FDI038N06

FDI040N06 N-Channel PowerTrench® MOSFET June 2009 FDI040N06 N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ Features • RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC convertors / Synchronous Rectification D GDS I2-PAK FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage -Continuous (TC = 25oC, Silicion Limited) Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 100oC, Silicion Limited) -Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 60 ±20 168* 118* 120 672 872 7.0 231 1.54 -55 to +175 300 A mJ V/ns W W/oC o Units V V A Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C oC *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.65 62.5 Units o C/W ©2009 Fairchild Semiconductor Corporation FDI040N06 Rev. A 1 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDI038N06 Device FDI038N06 Package TO-262 Reel Size Tube Tape Width Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TC= 25oC ID = 250µA, Referenced to VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC VGS = ±20V, VDS = 0V 25oC 60 0.04 1 500 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 75A VDS = 10V, ID = 75A (Note 4) 2.5 - 3.5 3.2 169 4.5 4.0 - V mΩ S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) - 6190 900 385 102 32 32 8235 1195 580 133 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) - 30 40 55 24 70 90 120 58 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/µs (Note 4) - 41 47 168 672 1.3 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25° C C 3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25° 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDI040N06 Rev. A 2 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 1000 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 1000 *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 ID,Drain Current[A] ID,Drain Current[A] 100 175 C o 10 25 C o 10 -55 C o 1 *Notes: 1. 250µs Pulse Test 2. TC = 25 C o 0.1 0.01 0.1 1 VDS,Drain-Source Voltage[V] 6 1 2 3 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1000 RDS(ON) [mΩ ], Drain-Source On-Resistance IS, Reverse Drain Current [A] 3.5 VGS = 10V 100 175 C o 25 C o 3.0 VGS = 20V 10 *Notes: 1. VGS = 0V 2.5 0 60 *Note: TC = 25 C o 120 180 240 ID, Drain Current [A] 300 360 1 0.2 2. 250µs Pulse Test 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 10000 Ciss Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 12V VDS = 30V VDS = 48V 8 Capacitances [pF] 6 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4 Crss 2 *Note: ID = 75A 100 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 FDI040N06 Rev. A 3 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance 2.0 1.1 1.6 1.0 1.2 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 *Notes: 1. VGS = 10V 2. ID = 75A 0.8 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 0.4 -75 -25 25 75 125 175 o TJ, Junction Temperature [ C] 225 Figure 9. Maximum Safe Operating Area 1000 100µs Figure 10. Maximum Drain Current vs. Case Temperature 180 ID, Drain Current [A] 144 1ms ID, Drain Current [A] 100 108 Limited by package 10 Operation in This Area is Limited by R DS(on) 10ms 100ms 1s o 72 1 *Notes: 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o 36 0.1 0.1 1 10 VDS, Drain-Source Voltage [V] 100 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [Zθ JC] 0.5 0.2 0.1 0.05 0.02 0.1 PDM t1 t2 o 0.01 0.01 Single pulse *Notes: 1. ZθJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 1 10 FDI040N06 Rev. A 4 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDI040N06 Rev. A 5 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as D U T V DD V GS • d v / d t c o n t r o lle d b y R G • IS D c o n t r o lle d b y p u ls e p e r io d VGS ( D r iv e r ) G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDI040N06 Rev. A 6 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Mechanical Dimensions I2-PAK 9.90 ±0.20 (0.40) 4.50 ±0.20 +0.10 1.30 –0.05 1.20 ±0.20 9.20 ±0.20 MAX 3.00 (1.46) 13.08 ±0.20 (0.94) 1.27 ±0.10 1.47 ±0.10 0.80 ±0.10 10.08 ±0.20 MAX13.40 (4 ) 5° 2.54 TYP 2.54 TYP 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDI040N06 Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com