N-Channel PowerTrench® MOSFET
60 V, 80 A, 3.8 mΩ
Features
Applications
• RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• QG(tot) = 96 nC ( Typ.) @ VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
D
GD
S
TO-220
G
DS
I2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameterr
FDP038AN06A0
FDI038AN06A0
Unit
VDSS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
±20
V
Drain Current
ID
Continuous (TC < 151oC, VGS = 10V)
80
A
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
17
A
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Figure 4
A
625
mJ
Power dissipation
310
W
Derate above 25oC
2.07
W/oC
-55 to 175
oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Max.
RθJA
Thermal Resistance, Junction to Ambient, Max. (Note 2)
©2002 Semiconductor Components Industries, LLC.
September-2017,Rev. 3
0.48
o
C/W
62
o
C/W
Publication Order Number:
FDP038AN06A0/D
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
FDP038AN06A0 / FDI038AN06A0
Device Marking
FDP038AN06A0
Device
FDP038AN06A0
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
FDI038AN06A0
FDI038AN06A0
I2-PAK
Tube
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
60
-
-
-
V
-
1
-
-
250
µA
VGS = ±20V
-
-
±100
nA
-
4
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
ID = 80A, VGS = 10V
-
0.0035 0.0038
ID = 40A, VGS = 6V
-
0.0049 0.0074
ID = 80A, VGS = 10V,
TJ = 175oC
-
0.0071 0.0078
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 30V
ID = 80A
Ig = 1.0mA
-
6400
-
-
1123
-
pF
pF
-
367
-
pF
96
124
nC
-
12
15
nC
-
26
-
nC
-
15
-
nC
-
27
-
nC
(VGS = 10V)
tON
Turn-On Time
-
-
175
ns
td(ON)
Turn-On Delay Time
-
17
-
ns
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
tOFF
-
144
-
ns
-
34
-
ns
Fall Time
-
60
-
ns
Turn-Off Time
-
-
115
ns
VDD = 30V, ID = 80A
VGS = 10V, RGS = 2.4Ω
Drain-Source Diode Characteristics
ISD = 80A
-
-
1.25
V
ISD = 40A
-
-
1.0
V
Reverse Recovery Time
ISD = 75A, dISD/dt = 100A/µs
-
-
38
ns
Reverse Recovered Charge
ISD = 75A, dISD/dt = 100A/µs
-
-
39
nC
VSD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting TJ = 25°C, L = 0.255mH, IAS = 70A.
2: Pulse Width = 100s
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2
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
1.2
250
CURRENT LIMITED
BY PACKAGE
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
200
150
100
50
0.2
0
0
25
50
75
100
150
125
0
25
175
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
o
TC, CASE TEMPERATURE ( C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
1000
IDM, PEAK CURRENT (A)
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 10V
100
10
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
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3
10-1
100
101
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
2000
100
10µs
1000
100
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
10ms
1
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
STARTING TJ = 25oC
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100µs
STARTING TJ = 150oC
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
0.1
1
10
1
0.01
100
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
NOTE: Refer to ON Semiconductor Application Notes AN7514 and
AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
VGS = 20V
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
160
120
80
TJ = 175oC
TJ = 25oC
40
120
VGS = 6V
VGS = 5V
80
40
TJ = -55oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0
0
3.0
3.5
4.0
4.5
5.0
5.5
VGS , GATE TO SOURCE VOLTAGE (V)
6
0
Figure 7. Transfer Characteristics
0.5
1.0
VDS , DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 8. Saturation Characteristics
2.5
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
DRAIN TO SOURCE ON RESISTANCE(mΩ)
VGS = 10V
VGS = 6V
5
4
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
VGS = 10V, ID =80A
3
0
20
40
60
80
0.5
-80
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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4
200
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1.4
1.2
VGS = VDS, ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
1.0
0.8
0.6
0.4
0.2
-80
-40
0
40
80
120
160
1.1
1.0
0.9
200
-80
-40
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
10000
80
120
160
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS , GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
CISS = CGS + CGD
CRSS = CGD
VGS = 0V, f = 1MHz
1
VDD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 40A
2
0
100
0.1
40
10
COSS ≅ CDS + CGD
1000
0
TJ , JUNCTION TEMPERATURE (oC)
10
60
0
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
25
50
Qg, GATE CHARGE (nC)
75
100
Figure 14. Gate Charge Waveforms for Constant
Gate Current
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5
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
IAS
+
RG
VDD
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
VGS
VGS = 10V
+
Qgs2
VDD
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 18. Gate Charge Waveforms
Figure 17. Gate Charge Test Circuit
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
tf
90%
90%
+
VGS
VDD
-
10%
0
10%
DUT
90%
RGS
VGS
VGS
0
Figure 19. Switching Time Test Circuit
50%
10%
50%
PULSE WIDTH
Figure 20. Switching Time Waveforms
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6
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms
.SUBCKT FDP038AN06A0 2 1 3 ; rev July 04, 2002
Ca 12 8 1.5e-9
Cb 15 14 1.5e-9
Cin 6 8 6.1e-9
LDRAIN
DPLCAP
DRAIN
2
5
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
5
51
ESLC
EVTHRES
+ 19 8
+
LGATE
GATE
1
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
ESG
DBREAK
+
RSLC2
Ebreak 11 7 17 18 69.3
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
RLDRAIN
RSLC1
51
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
6
MMED
MSTRO
RLGATE
Lgate 1 9 4.81e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 4.63e-9
LSOURCE
CIN
8
7
SOURCE
3
RSOURCE
RLSOURCE
RLgate 1 9 48.1
RLdrain 2 5 10
RLsource 3 7 46.3
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
S1A
12
S2A
S1B
CA
17
18
RVTEMP
S2B
13
19
CB
6
8
VBAT
5
8
EDS
-
IT
14
+
+
EGS
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1e-4
Rgate 9 20 1.36
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2.8e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
RBREAK
15
14
13
13
8
-
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DbodyMOD D (IS=2.4E-11 N=1.04 RS=1.65e-3 TRS1=2.7e-3 TRS2=2e-7
+ CJO=4.35e-9 M=5.4e-1 TT=1e-9 XTI=3.9)
.MODEL DbreakMOD D (RS=1.5e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.7e-9 IS=1e-30 N=10 M=0.47)
.MODEL MmedMOD NMOS (VTO=3.3 KP=9 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.36 T_abs=25)
.MODEL MstroMOD NMOS (VTO=4.00 KP=275 IS=1e-30 N=10 TOX=1 L=1u W=1u T_abs=25)
.MODEL MweakMOD NMOS (VTO=2.72 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=13.6 RS=0.1 T_abs=25)
.MODEL RbreakMOD RES (TC1=9e-4 TC2=-9e-7)
.MODEL RdrainMOD RES (TC1=4e-2 TC2=3e-4)
.MODEL RSLCMOD RES (TC1=1e-3 TC2=1e-5)
.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-6.7e-3 TC2=-1.5e-5)
.MODEL RvtempMOD RES (TC1=-2.5e-3 TC2=1e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-1.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
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7
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
rev July 4, 2002
template FDP038AN06A0 n2,n1,n3 = m_temp
electrical n2,n1,n3
number m_temp=25
{
var i iscl
dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9)
dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.7e-9,isl=10e-30,nl=10,m=0.47)
m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.00,kp=275,is=1e-30, tox=1)
LDRAIN
m..model mweakmod = (type=_n,vto=2.72,kp=0.03,is=1e-30, tox=1,rs=0.1DP
) LCAP 5
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5)
10
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-4)
RLDRAIN
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=0.5)
RSLC1
51
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1)
RSLC2
c.ca n12 n8 = 1.5e-9
ISCL
c.cb n15 n14 = 1.5e-9
c.cin n6 n8 = 6.1e-9
DBREAK
50
DRAIN
2
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 69.3
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
GATE
1
EVTEMP
RGATE + 18 22
9
20
21
EBREAK
+
17
18
-
MMED
MSTRO
CIN
8
LSOURCE
SOURCE
3
7
RSOURCE
RLSOURCE
S1A
i.it n8 n17 = 1
12
S2A
13
8
S1B
CA
RBREAK
15
14
13
17
18
RVTEMP
S2B
13
CB
6
8
EGS
19
VBAT
5
8
EDS
-
IT
14
+
+
res.rlgate n1 n9 = 48.1
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 46.3
DBODY
MWEAK
6
RLGATE
l.lgate n1 n9 = 4.81e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 4.63e-9
11
16
-
+
8
22
RVTHRES
m.mmed n16 n6 n8 n8 = model=mmedmod, temp=m_temp, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, temp=m_temp, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, temp=m_temp, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=9e-4,tc2=-9e-7
res.rdrain n50 n16 = 1e-4, tc1=4e-2,tc2=3e-4
res.rgate n9 n20 = 1.36
res.rslc1 n5 n51 = 1e-6, tc1=1e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.8e-3, tc1=5e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-6.7e-3,tc2=-1.5e-5
res.rvtemp n18 n19 = 1, tc1=-2.5e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/250))** 10))
}
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8
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
SABER Electrical Model
th
REV 23 July 4, 2002
JUNCTION
FDP038AN06A0T
CTHERM1 TH 6 6.45e-3
CTHERM2 6 5 3e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.65e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 TL 1e-1
RTHERM1
CTHERM1
6
RTHERM1 TH 6 3.24e-3
RTHERM2 6 5 8.08e-3
RTHERM3 5 4 2.28e-2
RTHERM4 4 3 1e-1
RTHERM5 3 2 1.1e-1
RTHERM6 2 TL 1.4e-1
RTHERM2
CTHERM2
5
SABER Thermal Model
RTHERM3
SABER thermal model FDP035AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =6.45e-3
ctherm.ctherm2 6 5 =3e-2
ctherm.ctherm3 5 4 =1.4e-2
ctherm.ctherm4 4 3 =1.65e-2
ctherm.ctherm5 3 2 =4.85e-2
ctherm.ctherm6 2 tl =1e-1
CTHERM3
4
RTHERM4
CTHERM4
3
rtherm.rtherm1 th 6 =3.24e-3
rtherm.rtherm2 6 5 =8.08e-3
rtherm.rtherm3 5 4 =2.28e-2
rtherm.rtherm4 4 3 =1e-1
rtherm.rtherm5 3 2 =1.1e-1
rtherm.rtherm6 2 tl=1.4e-1
}
RTHERM5
CTHERM5
2
CTHERM6
RTHERM6
tl
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9
CASE
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
SPICE Thermal Model
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220 3L
Figure 21. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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10
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-262 3L (I2PAK)
Figure 22. 3LD, TO262, Jedec Variation AA (I2PAK)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
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Dimension in Millimeters
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