FDD5N50U

FDD5N50U N-Channel MOSFET, FRFET December 2007 FDD5N50U N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G S D G D-PAK S o MOSFET Maximum Ratings TC = 25 C unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 ±30 3 1.8 12 275 3 4 4.5 40 0.3 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.4 110 Units o C/W ©2007 Fairchild Semiconductor Corporation FDD5N50U Rev. A 1 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDD5N50U FDD5N50U Device FDD5N50UTM FDD5N50UTF Package D-PAK D-PAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.6 25 250 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 1.5A VDS = 20V, ID = 1.5A (Note 4) 3 - 1.65 4 5 2 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 5A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 485 65 5 11 3 5 650 90 8 15 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A R G = 25 Ω (Note 4, 5) - 14 21 27 20 38 52 64 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 3A VGS = 0V, ISD = 5A dIF/dt = 100A/µs (Note 4) - 36 33 3 12 1.6 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 61mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD5N50U Rev. A 2 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 10 ID,Drain Current[A] 1 ID,Drain Current[A] 150 C 25 C o o 1 0.1 *Notes: 1. 250µs Pulse Test 0.02 0.1 2. TC = 25 C o 0.1 30 *Notes: 1. VDS = 20V 2. 250µs Pulse Test 1 10 VDS,Drain-Source Voltage[V] 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 30 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 2.2 VGS = 10V VGS = 20V 10 150 C 25 C o o 1.8 1.4 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 0 6 12 ID, Drain Current [A] 18 1 0.4 2. 250µs Pulse Test 1.0 1.6 VSD, Body Diode Forward Voltage [V] 2.2 Figure 5. Capacitance Characteristics 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 800 Capacitances [pF] 8 600 Ciss Coss *Note: 1. VGS = 0V 2. f = 1MHz 6 400 4 200 Crss 2 *Note: ID = 5A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 4 8 Qg, Total Gate Charge [nC] 12 FDD5N50U Rev. A 3 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. Maximum Safe Operating Area 20 40µs 100µs 10 1.1 ID, Drain Current [A] 1ms 1 Operation in This Area is Limited by R DS(on) 10ms DC 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 3.5 3 ID, Drain Current [A] 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve 3 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 PDM t1 t2 o 0.05 0.02 0.01 *Notes: 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.005 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDD5N50U Rev. A 4 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N50U Rev. A 5 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD5N50U Rev. A 6 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N50U Rev. A 7 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD5N50U Rev. A 8 www.fairchildsemi.com