0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
FCAS50SN60

FCAS50SN60

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FCAS50SN60 - Smart Power Module for SRM - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FCAS50SN60 数据手册
FCAS50SN60 Smart Power Module for SRM September 2006 FCAS50SN60 Smart Power Module for SRM Features • Very low thermal resistance due to using DBC • 600V-50A single-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Switching frequency of 2.2~8kHz • Isolation rating of 2500Vrms/min. General Description FCAS50SN60 is an advanced smart power module for SRM drive that Fairchild has newly developed and designed to provide very compact and high performance SRM motor drives mainly targeting low-power inverter-driven SRM application especially for a vacuum air cleaner. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and short-circuit protection. The high speed built-in HVIC provides opto-coupler-less IGBT gate driving capability that further reduce the overall size of the inverter system design. In addition the incorporated HVIC facilitates the use of single-supply drive topology enabling the FCAS50SN60 to be driven by only one drive supply voltage without negative bias. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. Applications • AC 200V ~ 242V single-phase SRM drives for home application vacuum cleaner. Top Top View Bottom B ottom View 44 m m 2 6.8 m m Figure 1. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCAS50SN60 Rev. A FCAS50SN60 Smart Power Module for SRM Integrated Power Functions • 600V-50A IGBT asymmetric converter for single-phase SRM drives (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 10. • For low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View (1) VCC(L) (2) COM (3) NC (4) NC (5) IN(L) (6) VFO (7) CFOD (8) CSC (9) G(L) (10) E(L) (11) NC (12) NC (13) IN(H) (14) VCC(H) (15) VB (16) VS (17) G(H) (18) E(H) (19) R(TH) (20) V(TH) (21) NB2 (22) NC (23) NB1 Case Temperature (TC) Detecting Point (24) NA (25) B DBC (26) A (27) P Figure 2. 2 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin Name VCC(L) COM NC NC IN(L) VFO CFOD CSC G(L) E(L) NC NC IN(H) VCC(H) VB VS G(H) E(H) R(TH) V(TH) NB2 NC NB1 NA B A P Common Supply Ground Dummy Pin Dummy Pin Signal Input for Low-side IGBT Fault Output Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Gate terminal of low-side IGBT Emitter terminal of low-side IGBT Dummy Pin Dummy Pin Signal Input for High-side IGBT High-side Bias Voltage High-side Bias Voltage for Gate Driving High-side Bias Voltage Ground for Gate Driving Gate terminal of the High-side IGBT Emitter terminal of the High-side IGBT Thermistor Series Resistor Thermistor Bias Voltage Negative DC–Link Input for B Leg (Should be shorted with NB1 externally) Dummy Pin Negative DC–Link Input for B Leg (Should be shorted with NB2 externally) Negative DC–Link Input for A Leg Output for B Leg Output for A Leg Positive DC–Link Input 3 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Internal Equivalent Circuit and Input/Output Pins (20) V(TH) (19) R(TH) (15) VB (14) VCC(H) (13) IN(H) (16) VS (17) G(H) (18) E(H) P (27) VB VCC COM IN OUT VS A (26) (12) NC (11) NC (8) CSC (7) CFOD (6) VFO B (25) C(SC) C(FOD) VFO OUT(UL) (5) IN(L) (4) NC IN(WL) OUT(VL) IN(VL) NA (24) (3) NC IN(UL) (2) COM COM(L) (1) VCC(L) OUT(WL) NB1 (23) VCC (9) G(L) (10) E(L) NC (22) NB2 (21) Note: 1. The low-side is composed of one IGBT and freewheeling diode and one control IC which has gate driving and protection functions. 2. The power side is composed of four dc-link input terminals and two output terminals. 3. The high-side is composed of one IGBT and freewheeling diode and one drive IC for high-side IGBT. Figure 3. 4 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VPN(Surge) VCES ± IC ± ICP PC TJ Note: Unless Otherwise Specified) Parameter Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature TC = 25°C Conditions Applied between P- NA, NB1, NB2 Rating 550 600 50 100 110 -20 ~ 125 Units V V A A W °C TC = 25°C, Under 1ms Pulse Width TC = 25°C per One IGBT (Note 1) 1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 100°C). However, to insure safe operation, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol VCC VBS VIN VFO IFO VSC Parameter Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage Conditions Applied between VCC(H), VCC(L) - COM Applied between VB - VS Applied between IN(H), IN(L) - COM Applied between VFO - COM Sink Current at VFO Pin Applied between CSC - COM Rating 20 20 -0.3~5.5 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Units V V V V mA V Total System Symbol VPN(PROT) TC TSTG VISO Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Module Case Operation Temperature Storage Temperature Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5V TJ = 125°C, Non-repetitive, less than 6µs Rating 400 -20 ~ 95 -40 ~ 125 Units V °C °C Vrms 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC 2500 Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Note: 2. For the measurement point of case temperature (TC), please refer to Figure 2. Parameter Junction to Case Thermal Resistance Conditions Each IGBT under Operating Condition Each FWDi under Operating Condition Min. - Typ. - Max. 0.90 2.2 Units °C/W °C/W 5 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inverter Part Symbol VCE(SAT) VFM HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Switching Times Conditions VCC = VBS = 15V VIN = 5V VIN = 0V IC = 50A, TJ = 25°C IC = 50A, TJ = 25°C Min. - Typ. 1.6 2.1 0.8 0.6 1.5 0.8 0.08 1.1 0.9 1.5 0.8 0.05 - Max. 2.3 3.0 250 Units V V µs µs µs µs µs µs µs µs µs µs µA VPN = 300V, VCC = VBS = 15V IC = 50A VIN = 0V ↔ 5V, Inductive Load RE(H) = 10Ω (Note 3) VPN = 300V, VCC = VBS = 15V IC = 50A VIN = 0V ↔ 5V, Inductive Load (Note 3) - Collector - Emitter Leakage Current VCE = VCES - 1 0 0 % IC trr V CE IC IC V CE V IN tO N tC (O N ) V IN (O N ) 1 0 % IC 9 0 % IC 1 0 % V C E V IN tO F F tC (O F F ) V IN (O F F ) 10 % V CE 1 0 % IC Figure 4. Switching Time Definition 6 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Symbol IQCCL IQCCH IQBS VFOH VFOL VSC(ref) UVCCD UVCCR UVBSD UVBSR tFOD VIH VIL IINH(ON) IINL(ON) RTH Resistance of Thermistor Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Input Bias Current Short Circuit Trip Level Supply Circuit UnderVoltage Protection Quiescent VBS Supply Current Fault Output Voltage Parameter Quiescent VCC Supply Current VCC = 15V IN(L) = 0V VCC = 15V IN(H) = 0V VBS = 15V IN(H) = 0V Conditions VCC(L) - COM VCC(H) - COM VB - V S Min. 4.5 0.45 Typ. 0.5 1.8 50 5.76 Max. Units 40 80 100 0.8 0.55 12.5 13 12.5 13.0 2.0 0.8 2.2 2.4 mA µA µA V V V V V V V ms V V mA mA kΩ kΩ VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level Detection Level Reset Level CFOD = 33nF (Note 5) Logic‘1’ input voltage Logic‘0’ input voltage IN(H) = 5V IN(L) = 5V Applied between IN(H), IN(L) - COM Applied between IN(H), IN(L) - COM Applied between VCC(L) - COM Applied between VB - V S 10.5 11.0 10.0 10.5 1.4 3.0 0.9 0.9 - @ TC = 25°C (Note Fig. 10) @ TC = 80°C (Note Fig. 10) Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol VPN VCC VBS fPWM VIN(ON) VIN(OFF) Parameter Supply Voltage Control Supply Voltage High-side Bias Voltage PWM Input Signal Input ON Voltage Input OFF Voltage Conditions Applied between P - NA, NB1, NB2 Applied between VCC(H), VCC(L) - COM Applied between VB - VS TC ≤ 100°C, TJ ≤ 125°C Applied between IN(H), IN(L) - COM Applied between IN(H), IN(L) - COM Value Min. 13.5 13.5 - Typ. 300 15 15 3 4 ~ 5.5 0 ~ 0.65 Max. 450 16.5 18.5 - Units V V V kHz V V 7 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Mechanical Characteristics and Ratings Parameter Mounting Torque Mounting Screw - M3 Conditions Limits Min. 5.17 0.51 Typ. 6.29 0.62 15.0 Max. 7.30 0.72 120 - Units Kg•cm N•m um g Surface Flatness Weight Note Figure 5. 0 - (+) (+) (+) Figure 5. Flatness Measurement Position 8 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Time Charts of Protective Function Input Signal Protection Circuit State UV CCR RESET SET RESET Control Supply Voltage a1 UV CCD a3 a6 a2 a4 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Fig. 6. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State UV BSR RESET SET RESET Control Supply Voltage b1 UV BSD b3 b5 b2 b4 b6 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current Fig. 7. Under-Voltage Protection (High-side) 9 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM P5 In p u t S ig n a l P6 In te r n a l IG B T G a te -E m itte r V o lta g e S C D e te c tio n P1 P4 O u tp u t C u r re n t P7 P2 S e n s in g V o lta g e R C F ilte r D e la y S C R e fe r e n c e V o lta g e (0 .5 V ) F a u lt O u tp u t S ig n a l P3 P8 (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Fig. 8. Short-Circuit Current Protection (Low-side Operation only) R-T Graph 120 100 Resistance [kΩ] 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [° C] Fig. 9. R-T Curve of the Built-in Thermistor 10 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM 5V-Line RPF= 4.7kΩ IN(H) SRM Module CPU IN(L) 100 Ω 1nF CPF= 1nF COM VFO Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The input signal section integrates 3.3kΩ(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 10. Recommended CPU I/O Interface Circuit This Value depends on PWM Control Algorithm 15V-Line RE(H)=10Ω R BS 25Ω D BS Vcc SRM module P VB HO 18uF 0.1uF IN COM VS Vcc Outputs OUT 1000uF 1uF IN COM V SL NA NB Note: It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics. RBS should be 2.5 times greater than RE(H) Figure 11. Recommended Bootstrap Operation Circuit and Parameters 11 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM RE(H) 15V line (20) V(TH) (19) R(TH) RBS DBS P (27) (15) VB (14) VCC(H) VB VCC COM IN OUT VS A (26) Gating AH CBS CBSC (13) IN(H) (16) VS (17) G(H) (18) E(H) M C P U (12) NC RF CSC RS Fault 5V line Gating BL RPF CFOD (11) NC (8) CSC (7) CFOD (6) VFO B (25) C(SC) C(FOD) VFO OUT(UL) CDCS (5) IN(L) (4) NC IN(WL) OUT(VL) IN(VL) NA (24) (3) NC IN(UL) (2) COM CBPF CPL CPF COM(L) (1) VCC(L) OUT(WL) NB1 (23) VCC CSP15 CSPC15 (9) G(L) (10) E(L) NC (22) NB2 (21) Input Signal for Short-Circuit Protection Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. By virtue of integrating an application specific type HVIC inside the Module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 10. 4. CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 6 for calculation method. 6. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 7. To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 3~4 µs. 9. Each capacitor should be mounted as close to the pins as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P&N pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22 µF between P and N pins is recommended. 11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12. CSPC15 should be over 1uF and mounted as close to the pins of the module as possible. 13. NB1(pin23) and NB2(pin21) should be shorted externally. Fig. 12. Application Circuit 12 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Detailed Package Outline Drawings 13 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Detailed Package Outline Drawings (Continued) 14 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM Detailed Package Outline Drawings (Continued) 15 FCAS50SN60 Rev. A www.fairchildsemi.com FCAS50SN60 Smart Power Module for SRM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I14 16 FCAS50SN60 Rev. A www.fairchildsemi.com
FCAS50SN60 价格&库存

很抱歉,暂时无法提供与“FCAS50SN60”相匹配的价格&库存,您可以联系我们找货

免费人工找货