40 V 5 VDS 4 4 6 8 10 12 14 16 18 20 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 28 11 A S 24 24 9 22 8 g fs ID 20 18 16 7 6 14 5 12 10 4 8 3 6 2 4 1 2 0 0 1 2 3 4 5 6 V 8 VGS Page 5 0 0 2 4 6 8 A 11 ID 2003-05-09 SPD14N06S2-80 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 7 A, V GS = 10 V parameter: VGS = VDS SPD14N06S2-80 280 4 mΩ V 240 80 µA V GS(th) R DS(on) 220 200 180 3 16 µA 2.5 160 140 2 120 1.5 98% 100 80 1 60 typ 40 0.5 20 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 3 10 2 SPD14N06S2-80 A Ciss C Coss 10 10 1 10 0 IF pF 2 Crss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 1 0 10 5 10 15 20 V 30 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD V DS Page 6 2003-05-09 SPD14N06S2-80 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D=14A, VDD = 25 V, RGS = 25 Ω parameter: ID = 17 A pulsed 45 mJ V 35 12 VGS E AS SPD14N06S2-80 16 30 0,2 VDS max 10 0,8 VDS max 25 8 20 6 15 4 10 2 5 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 2 4 6 8 10 nC 13 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 SPD14N06S2-80 V(BR)DSS V 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPD14N06S2-80 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD14N06S2-80, for simplicity the device is referred to by the term SPD14N06S2-80 throughout this documentation. Page 8 2003-05-09