SPD50N03S207GBTMA1

SPD50N03S2-07 G OptiMOS&!Power-Transistor Product Summary VDS 30 V Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) RDS(on) 7.3 m" ID 50 A Ph-TO252-3 %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated ´ U g2kwj j qj fi uqfyn sl@W tM X htruqn fsy Type Package SPD50N03S2-07 L Ph-TO252-3 Marking PN0307 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) Value Unit A ID 50 TC=25°C 50 ID puls 200 EAS 250 Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 136 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=50 A , V DD=25V, RGS=25" kV/µs IS=50A, VDS=24V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 QS-0Z-2008 SPD50N03S2-07 G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.7 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 3) - - 50 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=85µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 5.7 7.3 m" Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=50A 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 QS-0Z-2008 SPD50N03S2-07 G Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 30 60 - Dynamic Characteristics Transconductance gfs VDS $2*ID *RDS(on)max, S ID =50A Input capacitance Ciss VGS =0V, VDS =25V, - 1630 2170 pF Output capacitance Coss f=1MHz - 750 1000 Reverse transfer capacitance Crss - 150 230 Turn-on delay time td(on) VDD =15V, VGS =10V, - 14 21 Rise time tr ID =50A, - 36 54 Turn-off delay time td(off) RG =6.8" - 27 40 Fall time tf - 25 38 - 7.9 10.5 - 14.1 21.1 - 35 46.5 V (plateau) VDD =24V, ID =50A - 5.2 - V IS - - 50 A - - 200 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =50A VDD =24V, ID =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=50A - 0.9 1.3 V Reverse recovery time trr V R=15V, I F=lS, - 41 51 ns Reverse recovery charge Qrr diF/dt=100A/µs - 46 58 nC Page 3 QS-0Z-2008 SPD50N03S2-07 G 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS$ 6 V parameter: VGS$ 10 V SPD50N03S2-07 W A 45 120 110 40 100 ID P tot SPD50N03S2-07 55 150 90 35 80 30 70 25 60 20 50 40 15 30 10 20 5 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPD50N03S2-07 10 1 SPD50N03S2-07 K/W A 10 t = 7.6µs p 0 2 ID 10 Z thJC 10 µs 10 -1 10 -2 100 µs D = 0.50 10 0.20 1 ms 1 0.10 0.05 10 single pulse -3 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 QS-0Z-2008 SPD50N03S2-07 G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C parameter: tp = 80 µs RDS(on) = f (I D) parameter: VGS SPD50N03S2-07 120 SPD50N03S2-07 24 Ptot = 136W A m" V [V] GS a 100 90 80 ID h 70 g 60 50 4.5 c 4.8 d 5.0 e 5.2 f 5.5 g 5.8 h 6.0 i 10.0 e f g h 20 4.2 b R DS(on) i 18 16 14 12 10 f 40 8 e 30 20 6 i 4 d VGS [V] = c 10 a 0 0 1 2 3 e 5.2 2 b g 5.8 h i 6.0 10.0 0 V 4 f 5.5 5.5 0 10 20 30 40 50 60 70 80 A 100 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS$ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 100 80 A S 80 60 g fs ID 70 60 50 50 40 40 30 30 20 20 10 10 0 0 1 2 3 4 5 V 6.5 VGS Page 5 0 0 20 40 60 80 A 120 ID QS-0Z-2008 SPD50N03S2-07 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 50 A, VGS = 10 V parameter: VGS = VDS SPD50N03S2-07 17 4 m" V 415 #A V GS(th) R DS(on) 14 12 3 83 #A 2.5 10 98% 2 8 1.5 typ 6 4 1 2 0.5 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPD50N03S2-07 A pF 10 2 10 1 C IF Ciss 10 Coss 3 T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 QS-0Z-2008 SPD50N03S2-07 G 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 50 A , V DD = 25 V, R GS = 25 " parameter: ID = 50 A pulsed 260 SPD50N03S2-07 16 mJ V 220 12 180 VGS E AS 200 160 0,2 VDS max 10 0,8 VDS max 140 8 120 100 6 80 4 60 40 2 20 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 nC 55 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPD50N03S2-07 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 QS-0Z-2008 SPD50N03S2-07 G Package outline: PG-TO252-3 Page 8 QS-0Z-2008 SPD50N03S2-07 G Page 9 QS-0Z-2008