FAN7085M-GF085

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. High Side Gate Driver with Recharge FET Features Description • Qualified to AEC Q100 The FAN7085-GF085 is a high-side gate drive IC with reset input and built-in recharge FET. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 300V. ON Semiconductor's high-voltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dV/dt noise circumstances. Logic input is compatible with standard CMOS outputs. The UVLO cir-cuits prevent from malfunction when VCC and VBS are lower than the specified threshold voltage. It is available with space saving SOIC-8 Package. Minimum source and sink current capability of output driver is 250mA and 250mA. Built-in recharge FET to refresh bootstrap circuit is very useful for circuit topology requiring switches on low and high side of load. • Floating channel designed for bootstrap operation fully operational up to 300V. • Tolerance to negative transient voltage on VS pin • dv/dt immune. • Gate drive supply range from 4.5V to 20V • Under-voltage lockout • CMOS Schmitt-triggered inputs with pull-down and pull-up • High side output out of phase with input (Inverted input) • Reset input • Internal recharge FET for bootstrap refresh SOIC-8 Typical Applications • Diesel and gasoline injectors/valves • MOSFET-and IGBT high side driver applications  Ordering Information Device Package Operating Temp. SOIC-8 -40 C ~ 125 C FAN7085MX-GF085 SOIC-8 -40 C ~ 125 C FAN7085M-GF085 X : Tape & Reel type ©2012 Semiconductor Components Industries, LLC. September-2017,Rev.2 Publication Order Number: FAN7085M-GF085/D FAN7085-GF085 High Side Gate Driver with Recharge FET FAN7085-GF085 VB Under Voltage Reset VB to VS Pulse Filter Flip Flop Brake before make HO Under Voltage Reset VCC to GND RESET- VS Level Shifter ON Logic Pulse Filter IN- Delay Level Shifter OFF GND Pin Assignments 1 2 3 4 VCC VB IN HO GND NC RESET VS 8 7 6 5 Pin Definitions Pin Number Pin Name I/O Pin Function Description 1 VCC P Driver supply voltage, typically 5V 2 IN- I Driver control signal input (Negative Logic) 3 GND P Ground 4 RESET- I Driver enable input signal (Negative Logic) 5 VS P High side floating offset for MOSFET Source connection 6 NC - No connection (No Bond wire) 7 HO A High side drive output for MOSFET Gate connection 8 VB P Driver output stage supply www.onsemi.com 2 Recharge Path VCC FAN7085-GF085 High Side Gate Driver with Recharge FET Block Diagrams Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to GND. Parameter Symbol Min. Max. Unit High side floating supply voltage VBS -0.3 25 V High side driver output stage voltage VB -5 325 V Vs -25 300 V High side floating output voltage VHO VS-0.3 VB+0.3 V Supply voltage VCC -0.3 25 V VIN -0.3 Vcc+0.3 V VRES -0.3 Vcc+0.3 V Neg. transient: 0.5 ms, external MOSFET off High side floating supply offset voltage Neg. transient 0.2 us Input voltage for INInput voltage for RESET1) Pd 0.625 W Thermal resistance, junction to ambient 1) Rthja 200 C/W Electrostatic discharge voltage (Human Body Model) VESD 1.5K Charge device model VCDM 500 Junction Temperature Tj Storage Temperature TS Power Dissipation V V -55 150 C 150 C Note: 1) The thermal resistance and power dissipation rating are measured bellow conditions; JESD51-2: Integrated Circuit Thermal Test Method Environmental Conditions - Natural condition(StillAir) JESD51-3: Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package Recommended Operating Conditions For proper operation the device should be used within the recommended conditions.-40°C 6.5V 0.5 0.5 20 20 us us ILK VB=VS=300V - - 200 uA - - VCC and VBS Supply Characteristics Under voltage lockout response time Offset supply leakage current Quiescent Vcc supply current IQCC Vcc=20V 500 uA Quiescent VBS supply current IQBS1 Static mode, VBS=7V, VIN=0 or 5V 100 uA Quiescent VBS supply current IQBS2 Static mode, VBS=16V, VIN=0 or 5V 200 uA VBS drop due to output turn-on (Design guaranty) VBS VBS=7V, Cbs=1uF, tdIG-IN =3uS, tTEST=100uS 210 mV Input Characteristics High logic level input voltage for IN- VIH 0.6VCC - - V Low logic level input voltage for IN- VIL - - 0.28VCC V Low logic level input bias current for IN- IIN- VIN=0 5 25 60 uA High logic level input bias current for IN- IIN+ VIN=5V - - 5 uA Full up resistance at IN RIN 83 200 1000  High logic level input voltage for RESET- VRH 0.6Vcc - - V 0.28Vcc V 5 25 60 uA 5 uA 83 200 1000  - - 0.1 V Low logic level input voltage for RESET- VRL High logic level input current for RESET- IRES+ VRESET=5V Low logic level input bias current for RESET- IRES- VRESET=0 Full down resistance at RESET- RRES Output characteristics High level output voltage, VB - VHO VOH Low level output voltage, VHO-GND VOL IO=0 - - 0.1 V Peak output source current IO+ VIN=5V 250 450 - mA IO- VIN=0 250 Peak output sink current Equivalent output resistance IO=0 450 - mA ROP 15.5 28  RON 15.5 28  7.9 9.8 us 0.2 0.4 us 1.2 V Recharge Characteristics Recharge TR turn-on propagation delay Ton_rech Recharge TR turn-off propagation delay Toff_rech Recharge TR on-state voltage drop VRECH Is=1mA, VIN=5V @125C High side turn-off to recharge gate turn-on DTHOFF Vcc=5V, VS=7V 4 7.8 9.8 us Recharge gate turn-off to high side turn-on DTHON Vcc=5V, VS=7V 0.1 0.4 0.7 us 4 Dead Time Characteristics Note: The input parameter are referenced to GND. The VO and IO parameters are referenced to GND. www.onsemi.com 4 FAN7085-GF085 High Side Gate Driver with Recharge FET Statics Electrical Characteristics Unless otherwise specified, -40°C VBSUVLO+ HIGH LOW ON OFF > VCCUVLO+ < VBSUVLO- HIGH LOW OFF OFF Notes: X means independent from signal IN-=LOW indicates that the high side NMOS is ON IN-=HIGH indicates that the high side NMOS is OFF RechFET =ON indicates that the recharge MOSFET is ON RechFET =OFF indicates that the recharge MOSFET is OFF www.onsemi.com 6 FAN7085-GF085 High Side Gate Driver with Recharge FET Application Information FAN7085-GF085 High Side Gate Driver with Recharge FET Typical Application Circuit 1. Typical Application Circuit Up to 300V D1 VCC VCC VB IN- HO GND NC RESET- VS R1 C3 R2 C2 Load C1 2. Application Example From Charge Pump Voltage Source D5 5V C2 VCC VB IN- HO GND NC RESET- VS R1 S1 C3 R2 C1 Load D3 R3 From LS Driver C4 S2 D4 R4 GND www.onsemi.com 7 1. Input/Output Timing Diagrams IN- RESET- 90% 90% VS 10% 10% tr VHO tf tphl Recharge tplh Toff_rech Ton_rech Figure.1 Input and Output Timing Diagram and Switching Time Waveform Definition 2. Reset Timing Diagrams IN- RESET- VHO tplh_res tphl_res Figure.2 Reset and Output Timing Diagram www.onsemi.com 8 FAN7085-GF085 High Side Gate Driver with Recharge FET Input-Output Waveforms Ig INIg RESET- 7V VCC VB IN- HO GND NC RESET- VS 50R VB drop VB-VS 1u 2n5 Brake before make Figure3.b VB Drop Voltage Test Circuit Figure3.a VB Drop Voltage Diagram 4.Recommendation Min. Short Pulse Width Bat2 Bat1 1 2 3 4 VCC VB RESET HO IN N.C COM VS 8 7 6 Tpulse =560nS 0.1uF IN 5 60% FAN7085 Figure 4a.Short Pulse Width Test Circuit and Pulse Width Waveform 142KHz Less than 430nS Pulse Width IN HO Abnormal Output Figure 4b. Abnormal Output Waveform with short pulse width 142KHz Recommended pulse width 560nS IN HO Figure 4c. Recommendation of pulse width Output Waveform www.onsemi.com 9 28% FAN7085-GF085 High Side Gate Driver with Recharge FET 3.VB Drop Voltage Diagram This performance graphs based on ambient temperature -40C ~125C 2.6 3.2 VBS=7V, RL=50, CL=2.5nF VBS=7V, RL=50, CL=2.5nF 2.4 2.8 Vinth- (V) Vinth+ (V) 3.0 2.6 2.2 2.0 2.4 Typ. Typ. 2.2 4.4 4.7 5.0 5.3 5.6 5.9 6.2 1.8 4.4 6.5 4.7 5.0 Figure 5a. Positive IN and RESET Threshold vs VCC Supply 1600 Output Source Cureent (mA) Output Sink Cureent (mA) 5.9 6.2 6.5 500 VCC=5V o -40 C 1200 o 125 C 800 400 5 10 15 VCC=5V, VBS=7V Typ. 450 400 350 300 -50 20 0 100 150 Temperature ( C) Figure6a. Output Sink Current vs VBS Supply Figure6b. Output Source Current vs Temperature 650 Turn-off Propagation Delay (ns) 250 VCC=5V,VBS=7V, RL=50, CL=2.5nF 620 590 560 Typ. 530 500 -50 50 o VBS(V) Turn-on Propagation Delay (ns) 5.6 Figure 5b. Negative IN and RESET Threshold vs VCC Supply 2000 0 5.3 Vsupply (V) Vsupply (V) 0 50 100 150 VCC=5V,VBS=7V, RL=50, CL=2.5nF 200 150 Typ. 100 -50 o Figure 7a. Turn-On Propagation Delay Time vs Temperature 0 50 100 150 o Temperature( C) Temperature ( C) Figure 7b. Turn-Off Propagation Delay Time vs Temperature www.onsemi.com 10 FAN7085-GF085 High Side Gate Driver with Recharge FET Performance Graphs RES-to-Output Turn-off Propagation Delay (ns) RES-to-Output Turn-on Propagation Delay (ns) VCC=5V, VBS=7V, RL=50, CL=2.5nF 650 600 550 Typ. 500 -50 0 50 100 150 250 VCC=5V, VBS=7V, RL=50, CL=2.5nF 200 150 Typ. 100 -50 0 Figure 8a. RES to Output Turn-On Propagation Delay vs Temperature 50 Logic "1" RES Input Current (uA) Logic "0" Input Current (uA) VCC=5V, RL=50, CL=2.5nF 40 Typ. 30 20 10 0 -50 0 50 100 VCC=5V, RL=50, CL=2.5nF 40 30 Typ. 20 10 0 -50 150 0 o 50 100 150 o Temperature ( C) Temperature ( C) Figure 9. Logic “0” IN Input Current vs Temperature Figure 10. Logic “1” RESET Input Current vs Temperature 5.0 5.0 4.5 VBS Supply Voltage(V) 4.5 VBS Supply Voltage(V) 150 Figure 8b. RES to Output Turn-Off Propagation Delay vs Temperatur 50 Max. 4.0 Typ. 3.5 Min. 4.0 3.5 Max. Typ. 3.0 Min. 2.5 2.5 2.0 -50 100 Temperature ( C) Temperature ( C) 3.0 50 o o 0 50 100 150 2.0 -50 50 100 150 o Temperature( C) Figure 11a. VBS Under Voltage Threshold(+) vs Temperature 0 Temperature( C) o Figure 11b. VBS Under Voltage Threshold(-) vs Temperature www.onsemi.com 11 FAN7085-GF085 High Side Gate Driver with Recharge FET 700 5.0 4.5 Max. VCC Supply Voltage(V) VCC Supply Voltage(V) 4.5 4.0 Typ. 3.5 Min. 3.0 2.5 2.0 -50 0 50 100 4.0 3.5 Max. Typ. 3.0 Min. 2.5 2.0 -50 150 0 50 o VCC=5v, VBS=7, VRL=50, CL=2.5nF Typ. 6 0 50 100 Figure 12b. VCC Under Voltage Threshold(-) vs Temperature Recharge Gate Turn-off Propagation Delay (ns) Recharge Transistor Turn-on Propagation Delay (us) 10 4 -50 300 VBS=7V VCC=5v, VBS=7V, RL=50, CL=2.5nF 260 220 180 Typ. 140 -50 150 0 o Temperature( C) High Side Turn-off to Recharge Gate Turn-on (us) I (mA) 1.4 1.0 Typ. 0.8 150 Figure 14. Recharge FET Turn-off Delay time VCC=5v, VBS=7V, RL=50, CL=2.5nF 0.6 100 o 1.8 0.2 0.4 50 Temperature ( C) Figure 13. Recharge FET Turn-on Delay time 0.6 150 Temperature( C) Figure 12a. VCC Under Voltage Threshold(+) vs Temperature 8 100 o Temperature( C) 1.0 1.2 10 VCC=5v, VBS=7V, RL=50, CL=2.5nF 8 6 4 -50 0 50 100 150 o Temperature ( C) V (V) Figure 15. Recharge FET I-V curve Typ. Figure 16. High Side Turn-off to Recharge FET turn-on VS Temperature www.onsemi.com 12 FAN7085-GF085 High Side Gate Driver with Recharge FET 5.0 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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