FDP054N10

FDP054N10 N-Channel PowerTrench® MOSFET April 2009 FDP054N10 N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ Features • RDS(on) = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC Converters / Synchronous Rectification D G G DS TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 ±20 144* 102 120 576 1153 3.6 263 1.75 -55 to +175 300 A mJ V/ns W W/oC o o Units V V A Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.57 62.5 Units o C/W ©2009 Fairchild Semiconductor Corporation FDP054N10 Rev. A 1 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP054N10 Device FDP054N10 Package TO-220 Reel Size Tape Width Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TC = 25oC ID = 250μA, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150oC VGS = ±20V, VDS = 0V 100 0.01 1 500 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 75A VGS = 10V, ID = 75A (Note 4) 2.5 3.5 4.6 192 4.5 5.5 V mΩ S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 80V, ID = 75A, VGS = 10V (Note 4,5) VDS = 25V, VGS = 0V f = 1MHz 9985 935 390 156 53 48 13280 1245 585 203 pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4,5) 44 92 80 39 98 194 170 88 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD =75A dIF/dt = 100A/μs (Note 4) 57 121 144 576 1.3 A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP054N10 Rev. A 2 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Figure 2. Transfer Characteristics 1000 * Notes : 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 150 C o 100 25 C o *Notes: 1. 250μs Pulse Test 2. TC = 25 C o 10 -55 C o 10 0.1 1 1 VDS, Drain-Source Voltage[V] 6 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1000 RDS(on) [mΩ], Drain-Source On-Resistance 6 VGS = 10V IS, Reverse Drain Current [A] 100 150 C o 5 25 C o 10 Notes: 1. VGS = 0V 2. 250μs Pulse Test 4 VGS = 20V * Note : TC = 25 C o 3 0 100 200 ID, Drain Current [A] 300 400 1 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 100000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 20V VDS = 50V VDS = 80V 8 Ciss Capacitances [pF] 10000 6 Coss 4 1000 * Note: 1. VGS = 0V 2. f = 1MHz Crss 2 * Note : ID = 75A 100 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 30 60 90 120 Qg, Total Gate Charge [nC] 150 180 FDP054N10 Rev. A 3 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance 2.0 1.1 1.6 1.0 1.2 0.9 * Notes : 1. VGS = 0V 2. ID = 10mA 0.8 * Notes : 1. VGS = 10V 2. ID = 75A 0.8 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 0.4 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 1000 10μs 100μs 1ms Figure 10. Maximum Drain Current vs. Case Temperature 150 ID, Drain Current [A] ID, Drain Current [A] 100 10 Operation in This Area is Limited by R DS(on) 10ms DC 100 Limitted by package 1 *Notes: 50 0.1 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] 100 200 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZθJC] 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 o 0.01 * Notes : Single pulse 1. ZθJC(t) = 0.57 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 1 10 FDP054N10 Rev. A 4 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP054N10 Rev. A 5 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP054N10 Rev. A 6 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP054N10 Rev. A 7 www.fairchildsemi.com FDP054N10 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ PowerTrench® F-PFS™ The Power Franchise® Build it Now™ PowerXS™ FRFET® ® CorePLUS™ Global Power ResourceSM Programmable Active Droop™ ® CorePOWER™ Green FPS™ QFET TinyBoost™ CROSSVOLT™ Green FPS™ e-Series™ QS™ TinyBuck™ CTL™ Gmax™ Quiet Series™ TinyLogic® Current Transfer Logic™ GTO™ RapidConfigure™ ® TINYOPTO™ EcoSPARK IntelliMAX™ TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® μSerDes™ STEALTH™ MillerDrive™ Fairchild® SuperFET™ MotionMax™ Fairchild Semiconductor® SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 OPTOLOGIC® UHC® ® FACT® OPTOPLANAR Ultra FRFET™ SuperSOT™-8 ® FAST® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ FlashWriter® * XS™ ®* Power-SPM™ FPS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP054N10 Rev. A 8 www.fairchildsemi.com