TLE4209AHKLA1

DC Motor Driver for Servo Driver Applications 1 Overview 1.1 Features TLE 4209 • Optimized for headlight beam control applications • Delivers up to 0.8 A • Low saturation voltage; typ. 1.2 V total @ 25 °C; 0.4 A • Output protected against short circuit • Overtemperature protection with hysteresis • Over- and undervoltage lockout • No crossover current • Internal clamp diodes 1.2 Description The TLE 4209 is a fully protected H-Bridge Driver designed specifically for automotive headlight beam control and industrial servo control applications. The part is built using Infineons bipolar high voltage power technology DOPL. The device is available in a P-DIP-8-4 package. The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and angle-amplification are programmable with external resitors. An internal window-comparator controls the input line. In the case of a fault condition, like short circuit to GND, short circuit to supply-voltage, and broken wire, the TLE 4209 stops the motor immediately (brake condition). Furthermore the built in features like over- and undervoltage-lockout, short-circuitprotection and over-temperature-protection will open a wide range of automotive- and industrial applications. Type Package TLE 4209 P-DIP-8-4 Data Sheet 1 2000-09-05 TLE 4209 Overview 1.3 Pin Definitions and Functions Pin No. P-DIP-8-4 Symbol Function 1 FB Feedback Input 2 HYST Hysteresis I/O 3 OUT1 Power Output 1 4 VS Power Supply Voltage 5 OUT2 Power Output 2 6 GND Ground 7 RANGE Range Input 8 REF Reference Input P-DIP-8-4 Figure 1 Data Sheet Pin Configuration (top view) 2 2000-09-05 TLE 4209 Overview 1.4 Figure 2 Data Sheet Functional Block Diagram Block Diagram 3 2000-09-05 TLE 4209 Overview 1.5 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. – 0.3 45 V – –1 – V t < 0.5 s; IS > – 2 A – 0.3 20 V – – – A internally limited –1 1 A – –2 –6 2 6 mA mA t < 2 ms; t/T < 0.1 – 40 150 °C – – 50 150 °C – 100 K/W – Voltages Supply voltage Supply voltage Logic input voltages (FB, REF, RANGE, HYST) VS VS VI Currents Output current (OUT1, OUT2) IOUT Output current (Diode) Input current (FB, REF, RANGE, HYST) IOUT IIN Temperatures Junction temperature Storage temperature Tj Tstg Thermal Resistances Junction ambient (P-DIP-8-4) RthjA Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Data Sheet 4 2000-09-05 TLE 4209 Overview 1.6 Operating Range Parameter Symbol Limit Values min. max. Unit Remarks V After VS rising above VUV ON Supply voltage VS 8 18 Supply voltage increasing VS VS – 0.3 VUV ON V VUV OF V Supply voltage decreasing – 0.3 Outputs in tristate Outputs in tristate F Output current Input current (FB, REF) Junction temperature IOUT1-2 IIN Tj – 0.8 0.8 A – – 50 500 µA – – 40 150 °C – Note: In the operating range, the functions given in the circuit description are fulfilled. 1.7 Electrical Characteristics 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 12 20 mA – Supply current IS IS – 20 30 mA Supply current IS – 30 50 mA IOUT1 = 0.4 A IOUT2 = – 0.4 A IOUT1 = 0.8 A IOUT2 = – 0.8 A – 7.4 8 V 6.3 6.9 – V – 0.5 – V – 20.5 23 V 17.5 20 – V – 0.5 – V Current Consumption Supply current Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF Hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF Hysteresis Data Sheet VUV ON VUV OFF VUVHY VOV OFF VOV ON VOVHY 5 VS increasing VS decreasing VUV ON – VUV OFF VS increasing VS decreasing VOV OFF – VOV ON 2000-09-05 TLE 4209 Overview 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. Unit Test Condition Outputs OUT1-2 Saturation Voltages Source (upper) IOUT = – 0.2 A VSAT U – 0.85 1.15 V Tj = 25 °C Source (upper) IOUT = – 0.4 A VSAT U – 0.90 1.20 V Tj = 25 °C Sink (upper) IOUT = – 0.8 A VSAT U – 1.10 1.50 V Tj = 25 °C Sink (lower) IOUT = 0.2 A VSAT L – 0.15 0.23 V Tj = 25 °C Sink (lower) IOUT = 0.4 A VSAT L – 0.25 0.40 V Tj = 25 °C Sink (lower) IOUT = 0.8 A VSAT L – 0.45 0.75 V Tj = 25 °C VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L Total drop IOUT = 0.2 A VSAT – 1.0 1.4 V Total drop IOUT = 0.4 A VSAT – 1.2 1.7 V Total drop IOUT = 0.8 A VSAT – 1.6 2.5 V VFU ILKU VFL – 1.0 1.5 V 5 mA 1.4 V Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower Data Sheet – – 0.9 6 IF = 0.4 A IF = 0.4 A IF = 0.4 A 2000-09-05 TLE 4209 Overview 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. VREFq RREF – 200 240 mV 4.5 6.0 7.5 kΩ VFBq RFB – 200 240 mV 4.5 6.0 7.5 kΩ IFB = 0 µA 0 V < VFB < 0.5 V 0.35 3 µA IREF = IFB = Input-Interface Input REF Quiescent voltage Input resistance IREF = 0 µA 0 V < VREF < 0.5 V Input FB Quiescent voltage Input resistance Input/Output HYST Current Offset IHYSTIO – 2 250 IHYSTIO – 1.3 0 1.3 µA 40 − 250 µA VHYST = VS / 2 IREF = IFB = 40 µA VHYST = VS / 2 – 20 µA < IHYST Current Amplification AHYST AHYST = IHYST / (IREF – IFB) 0.8 Current Gain GHYST GHYST = (IHYST - IHYSTIO40) / (IREF – IFB) 0.8 0.95 1.1 - IHYST = +/- 2 µA; IREF = 40 µA; VHYST = VS / 2 VHYH / VS VDBH / VS 51 52 54 % – 50 50.4 51 % – Threshold voltage High Deadband voltage High Data Sheet 7 0.95 1.1 < – 10 µA; 10 µA < IHYST < 20 µA; IREF = 250 µA VHYST = VS / 2 2000-09-05 TLE 4209 Overview 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. VDBL / VS VHYL / VS VHYW / VS VDBW / VS 49 49.6 50 % – 46 48 49 % – 3.0 4.0 5.0 % (VHYH – VHYL)/ VS 0.4 0.8 1.2 % (VDBH – VDBL)/ VS Input current IRANGE –1 – 1 µA 0 V < VRANGE < VS Switch-OFF voltage High VOFFH VOFFL – 25 0 100 mV refer to VS 300 400 500 mV refer to GND Thermal shutdown junction temperature TjSD 150 175 200 °C – Thermal switch-on junction temperature TjSO 120 – 170 °C – Temperature hysteresis ∆T – 30 K – Deadband voltage Low Threshold voltage Low Hysteresis Window Deadband Window Input RANGE Switch-OFF voltage Low Thermal Shutdown Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. Data Sheet 8 2000-09-05 TLE 4209 Diagrams 2 Figure 3 Data Sheet Diagrams Application Circuit 9 2000-09-05 TLE 4209 Diagrams Figure 4 Data Sheet Hysteresis, Phaselag and Deadband-Definitions 10 2000-09-05 TLE 4209 Diagrams Figure 5 Data Sheet Timing and Phase-Lag 11 2000-09-05 TLE 4209 Package Outlines 3 Package Outlines P-DIP-8-4 (Plastic Dual In-line Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet 12 Dimensions in mm 2000-09-05