FDC638APZ

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. P-Channel 2.5V PowerTrench® Specified MOSFET General Description –20V, –4.5A, 43mΩ Features This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance „ Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A „ Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A „ Low gate charge (8nC typical). These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package:small footprint (72% smaller than standard SO–8) low profile (1mm thick). Application „ RoHS Compliant „ DC - DC Conversion S D D G D 1 6 D D 2 5 D G 33 4 S D D Pin 1 SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Note 1a) -Pulsed PD TJ, TSTG Ratings –20 Units V ±12 V –4.5 A –20 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range W –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 156 °C/W Package Marking and Ordering Information Device Marking .638Z ©2006 Semiconductor Components Industries, LLC. October-2017, Rev.2 Device FDC638APZ Reel Size 7’’ 1 Tape Width 8mm Quantity 3000 units Publication Order Number: FDC638APZ/D FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET FDC638APZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –20 ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C –9.4 VDS = –16V, –1 VGS = 0V TJ = 55°C –10 VGS = ±12V, VDS = 0V µA ±10 µA –1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 2.9 VGS = –4.5V, ID = –4.5A 37 rDS(on) Static Drain to Source On Resistance VGS = –2.5V, ID = –3.8A 52 68 VGS = –4.5V, ID = –4.5A, TJ = 125°C 50 72 ID(on) On-State Drain Current VGS = –10V, VDS = –4.5A gFS Forward Transconductance VDS = –10V, ID = –4.5A –0.4 –0.8 mV/°C 43 mΩ A –20 18 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1MHz 750 1000 pF 155 210 pF 130 195 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –5V, ID = –4.5A VGS = –4.5V, RGEN = 6Ω VGS = 0V to –4.5V VDD = –5V ID = –4.5A 6 12 ns 20 31 ns 48 77 ns 47 72 8 12 ns nC 2 nC 2 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A trr Reverse Recovery Time Qrr Reverse Recovery Charge (Note 2) IF = –4.5A, di/dt = 100A/µs –1.3 A –0.8 –1.2 V 24 36 ns 13 20 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.RθJC is guaranteed by design while RθCA is determined by user’s board design. a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. www.onsemi.com 2 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 2.2 VGS = -2.5V -ID, DRAIN CURRENT (A) VGS = -3.0V 15 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 VGS = -3.5V VGS = -4.5V 10 VGS = -2.0V 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -1.5V 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 1.6 1.4 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On- Resistance vs Junction Temperature VDD = -5V 15 10 TJ = 150oC TJ = 25oC TJ = 1.5 -55oC 2.0 2.5 3.0 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 1.0 VGS = -3.0V 1.4 VGS = -3.5V 1.0 0.6 VGS = -4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 5 10 -ID, DRAIN CURRENT(A) 15 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 160 120 TJ = 125oC 80 40 0 1.5 2.0 2.5 3.0 3.5 4.0 -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 10 VGS = 0V 1 0.1 0.01 TJ = 150oC TJ = 25oC 0.001 TJ = -55oC 0.0001 0.0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics TJ = 25oC ID = -2.2A Figure 4. On-Resistance vs Gate to Source Voltage 20 5 1.8 200 ID =-4.5A VGS = -4.5V 1.2 0.6 -50 VGS = -2.5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics VGS = -2.0V 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 2000 ID = -4.5A VDD = -5V 4 CAPACITANCE (pF) VDD = -10V 3 VDD = -15V 2 1 Coss f = 1MHz VGS = 0V 100 0 0 2 4 6 8 Qg, GATE CHARGE(nC) 10 70 0.1 12 Figure 7. Gate Charge Characteristics 1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 TJ = 150oC 0.01 1E-3 TJ = 25oC 1E-4 0 5 10 15 -VGS, GATE TO SOURCE VOLTAGE(V) rDS(on) LIMIT 50 100us 1ms 1 10ms 100ms 0.1 1 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 o SINGLE PULSE 10 -2 10 -1 10 0 10 1 10 10 50 Figure 10. Forward Bias Safe Operating Area 30 0 -3 10 DC -VDS, DRAIN to SOURCE VOLTAGE (V) TA=25 C 20 1s SINGLE PULSE TJ = MAX RATED TA = 25OC 0.01 0.1 20 SINGLE PULSE o RθJA = 156 C/W 40 10us 10 Figure 9. Gate Leakage Current vs Gate to Source Voltage P(PK),PEAK TRANSIENT POWER (W) 20 100 VGS = 0V 1E-5 Crss Figure 8. Capacitance vs Drain to Source Voltage -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT(mA) Ciss 1000 2 10 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE 0.001 -4 10 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -3 10 -2 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Transient Thermal Response Curve www.onsemi.com 4 2 10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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