FA N 70 85 _F 08 5 H igh Side G a te Dr iv e r wit h Re c har ge F ET
March 2009
FAN7085_F085
Features
• Qualified to AEC Q100
High Side Gate Driver with Recharge FET
Description
The FAN7085_F085 is a high-side gate drive IC with reset input and built-in recharge FET. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 300V. Fairchild's high-voltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dV/dt noise circumstances. Logic input is compatible with standard CMOS outputs. The UVLO circuits prevent from malfunction when VCC and VBS are lower than the specified threshold voltage. It is available with space saving SOIC-8 Package. Minimum source and sink current capability of output driver is 250mA and 250mA. Built-in recharge FET to refresh bootstrap circuit is very useful for circuit topology requiring switches on low and high side of load.
• Floating channel designed for bootstrap operation fully operational up to 300V. • • Tolerance to negative transient voltageon VS pin dv/dt immune.
• Gate drive supply range from 4.5V to 20V • Under-voltage lockout • CMOS Schmitt-triggered inputs with pull-down and pull-up • High side output out of phase with input (Inverted input) • Reset input • Internal recharge FET for bootstrap refresh
SOIC-8
Typical Applications
• Diesel and gasoline injectors/valves • MOSFET-and IGBT high side driver applications
Ordering Information
Device
FAN7085CM FAN7085CMX X : Tape & Reel type
Package
SOIC-8 SOIC-8
Operating Temp.
-40 ° C ~ 125 ° C -40 ° C ~ 125 ° C
© 2008 Fairchild Semiconductor Corporation
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FAN7085_F085 Rev. 1.0.3
FA N 70 85 _F 08 5 H igh Side G a te Dr iv e r wit h Re c har ge F ET
Block Diagrams
VB
Under Voltage Reset VB to VS Pulse Filter Flip Flop Brake before make
HO VS
VCC
Under Voltage Reset VCC to GND
RESET-
INGND
Logic Pulse Filter
Level Shifter ON Delay Level Shifter OFF
Pin Assignments
1 2 3 4
VCC INGND
VB HO NC
8 7 6 5
RESET- VS
Pin Definitions
Pine Number
1 2 3 4 5 6 7 8
Pin Name
VCC INGND RESETVS NC HO VB
I/O
P I P I P A P
Pin Function Description
Driver supply voltage, typically 5V Driver control signal input (Negative Logic) Ground Driver enable input signal (Negative Logic) High side floating offset for MOSFET Source connection No connection (No Bond wire) High side drive output for MOSFET Gate connection Driver output stage supply
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Recharg e Path
FA N 70 85 _F 08 5 H igh Side G a te Dr iv e r wit h Re c har ge F ET
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to GND.
Parameter
High side floating supply voltage High side driver output stage voltage
Neg. transient: 0.5 ms, external MOSFET off
Symbol
VBS VB Vs VH O VC C VIN VRES Pd
1)
Min.
-0.3 -5 -25 VS-0.3 -0.3 -0.3 -0.3
Max.
25 325 300 VB+0.3 25 Vcc+0.3 Vcc+0.3 0.625 200
Unit
V V V V V V V W ° C/W V V
High side floating supply offset voltage
Neg. transient 0.2 us
High side floating output voltage Supply voltage Input voltage for INInput voltage for RESETPower Dissipation
1)
Thermal resistance, junction to ambient Electrostatic discharge voltage (Human Body Model) Charge device model Junction Temperature Storage Temperature
Rthja VESD VCDM Tj TS -55 1.5K 500
150 150
°C °C
Note: 1) The thermal resistance and power dissipation rating are measured bellow conditions; JESD51-2: Integrated Circuit Thermal Test Method Environmental Conditions - Natural condition(StillAir) JESD51-3: Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.-40°C 6.5V VBS: 6.5V->2.4V or 2.4V->6.5V VB=VS=300V Vcc =20V Static mode, VBS =7V, VIN =0 or 5V Static mode, VBS =16V, VIN =0 or 5V VBS =7V, Cbs=1uF, tdIG-IN =3uS, t T E S T=100uS
Min.
2.8 0.02 0.5 0.5 -
Typ.
3.7 3.4 0.3
Max.
4.3 20 20
Unit
V V V us us uA uA uA uA mV
-
200 500 100 200 210
VIH VIL IINIIN+ R IN VRH VR L IR E S + IR E S RR E S VR E S E T =5V VR E S E T =0 VIN =0 VIN =5V
0.6VC C 5 83 0.6Vcc
25 200 -
0.28VC C 60 5 1000 0.28Vcc
V V uA uA ΚΩ V V uA uA ΚΩ
5
25
60 5
83
200
1000
VO H VOL IO + IOR OP RO N
I O =0 I O =0 VIN =5V VIN =0
250 250
450 450 15.5 15.5
0.1 0.1 28 28
V V mA mA Ω Ω
Recharge Characteristics Recharge TR turn-on propagation delay Recharge TR turn-off propagation delay Recharge TR on-state voltage drop Dead Time Characteristics High side turn-off to recharge gate turn-on Recharge gate turn-off to high side turn-on DTHOFF DTHON Vcc=5V, VS =7V Vcc=5V, VS =7V 4 0.1 7.8 0.4 9.8 0.7 us us T on_rech T off_rech VR E C H Is=1mA, VIN=5V @125° C 4 7.9 0.2 9.8 0.4 1.2 us us V
Note: The input parameter are referenced to GND. The VO and IO parameters are referenced to GND.
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Dynamic Electrical Characteristics
Unless otherwise specified, -40°C VCCUVLO+ > VCCUVLO+
Notes: X means independent from signal IN-=LOW indicates that the high side NMOS is ON IN-=HIGH indicates that the high side NMOS is OFF RechFET =ON indicates that the recharge MOSFET is ON RechFET =OFF indicates that the recharge MOSFET is OFF
VBS
X X X > VBSUVLO+ < VBSUVLO-
RESETX LOW X HIGH HIGH
INX X HIGH LOW LOW
Ho
OFF OFF OFF ON OFF
RechFET
ON ON ON OFF OFF
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Typical Application Circuit
1. Typical Application Circuit
D1 VCC
VCC INGND RESETVB HO NC VS
Up to 300V
R1 C2 R2 Load C3
C1
2. Application Example
From Charge Pump
D5
Voltage Source
5V
VCC INGND RESETVB HO NC VS
R1 S1 C3 R2
C2
C1
D3 R3 From LS Driver C4 R4 S2 D4
Load
GND
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Input-Output Waveforms
1. Input/Output Timing Diagrams
IN-
RESET-
90%
90%
VS
10% tr tf 10 %
VHO Recharge
tplh
tphl
Toff _rech
T on_rech
Figure.1 Input and Output Timing Diagram and Switching Time Waveform Definition
2. Reset Timing Diagrams
IN-
RESET-
VHO
tplh _res
tphl_res
Figure.2 Reset and Output Timing Diagram
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3.VB Drop Voltage Diagram
Ig
INIg VCC VB HO NC 50R 1u
RESET-
INGND
RESET- VS
7V
2n5
VB-VS
VB drop
Figure3.b VB Drop Voltage Test Circuit
Brake before make
Figure3.a VB Drop Voltage Diagram
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Performance Graphs
T his performance graphs based on ambient temperature -40 ° C ~ 1 2 5 °C
3.2
VBS=7V, RL=50, CL=2.5nF
2.6
VBS=7V, RL=50, CL=2.5nF
3.0
2.4
Vinth+ (V)
2.8
Vinth- (V)
2.2
2.6
2.0 2.4
Typ. Typ.
2.2
1.8 4.4 4.7 5.0 5.3 5.6 5.9 6.2 6.5
4.4
4.7
5.0
5.3
5.6
5.9
6.2
6.5
Vsupply (V)
Figure 4a. Positive IN and RESET Threshold vs VCC Supply
Vsupply (V)
Figure 4b. Negative IN and RESET Threshold vs VCC Supply
2000
500
Output Source Cureent (mA)
VCC=5V, RL=50, CL=2.5nF
VCC=5V,VBS=7V, RL=50, CL=2.5nF
Typ.
Output Sink Cureent (mA)
1600
-40oC
450
1200
125 C
o
400
800
350
400
0 5 10 15 20
300 -50
0
50
100
o
150
VBS(V)
Temperature ( C)
Figure5a. Output Sink Current vs VBS Supply
Figure5b. Output Source Current vs Tempearature
650
250
VCC=5V,VBS=7V, RL=50, CL=2.5nF
Turn-on Propagation Delay (ns)
Turn-off Propagation Delay (ns)
VCC=5V,VBS=7V, RL=50, CL=2.5nF
620
200
590
560
Typ.
150
Typ.
530
500 -50
0
50
100
o
150
100 -50
0
50
100
o
150
Temperature( C)
Figure 6a. Turn-On Propagation Delay Time vs Temperature
Temperature ( C)
Figure 6b. Turn-Off Propagation Delay Time vs Temperature
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FA N 70 85 _F 08 5 H igh Side G a te Dr iv e r wit h Re c har ge F ET
700
VCC=5V, VBS=7V, RL=50, CL=2.5nF
RES-to-Output Turn-off Propagation Delay (ns)
RES-to-Output Turn-on Propagation Delay (ns)
250
VCC=5V, VBS=7V, RL=50, CL=2.5nF
650
200
600
150
Typ.
550
Typ.
500 -50
0
50
100
o
150
100 -50
0
50
100
o
150
Temperature ( C)
Temperature ( C)
Figure 7a. RES to Output Turn-On Propagation Delay vs Temperature
Figure 7b. RES to Output Turn-Off Propagation Delay vs Temperature
50
50
Logic "1" RES Input Current ( uA)
VCC=5V, RL=50, CL=2.5nF
VCC=5V, RL=50, CL=2.5nF
Logic "0" Input Current ( uA)
40
Typ.
40
30
30
Typ.
20
20
10
10
0 -50
0
50
100
o
150
0 -50
0
50
100
o
150
Temperature ( C)
Figure 8. Logic “0” IN Input Current vs Temperature
Temperature ( C)
Figure 9. Logic “1” RESET Input Current vs Temperature
5.0 4.5
5.0 4.5
Max.
VBS Supply Voltage(V)
VBS Supply Voltage(V)
4.0
Typ.
4.0 3.5 3.0
Max.
3.5 3.0 2.5 2.0 -50
Min.
Typ.
Min.
2.5 2.0 -50
0
50
100
o
150
0
50
100
o
150
Temperature( C)
Temperature( C)
Figure 10a. VBS Under Voltage Threshold(+) vs Temperature
Figure 10b. VBS Under Voltage Threshold(-) vs Temperature
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5.0 4.5
5.0 4.5
Max.
VC C Supply Voltage(V)
4.0
Typ.
VC C Supply Voltage(V)
4.0 3.5
Max.
3.5 3.0 2.5 2.0 -50
Min.
Typ.
3.0
Min.
2.5 2.0 -50
0
50
100
o
150
0
50
100
o
150
Temperature( C)
Temperature( C)
Figure 11a. VCC Under Voltage Threshold(+) vs Temperature
Figure 11b. VCC Under Voltage Threshold(-) vs Temperature
Recharge Transistor Turn-on Propagation Delay (us)
Recharge Gate Turn-off Propagation Delay (ns)
10
VCC=5v, VBS=7VRL=50, CL=2.5nF
300
VBS=7V VCC=5v, VBS=7VRL=50, CL=2.5nF
260
8
Typ.
220
6
180
Typ.
4 -50
0
50
100
o
150
140 -50
0
50
100
o
150
Temperature( C)
Figure 12. Recharge FET Turn-on Delay time
Temperature ( C)
Figure 12. Recharge FET Turn-off Delay time
VCC=5v, VBS=7VRL=50, CL=2.5nF
High Side Turn-off to Recharge Gate Turn-on (us)
1.8
10
VCC=5v, VBS=7VRL=50, CL=2.5nF
1.4
8
Typ.
I ( mA)
1.0
6
0.6
Typ.
0.2 0.4
0.6
0.8
1.0
1.2
4 -50
0
50
100
o
150
V (V)
Temperature ( C)
Figure 14. Recharge FET I-V curve
Figure 15. High Side Turn-off to Recharge FET turn-on VS Temperature
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Package Dimensions
13
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FAN7085_F085 Rev. 1.0.3
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Rev. I39
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