FDP19N40

FDP19N40 / FDPF19N40 N-Channel MOSFET October FDP19N40 / FDPF19N40 N-Channel MOSFET 400V, 19A, 0.24Ω Features • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A • Low Gate Charge ( Typ. 32nC) • Low Crss ( Typ. 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 215 1.65 -55 to +150 300 19 11.4 76 542 19 21.5 15 40 0.3 FDP19N40 FDPF19N40 400 ±30 19* 11.4* 76* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP19N40 0.6 0.5 62.5 FDPF19N40 3.0 62.5 o Units C/W ©2008 Fairchild Semiconductor Corporation FDP19N40 / FDPF19N40 Rev. A 1 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP19N40 FDPF19N40 Device FDP19N40 FDPF19N40 Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 400V, VGS = 0V VDS = 320V, TC = 125oC VGS = ±30V, VDS = 0V 400 0.5 1 10 ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 9.5A VDS = 20V, ID = 9.5A (Note 4) 3.0 - 0.2 18.3 5.0 0.24 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 320V, ID = 19A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 1590 255 20 32 10 13 2115 340 29 40 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 200V, ID = 19A R G = 25 Ω (Note 4, 5) - 31 70 82 49 72 150 174 108 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 19A VGS = 0V, ISD = 19A dIF/dt = 100A/μs (Note 4) - 349 3.56 19 76 1.4 - A A V ns μC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 3mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 19A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP19N40 / FDPF19N40 Rev. A 2 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 40 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 50 10 ID,Drain Current[A] ID,Drain Current[A] 10 150 C -55 C o o 1 25 C o *Notes: 1. 250μs Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250μs Pulse Test 0.1 0.03 1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.40 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 80 RDS(ON) [Ω], Drain-Source On-Resistance IS, Reverse Drain Current [A] 0.35 150 C o 0.30 VGS = 10V 10 25 C o 0.25 VGS = 20V 0.20 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 2. 250μs Pulse Test 0.15 0 10 20 30 ID, Drain Current [A] 40 50 1 0.2 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 3500 3000 2500 2000 1500 1000 500 0 0.1 Crss Ciss Coss Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 200V VDS = 320V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8 Capacitances [pF] *Note: 1. VGS = 0V 2. f = 1MHz 6 4 2 *Note: ID = 19A 0 1 10 VDS, Drain-Source Voltage [V] 30 0 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 35 FDP19N40 / FDPF19N40 Rev. A 3 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -75 *Notes: 1. VGS = 10V 2. ID = 9.5A BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area - FDP19N40 200 100 100μs 10μs Figure 10. Maximum Safe Operating Area 20 ID, Drain Current [A] 1ms 10ms DC 16 ID, Drain Current [A] 800 10 12 1 Operation in This Area is Limited by R DS(on) 8 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 4 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP19N40 1 Thermal Response [ZθJC] 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 *Notes: 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) o 0.01 Single pulse 0.003 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP19N40 / FDPF19N40 Rev. A 4 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP19N40 / FDPF19N40 Rev. A 5 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP19N40 / FDPF19N40 Rev. A 6 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) ) (45° 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP19N40 / FDPF19N40 Rev. A 7 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP19N40 / FDPF19N40 Rev. A 8 FDP19N40 / FDPF19N40 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I37 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP19N40 / FDPF19N40 Rev. A 9 www.fairchildsemi.com