SPP12N50C3XKSA1

SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 2 3 1 23 P-TO220-3-31 P-TO220-3-1 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code SPP12N50C3 PG-TO220 Q67040-S4579 Marking 12N50C3 SPI12N50C3 PG-TO262 Q67040-S4578 12N50C3 SPA12N50C3 PG-TO220FP SP000216322 12N50C3 Maximum Ratings SPP_I Continuous drain current Unit Value Symbol Parameter SPA A ID TC = 25 °C 11.6 11.6 1) TC = 100 °C 7 71) ID puls 34.8 34.8 A EAS 340 340 mJ EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11.6 11.6 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 Operating and storage temperature Reverse diode dv/dt 7) T j , Tstg dv/dt Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V Rev. 3.1 Page 1 -55...+150 15 W °C V/ns 2009-11-30 SPP12N50C3 SPI12N50C3, SPA12N50C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 11.6 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at T j=25°C unless otherwise specified Symbol Conditions Parameter Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=11.6A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=500µA, VGS=VDS Zero gate voltage drain current I DSS VDS=500V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.1 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=7A Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open drain - 1.4 - Page 2 nA 2009-11-30 SPP12N50C3 SPI12N50C3, SPA12N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 8 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1200 - Output capacitance Coss f=1MHz - 400 - Reverse transfer capacitance Crss - 30 - - 45 - - 92 - Effective output capacitance,5) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance,6) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=11.6A, R G=6.8Ω - 8 - Turn-off delay time td(off) - 45 - Fall time tf - 8 - - 5 - - 26 - - 49 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=400V, ID=11.6A VDD=400V, ID=11.6A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=400V, ID=11.6A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 6C is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V . o(tr) DSS 7I