SPN03N60C3

SPN03N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 1.4 Ω ID 0.7 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 3 2 1 Type Package Ordering Code SPN03N60C3 SOT-223 Q67040S4552 VPS05163 Marking 03N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TA = 25 °C 0.7 TA = 70 °C 0.4 Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls Unit 3 Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 Gate source voltage static VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TA = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C Rev. 2.1 Page 1 V 2005-02-21 SPN03N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. - 25 - @ min. footprint - 110 - @ 6 cm2 cooling area 1) - - 70 Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=3.2A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=135µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.1 RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 70 VGS=30V, VDS=0V - - 100 Ω VGS=10V, ID=2A, Tj=25°C - 1.26 1.4 Tj=150°C - 3.8 - f=1MHz, open Drain - 10 - Page 2 nA 2005-02-21 SPN03N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 3.4 - S pF ID=0.4A Input capacitance Ciss V GS=0V, V DS=25V, - 400 - Output capacitance Coss f=1MHz - 150 - Reverse transfer capacitance Crss - 5 - - 12 - - 26 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 7 - Rise time tr ID=0.7A, RG=20Ω - 3 - Turn-off delay time td(off) - 64 100 Fall time tf - 12 20 - 2 - - 6 - - 13 17 - 5.5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=420V, ID=0.7A VDD=420V, ID=0.7A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=420V, ID=0.7A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 Page 3 2005-02-21 SPN03N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Inverse diode continuous Symbol IS Conditions TA =25°C Values Unit min. typ. max. - - 0.7 - - 3 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=420V, IF=IS , - 250 400 ns Reverse recovery charge Qrr diF/dt=100A/µs - 1.8 - µC Peak reverse recovery current Irrm - 15 - A Peak rate of fall of reverse dirr /dt - - 540 A/µs recovery current Rev. 2.1 Page 4 2005-02-21 SPN03N60C3 1 Power dissipation 2 Safe operating area Ptot = f (TA) ID = f ( V DS ) parameter : D = 0 , TA=25°C 1.9 10 1 SPN03N60C3 W A 1.6 10 0 1.2 ID Ptot 1.4 1 10 -1 0.8 0.6 10 -2 0.4 0.2 0 0 20 40 60 80 100 °C 120 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -3 0 10 160 10 1 10 2 10 V VDS TA 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 2 10 11 K/W A 10 1 9 ID Z thJC 8 10 0 10 -2 10 -3 6 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 7 20V 7V 6.5V 6V 5.5V 5V 4.5V 4V 5 4 3 2 1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp Rev. 2.1 0 0 4 8 12 16 V 24 VDS Page 5 2005-02-21 3 SPN03N60C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 10 6 4V 4.5V 5V 5.5V 6V 6.5V 8V 20V 8 RDS(on) 4 ID Ω 20V 7V 6V 5.5V 5V 4.5V 4V 3.5V A 7 6 3 5 4 2 3 1 2 0 0 4 8 12 V 16 1 0 24 1 2 3 4 5 A ID 6 VDS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 0.4 A, VGS = 10 V parameter: tp = 10 µs 8 SPN03N60C3 8 11 A Ω 25°C 8 ID RDS(on) 9 6 5 7 150°C 6 4 5 3 4 2 3 98% 2 typ 1 0 -60 1 -20 20 60 100 °C 0 0 180 Tj Rev. 2.1 Page 6 2 4 6 8 10 12 14 16 V 20 VGS 2005-02-21 SPN03N60C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 0.7 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPN03N60C3 V SPN03N60C3 A 10 0 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 2 4 6 8 10 12 14 16 nC 10 -2 0 20 0.4 0.8 1.2 1.6 2 2.4 V QGate 11 Typ. drain current slope 12 Typ. switching time di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C par.: VDS=380V, VGS=0/+13V, ID=0.7A par.: V DS=380V, VGS=0/+13V, ID=0.7 A 1500 500 A/µs ns 1200 400 1050 350 900 300 t di/dt 3 VSD 750 250 600 200 450 td(off) tf td(on) tr 150 di/dt(on) 300 100 150 0 0 Rev. 2.1 50 di/dt(off) 40 80 120 160 0 0 220 Ω RG Page 7 20 40 60 80 100 120 140 160 Ω 200 RG 2005-02-21 SPN03N60C3 13 Typ. switching time 14 Typ. drain source voltage slope t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, RG =20Ω par.: V DS=380V, VGS=0/+13V, ID=0.7A 100 90 ns V/ns 80 70 dv/dt t 70 60 60 50 50 40 40 td(off) tf td(on) tr 30 dv/dt(on) 30 20 20 dv/dt(off) 10 10 0 0 0.5 1 1.5 2 2.5 A 0 0 3.5 20 40 60 80 100 120 140 160 ID Ω 200 RG 15 Typ. switching losses 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG =20Ω par.: V DS=380V, VGS=0/+13V, ID=0.7A 0.01 mWs 0.06 *) Eon includes SDP06S60 mWs diode commutation losses. *) E on includes SDP06S60 diode commutation losses. 0.008 0.048 0.007 0.042 Eon* 0.006 E E Eoff 0.036 Eon* 0.005 0.03 Eoff 0.004 0.024 0.003 0.018 0.002 0.012 0.001 0.006 0 0 0.5 1 1.5 2 2.5 A 0 0 3.5 ID Rev. 2.1 Page 8 40 80 120 160 220 Ω RG 2005-02-21 SPN03N60C3 17 Drain-source breakdown voltage 18 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) parameter: V GS=0V, f=1 MHz 720 10 4 SPN03N60C3 pF 680 10 3 Ciss 660 C V(BR)DSS V 640 10 2 620 Coss 600 10 1 580 560 540 -60 Crss -20 20 60 100 °C 180 10 0 0 100 200 300 400 V 600 VDS Tj 19 Typ. Coss stored energy Eoss=f(VDS) 2.5 Eoss µJ 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Rev. 2.1 Page 9 2005-02-21 SPN03N60C3 Definition of diodes switching characteristics Rev. 2.1 Page 10 2005-02-21 SPN03N60C3 SOT-223 Rev. 2.1 Page 11 2005-02-21 SPN03N60C3 Published by Infineon Technologies AG, 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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