FDA75N28

FDA75N28 280V N-Channel MOSFET October 2006 FDA75N28 280V N-Channel MOSFET Features • 75A, 280V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 111 nC) • Low Crss ( typical 90 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3P G DS FDA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDA75N28 280 75 45 300 ± 30 3080 75 52 4.5 520 4.2 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.24 -40 Unit °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA75N28 Rev. A FDA75N28 280V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA75N28 Device FDA75N28 Package TO-3P Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 37.5A VDS = 40V, ID = 37.5A (Note 4) Min 280 ------ Typ -0.28 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.035 75 5.0 0.041 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ---5040 915 90 6700 1215 135 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time (Note 4, 5) -VDD = 140V,ID = 75A RG =25Ω ----VDS = 224V, ID = 75A VGS = 10V (Note 4, 5) 105 580 190 310 111 31 49 146 538 418 262 144 --- ns ns ns ns nC nC nC Total Gate Charge Gate-Source Charge Gate-Drain Charge --- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 75A VGS = 0V, IS = 75A dIF/dt =100A/µs (Note 4) ------ ---320 3.5 75 300 1.4 --- A A V ns µC 2 FDA75N28 Rev. A www.fairchildsemi.com FDA75N28 280V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 10 2 ID, Drain Current [A] ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 150 C 10 1 o 10 1 25 C -55 C * Notes : 1. VDS = 40V 2. 250µs Pulse Test o o * Notes : 1. 250µs Pulse Test 10 0 2. TC = 25 C -1 o 10 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.09 200 RDS(ON) [Ω], Drain-Source On-Resistance 0.08 IDR, Reverse Drain Current (A) 100 150 C o 0.07 VGS = 10V 0.06 10 0.05 VGS = 20V 25 C o 0.04 * Note : TJ = 25 C o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.03 0 25 50 75 100 125 150 175 200 225 250 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage (V) Figure 5. Capacitance Characteristics 10000 Figure 6. Gate Charge Characteristics 12 Coss 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage (V) 10 VDS = 56V VDS = 140V VDS = 224V Ciss Capacitances (pF) 8 6000 6 4000 Crss 2000 * Note : 1. VGS = 0 V 2. f = 1 MHz 4 2 * Note : ID = 75A 0 -1 10 10 0 10 1 50 0 0 20 40 60 80 100 120 VDS, Drain-Source Voltage (V) QG, Total Gate Charge (nC) 3 FDA75N28 Rev. A www.fairchildsemi.com FDA75N28 280V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 rDS(on), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 37.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature ( C) TJ, Junction Temperature ( C) Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 3 80 10 2 ID, Drain Current [A] ID, Drain Current (A) 10 1 10 µs 100 µs 1 ms 10 ms 100 ms Operation in This Area is Limited by R DS(on) 70 60 50 40 30 20 10 0 25 DC 10 0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 2 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature ( C) Figure 11. Transient Thermal Response Curve (t), Thermal Response 10 -1 D = 0 .5 0 .2 0 .1 0 .0 5 * N o te s : 1 . Z θ J C ( t) = 0 .2 4 o C /W M a x . 10 -2 0 .0 2 0 .0 1 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) θJC PDM s in g le p u ls e Z t1 t2 -3 -2 -1 0 1 10 -3 10 -5 10 -4 10 10 10 10 10 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDA75N28 Rev. A www.fairchildsemi.com FDA75N28 280V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDA75N28 Rev. A www.fairchildsemi.com FDA75N28 280V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDA75N28 Rev. A www.fairchildsemi.com FDA75N28 280V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters 7 FDA75N28 Rev. A www.fairchildsemi.com FDA75N28 280V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FDA75N28 Rev. A www.fairchildsemi.com