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FCAS30DN60BB

FCAS30DN60BB

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FCAS30DN60BB - Smart Power Module for SRM - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FCAS30DN60BB 数据手册
FCAS30DN60BB Smart Power Module January 2008 FCAS30DN60BB Smart Power Module for SRM Features • 600V-30A 2-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and protection • Single-grounded power supply due to built-in HVIC • Isolation rating of 1500Vrms/min. General Description FCAS30DN60BB is an advanced smart power module for SRM drive that Fairchild has newly developed and designed to provide very compact and high performance SRM motor drives mainly targeting low-power SRM application especially for a vacuum air cleaner. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection. The high speed built-in HVIC provides optocoupler-less IGBT gate driving capability that further reduce the overall size of the system. In addition the incorporated HVIC facilitates the use of single-supply drive topology enabling the FCAS30DN60BB to be driven by only one drive supply voltage without negative bias. Applications • 2-phase SRM drives for home application vacuum cleaner. Figure 1. ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCAS30DN60BB Rev. A FCAS30DN60BB Smart Power Module Integrated Power Functions • 600V-30A IGBT asymmetric converter for 2-phase SRM drives (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 11. • For low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration #1 (1)V((2)V-) ((3)U-) (4)U(5)VS(V)/V+ (6)VB(V) (7)Vth (8)IN(VH) (9)VS(U)/U+ (10)VB(U) (11)IN(UH) (13)CFOD (15)IN(VL) (17)VCC (19)N (12)CSC (14)VFO (16)IN(UL)(18)COM (20)P #20 Figure 2. FCAS30DN60BB Rev. A 2 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pin Name V( V- ) ( U- ) UVS(V)/V+ VB(V) Vth IN(VH) VS(U)/U+ VB(U) IN(UH) CSC CFOD VFO IN(VL) IN(UL) VCC COM N P Output for V- Leg Output for V- Leg Output for U- Leg Output for U- Leg Pin Description Output for V+ Leg / High-side Bias Voltage Ground for V-phase IGBT Gate Driving High-side Bias Voltage for V-phase IGBT Gate Driving Thermistor Output Signal Input for V-phase High-side IGBT Output for U+ Leg / High-side Bias Voltage Ground for U-phase IGBT Gate Driving High-side Bias Voltage for U-phase IGBT Gate Driving Signal Input for U-phase High-side IGBT Capacitor (Low-pass Filter) for Short-Current Detection Capacitor for Fault Output Duration Time Selection Fault Output Signal Input for V-phase Low-side IGBT Signal Input for U-phase Low-side IGBT Common Bias Voltage for IC and IGBTs Driving Common Supply Ground Negative DC–Link Input Positive DC–Link Input FCAS30DN60BB Rev. A 3 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Internal Equivalent Circuit and Input/Output Pins (10) VB(U) (11) IN(UH) VCC IN(UH) COM VB OUT VS (20) P (9) VS(U) / U + (6) VB(V) (8) IN(VH) VCC IN(VH) COM VB OUT VS (5) V S(V) / V+ (3) U- (4) U(12) CSC (13) CFOD (14) VFO (16) IN(UL) (15) IN(VL) (17) VCC (18) COM Csc Cfod Vfo IN(UL) IN(VL) VCC COM(L) OUT(VL) OUT(UL) (1) V- (2) V- (7) V(TH) (19) N Note: 1. The power side is composed of two dc-link input terminals and four output terminals. Figure 3. FCAS30DN60BB Rev. A 4 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VPN(Surge) VCES ± IC ± ICP PC TJ Note: Unless Otherwise Specified) Parameter Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature TC = 25°C Conditions Applied between P- N Rating 550 600 30 60 39 -20 ~ 125 Units V V A A W °C TC = 25°C, Under 1ms Pulse Width TC = 25°C per One IGBT (Note 1) 1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 100°C). However, to insure safe operation, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol VCC VBS VIN VFO IFO VSC Parameter Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage Conditions Applied between VCC - COM Applied between VB - VS Applied between IN(H), IN(L) - COM Applied between VFO - COM Sink Current at VFO Pin Applied between CSC - COM Rating 20 20 -0.3~17 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Units V V V V mA V Total System Symbol VPN(PROT) TSTG VISO Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Storage Temperature Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5V TJ = 125°C, Non-repetitive, less than 2μs 60Hz, Sinusoidal, AC 1 minute, Connection Pins to IMS Rating 400 -40 ~ 125 1500 Units V °C Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Note: Parameter Junction to Case Thermal Resistance Conditions Each IGBT under Operating Condition Each FWDi under Operating Condition Min. - Typ. - Max. 3.2 7.5 Units °C/W °C/W 2. For the measurement point of case temperature (TC), please refer to Figure 2. Package Marking & Ordering Information Device Marking FCAS30DN60BB Device FCAS30DN60BB Package SPM20-BC Reel Size _ Tape Width _ Quantity 11 FCAS30DN60BB Rev. A 5 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inverter Part Symbol VCE(SAT) VFM HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES Note: Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Switching Times Conditions VCC = VBS = 15V VIN = 5V VIN = 0V IC = 20A, TJ = 25°C IC = 20A, TJ = 25°C Min. - Typ. 1 0.9 1.4 0.3 0.1 1.2 1.3 1.3 0.3 0.1 - Max. 2.05 2.8 250 Units V V μs μs μs μs μs μs μs μs μs μs μA VPN = 300V, VCC = VBS = 15V IC = 30A VIN = 0V ↔ 5V, Inductive Load (Note 3) VPN = 300V, VCC = VBS = 15V IC = 30A VIN = 0V ↔ 5V, Inductive Load (Note 3) - Collector - Emitter Leakage Current VCE = VCES - 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 1 0 0 % IC trr V CE IC IC V CE V IN tO N tC (O N ) V IN (O N ) 1 0 % IC 9 0 % IC 1 0 % V C E V IN tO F F V IN (O F F ) 10% V CE tC (O F F ) 1 0 % IC Figure 4. Switching Time Definition FCAS30DN60BB Rev. A 6 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Symbol IQCC IQBS VFOH VFOL VSC(ref) UVCCD UVCCR UVBSD UVBSR tFOD VIH VIL RTH Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermistor Short Circuit Trip Level Supply Circuit UnderVoltage Protection Parameter Quiescent VCC Supply Current Quiescent VBS Supply Current Fault Output Voltage VCC = 15V IN(L) = 0V VBS = 15V IN(H) = 0V Conditions VCC - COM V B - VS Min. 4.5 0.45 10.7 11.2 10.1 10.5 1.0 3.0 - Typ. 0.5 11.9 12.4 11.3 11.7 1.8 50 6.021 Max. Units 24 500 0.8 0.55 13.0 13.2 12.5 12.9 0.8 mA μA V V V V V V V ms V V kΩ kΩ VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level Detection Level Reset Level CFOD = 33nF (Note 5) Logic‘1’ input voltage Logic‘0’ input voltage Applied between IN(H), IN(L) - COM Applied between VCC - COM Applied between V B - VS @ TC = 25°C (Note Fig. 9) @ TC = 80°C (Note Fig. 9) Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol VPN VCC VBS fPWM VIN(ON) VIN(OFF) Parameter Supply Voltage Control Supply Voltage High-side Bias Voltage PWM Input Signal Input ON Voltage Input OFF Voltage Conditions Applied between P - N Applied between VCC - COM Applied between VB - VS TC ≤ 100°C, TJ ≤ 125°C Applied between IN(H), IN(L) - COM Applied between IN(H), IN(L) - COM Value Min. 13.5 13.5 - Typ. 300 15 15 3 4 ~ 5.5 0 ~ 0.65 Max. 450 16.5 18.5 - Units V V V kHz V V Bootstrap Diode Part Symbol VRRM IF IFP TJ Parameter Maixmum Repetitive Reverse Voltage Forward Current Forward Current (Peak) Operating Junction Temperature TC = 25°C Conditions Rating 600 0.5 2 -20 ~ 125 Units V A A °C TC = 25°C, Under 1ms Pulse Width FCAS30DN60BB Rev. A 7 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Mechanical Characteristics and Ratings Parameter Mounting Torque Surface Flatness Weight Mounting Screw - M3 Note Figure 5. Conditions Limits Min. 5.17 0.51 - Typ. 6.29 0.62 14.5 Max. 7.30 0.72 - Units Kg•cm N•m um g Figure 5. Flatness Measurement Position FCAS30DN60BB Rev. A 8 www.fairchildsemi.com FCAS30DN60BB Smart Power Module Time Charts of Protective Function Input Signal Protection Circuit State UV CCR RESET SET RESET Control Supply Voltage a1 UV CCD a6 a3 a2 a4 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Fig. 6. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State UV BSR RESET SET RESET Control Supply Voltage b1 UV BSD b5 b3 b4 b6 b2 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current Fig. 7. Under-Voltage Protection (High-side) FCAS30DN60BB Rev. A 9 www.fairchildsemi.com FCAS30DN60BB Smart Power Module P5 In p u t S ig n a l In te r n a l IG B T G a te -E m itte r V o lta g e P6 S C D e te c tio n P1 P4 O u tp u t C u r re n t P7 P2 S e n s in g V o lta g e R C F ilte r D e la y S C R e fe re n c e V o lta g e (0 .5 V ) F a u lt O u tp u t S ig n a l P3 P8 (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Fig. 8. Short-Circuit Current Protection (Low-side Operation only) 100 Thermistor Resistance (kΩ ) M inimum Typical M aximum 10 1 0 20 40 60 80 100 120 140 Temperature [℃ ] Fig. 9. R-T Curve of the Built-in Thermistor FCAS30DN60BB Rev. A 10 www.fairchildsemi.com FCAS30DN60BB Smart Power Module 5V-Line RPF= 4.7kΩ IN(H) SRM Module CPU IN(L) 100 Ω 1nF CPF= 1nF COM VFO Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The input signal section integrates 3.3kΩ(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 10. Recommended CPU I/O Interface Circuit This Value depend on PWM Control Algorithm SRM module P Vcc VB HO 15V-Line 18uF 0.1uF IN COM VS Output Vcc 1000uF 1uF IN OUT COM VSL N Note: 1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible. Figure 11. Recommended Bootstrap Operation Circuit and Parameters FCAS30DN60BB Rev. A 11 www.fairchildsemi.com FCAS30DN60BB Smart Power Module (10) VB(U) (11) IN(UH) VCC IN(UH) COM VB OUT VS (20) P (9) VS(U) / U+ (6) VB(V) (8) IN(VH) Gating V Gating U VCC IN(VH) COM VB OUT VS (5) VS(V) / V+ M M C U Fault (3) U- (4) U5V line (12) CSC (13) CFOD (14) VFO (16) IN(UL) (15) IN(VL) Csc Cfod Vfo IN(UL) IN(VL) VCC COM(L) OUT(UL) (1) V- (2) V- Temp sense 5V line 15V line (17) VCC (18) COM OUT(VL) Shunt Resistor (7) V(TH) (19) N 2 phase SRM-SPM Rf Csc Figure 12. Typical Application Circuit FCAS30DN60BB Rev. A 12 www.fairchildsemi.com PACKAGE CENTER FCAS30DN60BB Smart Power Module .70 R0 FCAS30DN60BB Rev. A 2-MAX1.60 3.30 TYP (3.22) 2-1.50±0.10 20-0.60±0.20 NO 1 0.000 1.270±0.30 4.570±0.30 5.840±0.30 9.140±0.30 10.410±0.30 13.710±0.30 14.980±0.30 18.280±0.30 19.550±0.30 22.850±0.30 24.120±0.30 25.390±0.30 26.660±0.30 27.930±0.30 29.200±0.30 30.470±0.30 31.740±0.30 33.010±0.30 36.310±0.30 NO 20 Detailed Package Outline Drawings 18.155±0.50 42.00±0.10 PACKAGE CENTER 45.00±0.20 13 18-MAX0.95 0.50+0.10 -0.05 R0 .7 0 10.50±0.10 28.00±0.20 26.50±0.30 22.20±0.30 20.00±0.30 (2.50) 6° 3.60 5.00±0.30 3.10±0.30 5.50±0.20 (9.00) 37.00±0.50 6° www.fairchildsemi.com FCAS30DN60BB Smart Power Module TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I15 14 FCAS30DN60BB Rev. A www.fairchildsemi.com
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