SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
OptiMOS Power-Transistor
Product Summary
Feature
• N-Channel
VDS
30
V
• Enhancement mode
RDS(on)
5.2
mΩ
• Logic Level
ID
80
A
• Excellent Gate Charge x RDS(on) P- TO262 -3-1
P- TO263 -3-2
P- TO220 -3-1
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
Package
Ordering Code
Marking
SPP80N03S2L-05
P- TO220 -3-1 Q67042-S4033
2N03L05
SPB80N03S2L-05
P- TO263 -3-2 Q67042-S4032
2N03L05
SPI80N03S2L-05
P- TO262 -3-1 Q67042-S4093
2N03L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
Value
Unit
A
ID
80
TC=25°C
80
I D puls
320
EAS
325
Repetitive avalanche energy, limited by Tjmax2)
EAR
16
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
167
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID=80 A , VDD=25V, RGS =25Ω
kV/µs
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
TC=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
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SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
0.6
0.9
@ min. footprint
-
-
62
@ 6 cm2 cooling area 3)
-
-
40
Characteristics
Thermal resistance, junction - case
RthJC
SMD version, device on PCB:
RthJA
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
V GS=0V, I D=1mA
Gate threshold voltage, VGS = VDS
ID=110µA
Zero gate voltage drain current
µA
I DSS
V DS=30V, V GS=0V, Tj=25°C
-
0.01
1
V DS=30V, V GS=0V, Tj=125°C
-
10
100
-
1
100
Gate-source leakage current
I GSS
nA
V GS=20V, VDS=0V
Drain-source on-state resistance
RDS(on)
mΩ
V GS=4.5V, ID=55A
-
5.6
7.5
V GS=4.5V, ID=55A, SMD version
-
5.2
7.2
V GS=10V, ID=55A
-
4
5.2
V GS=10V, ID=55A, SMD version
-
3.7
4.9
Drain-source on-state resistance4)
RDS(on)
1Current limited by bondwire ; with an R
thJC = 0.9K/W the chip is able to carry I D= 139A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
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SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
55
110
-
Dynamic Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
S
ID=80A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
2500
3320 pF
Output capacitance
Coss
f=1MHz
-
975
1300
Reverse transfer capacitance
Crss
-
215
325
Gate resistance
RG
-
1.75
-
Ω
Turn-on delay time
t d(on)
V DD=15V, VGS=10V,
-
10
15
ns
Rise time
tr
ID=20A,
-
18
27
Turn-off delay time
t d(off)
RG=2.7Ω
-
44
66
Fall time
tf
-
20
30
-
7.9
-
23.3
35
-
67.5
89.7
V(plateau) V DD=24V, ID=40A
-
3.2
-
V
IS
-
-
80
A
-
-
320
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
V DD=24V, ID=40A
V DD=24V, ID=40A,
10.5 nC
V GS=0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
VGS =0V, I F=80A
-
0.95
1.26 V
Reverse recovery time
trr
VR =15V, IF=lS,
-
46.5
58.1 ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
55.5
69.4 nC
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2003-01-17
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
1 Power dissipation
2 Drain current
Ptot = f (TC)
ID = f (TC)
parameter: V GS≥ 10 V
SPP80N03S2L-05
180
90
W
A
140
70
120
60
ID
P tot
SPP80N03S2L-05
100
50
80
40
60
30
40
20
20
10
0
0
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( V DS )
ZthJC = f (t p)
parameter : D = 0 , TC = 25 °C
parameter : D = t p/T
10
10 1
3 SPP80N03S2L-05
SPP80N03S2L-05
K/W
A
tp = 12.0µs
ZthJC
R
ID
10 2
DS
(on
)
=
V
DS
/I
D
10 0
100 µs
10 -1
D = 0.50
10
1 ms
10
-2
0.20
1
0.10
10 ms
0.05
DC
0.02
10 -3
0.01
single pulse
10 0 -1
10
10
0
10
1
V
10
2
VDS
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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2003-01-17
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=25°C
RDS(on) = f (ID)
parameter: tp = 80 µs
parameter: V GS
A
i
hgf
SPP80N03S2L-05
16
e
ID
160
b
3.0
140
c
3.5
d
4.0
120
d e
4.5
f
5.0
g
5.5
100
80
h
6.0
i
10.0
c
mΩ
VGS [V]
a
2.5
RDS(on)
190
SPP80N03S2L-05
Ptot = 167W
d
12
10
8
e
6
f
c
60
g
h
i
4
40
0
0
2
b
20
a
0.5
1
1.5
2
2.5
3
3.5
4
V
0
0
5
VGS [V] =
c
3.5
d
4.0
e
f
4.5 5.0
20
40
g
5.5
60
h
i
6.0 10.0
80
100
A
VDS
140
ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
g fs = f(ID); Tj=25°C
parameter: tp = 80 µs
parameter: gfs
250
140
A
S
200
100
ID
gfs
175
150
80
125
60
100
75
40
50
20
25
0
0
1
2
3
4
0
0
6
V
VGS
Page 5
25
50
75 100 125 150 175 200
A 250
ID
2003-01-17
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : ID = 55 A, VGS = 10 V
parameter: V GS = VDS
SPP80N03S2L-05
3
14
mΩ
V
12
V GS(th)
RDS(on)
11
10
9
2
0,855mA
8
1.5
7
98%
6
5
1
typ
110µA
4
3
0.5
2
1
0
-60
-20
20
60
100
°C
140
0
-60
200
-20
20
60
100
180
°C
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: V GS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
10 3
SPP80N03S2L-05
A
pF
Ciss
IF
C
10 2
Coss
10 3
10 1
Tj = 25 °C typ
Crss
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
0
5
10
15
20
30
V
VDS
10 0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
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2003-01-17
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj)
VGS = f (QGate )
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω
parameter: ID = 40 A pulsed
SPP80N03S2L-05
350
16
V
mJ
VGS
E AS
12
250
10
0,2 VDS max
200
0,8 VDS max
8
150
6
100
4
50
2
0
25
45
65
85
105
125
145
°C 185
Tj
0
0
20
40
60
80
nC
110
Q Gate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
SPP80N03S2L-05
36
V(BR)DSS
V
34
33
32
31
30
29
28
27
-60
-20
20
60
100
140
°C
200
Tj
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2003-01-17
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP80N03S2L-05, BSPB80N03S2L-05 and BSPI80N03S2L-05, for
simplicity the device is referred to by the term SPP80N03S2L-05, SPB80N03S2L-05 and SPI80N03S2L-05
throughout this documentation
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2003-01-17