FDC638

J une 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 pin 1 8 2 G D D 5 SuperSOT TM -6 3 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain-Source Voltage TA = 25°C unless otherwise note Ratings -20 ±8 (Note 1a) Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed -4.5 -20 PD Maximum Power Dissipation (Note 1a) (Note 1b) 1.6 0.8 -55 to 150 W TJ ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS R θ JA R θ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W ©1999 Fairchild Semiconductor FDC638P Rev.D ELECTRICAL CHARACTERISTICS Symbol Parameter (TA = 25°C unless otherwise noted) Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA I D = -250 µA, Referenced to 25 C VDS = -16 V, VGS = 0 V TJ = 55 C I GSSF I GSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o o -20 -18 -1 -10 100 -100 V mV/ C µA µA nA nA o ∆BVDSS/ ∆TJ I DSS VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance VDS = VGS , I D = -250 µA I D = -250 µA, Referenced to 25 C VGS = -4.5 V, I D = -4.5 A TJ = 125 C VGS = -2.5 V, I D = -3.8 A o o -0.4 -0.9 3 0.039 0.054 0.057 -1.5 V mV/ C o ∆VGS(th)/ ∆TJ R DS(ON) 0.045 0.072 0.065 Ω I D(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -10 V, I D = -4.5 A -20 6.5 A S DYNAMIC CHARACTERISTICS C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 1240 270 100 pF pF pF SWITCHING CHARACTERISTICS (Note 2) t D(on) tr t D(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, I D = -4.5 A, VGS = -5 V VDD = -5 V, I D = -1 A, VGS = -4.5 V, R GEN = 6 Ω 8 15 45 30 13 1.8 3 16 27 65 50 19 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Notes: 1. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC i s guaranteed by design while Rθ CA is determined by the user's board design. a. 78oC/W when mounted on a 1 in 2 pad of 2oz Cu on FR-4 board. b. 156oC/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Continuous Source Diode Current Drain-Source Diode Forward Voltage VGS = 0 V, I S = -1.3 A (Note 2) -1.3 -0.75 -1.2 A V FDC638P Rev.D Typical Electrical Characteristics 20 - ID , DRAIN-SOURCE CURRENT (A) 1.6 -3.0V RDS(ON) , NORMALIZED 16 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V - 2.5V VGS = -2.5V 1.4 12 -3.0V 1.2 -3.5V -4.0V -4.5V 8 - 2.0V 1 4 0 0 1 2 3 4 5 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 - I , DRAIN CURRENT (A) D 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage . 1.6 DRAIN-SOURCE ON-RESISTANCE 0.15 R DS(ON) , NORMALIZED 1.4 I D = -4.5A V GS = - 4.5V RDS(ON) , ON-RESISTANCE (OHM) I D = -2.0A 0.12 1.2 0.09 1 0.06 A T = 125°C 0.8 0.03 25°C 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-to-Source Voltage. 20 VDS = -5V - I D , DRAIN CURRENT (A) 16 T = -55°C J 25°C 125°C - I , REVERSE DRAIN CURRENT (A) 20 10 VGS = 0V T = 125°C J 1 12 25°C -55°C 0.1 8 4 0.01 0 0 0.8 1.6 2.4 3.2 4 -VGS , GATE TO SOURCE VOLTAGE (V) S 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5.Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC638P Rev.B Typical Electrical Characteristics 5 -VGS , GATE-SOURCE VOLTAGE (V) 2500 I D = -4.5A VD S = -5V -10V -15V 4 Css i CAPACITANCE (pF) 1000 3 400 200 100 Coss 2 Crss f = 1 MHz VGS = 0 V 0.3 1 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 1 0 0 3 Q 6 9 12 15 g , GATE CHARGE (nC) 50 0.1 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 IT LIM N) S(O RD 100 us 1m s 10m s 100 ms 5 - I D , DRAIN CURRENT (A) 5 4 POWER (W) SINGLE PULSE RθJA =156°C/W T = 25°C A 1 0.3 3 1s 0.05 V GS = -4.5V SINGLE PULSE RθJA =156 °C/W A T A = 25°C 0.2 DC 2 1 0.01 0.1 0.5 1 2 5 10 - VDS , DRAIN-SOURCE VOLTAGE (V) 30 0 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.00001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) RθJA (t) = r(t) * RθJA R θ JA = 156°C/W t1 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1 / t 2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC638P Rev.B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figur e 1.0 Customize Label Packaging Description: SSOT-6 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. . These reeled parts in standard option are shipped w ith 3,000 units per 7" or 177cm di ameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm di ameter reel. This and s ome ot her option s are described in the Packaging Info rmation table. These full reels are in di vidu ally barcod e labeled and pl aced in side a pi zza box (illustrated in figure 1.0) made of recyclable corrugated br own paper with a Fairchild logo pr inting One p izza bo x cont ains three reels maximum. .. And t hese pi zza boxes are pl aced inside a barcode labeled shipping box whic h comes in d if ferent sizes depend ing on the number of par ts shipped. Anti static Cover Tape F63TNR Label Embossed Carrier Tape 631 631 SSOT-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no f l ow c ode ) 631 631 631 Pin 1 L99Z TNR 3,000 7" Dia 184x187x47 9,000 0.0158 0.1440 No markin g requir ed D87Z TNR 10,000 13" 343x343x64 30,000 0.0158 0.4700 TNR 3,000 7" Dia 184x187x47 9,000 0.0158 0.1440 SSOT-6 Unit Orientation 343mm x 342mm x 64mm Intermediate box fo r D87Z Option F63TNR Label F63TNR Label F63TNR Label sa mpl e 184mm x 187mm x 47mm Pizza Box fo r Standar d Opti on F63TNR Label LOT: CBVK741B019 FSID: FDC633N QTY: 3000 SPEC: SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Comp onent s Traile r Tape 300mm mi nimum or 75 empty poc kets Lead er Tape 500mm mi nimum or 125 emp ty poc kets 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SSOT-6 (8mm) A0 3.23 +/-0.10 B0 3.18 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.37 +/-0.10 T 0.255 +/-0.150 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia July 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SuperSOT™-6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 © 1998 Fairchild Semiconductor Corporation September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.