FDP5800

FDP5800 N-Channel Logic Level PowerTrench® MOSFET November 2006 FDP5800 N-Channel Logic Level PowerTrench® MOSFET 60V,80A, 6mΩ Features • RDS(on) = 4.6mΩ (Typ.), VGS = 10V, ID = 80A • High performance trench technology for extermly low Rdson • Low gate Charge • High power and current handing capability • RoHs Compliant tm Applications • Motor/ Body Load Control • Power Train Management • Injection Systems • DC-AC Converters and UPS D G TO-220 G DS FDP Series S MOSFET Maximum Ratings TC = 25°C unless otherwise noted* Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Power Dissipation -Continuous (TC = 100oC) -Continuous (TA = 25oC) (Note 1) - Pulsed (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) Ratings 60 ±20 80 80* 14 320 652 242 1.61 -55 to +175 Units V V A A A A mJ W W/°C °C Single Pulsed Avalanche Energy Operating and Storage Temperature Range *Drain current limited by package Thermal Characteristics RθJC RθJA RθJA Thermal Resistance , Junction to Case Thermal Resistance , Junction to Ambient, 1in2 copper pad area Thermal Resistance , Junction to Ambient 0.62 43 62.5 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDP5800 Device FDP5800 Package TO220 Reel Size -Tape Width -Quantity 50 ©2006 Fairchild Semiconductor Corporation FDP5800 Rev. A 1 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TC= 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward ID = 250µA, VGS = 0V, TJ =25oC VDS = 48V VGS = 0V TJ = 150°C 60 --------1 500 ±100 V µA µA nA VGS = ±20V, VDS = 0V On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA VGS = 10V , ID = 80A VGS =4.5V , ID = 80A RDS(on) Static Drain-Source On Resistance VGS = 5V , ID = 80A VGS =10V, ID = 80A TJ = 175oC 1.0 -----4.6 5.9 5.6 10.4 2.5 6.0 7.2 7.0 12.6 V mΩ mΩ mΩ mΩ Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(TH) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V,VGS = 0V f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDS = 30V ID = 80A Ig = 1mA ----------6890 750 295 1.2 112 58 7.0 23 13 18 9160 1000 445 -145 -----pF pF pF Ω nC nC nC nC nC nC Switching Characteristics (VGS = 10V) tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 30V, ID = 80A VGS = 10V, RGEN = 1.5Ω ------37 18 19 55 9 64 85 46 47 120 28 138 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 40A VGS = 0V, ISD = 60A dIF/dt = 100A/µs ------58 106 1.25 1.0 --V V ns nC Notes: 1: L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC FDP5800 Rev. A 2 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 400 * Notes : 1. 250µs Pulse Test 2. TC = 25 C o Figure 2. Transfer Characteristics 1000 VDS = 6V ID,Drain Current[A] 100 ID,Drain Current[A] 100 150 C o 10 25 C o 10 5 0.03 VGS 10.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : 1 -55 C o 0.1 1 VDS,Drain-Source Voltage[V] 0.1 3 1 2 3 4 VGS,Gate-Source Voltage[V] 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1000 VGS = 0V RDS(ON) [mΩ], Drain-Source On-Resistance 5.0 VGS = 10V IS, Reverse Drain Current [A] 100 150 C o o 25 C 4.5 VGS = 20V 10 4.0 * Note : TJ = 25 C o 0 40 80 120 ID, Drain Current [A] 160 200 1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 10000 9000 7500 Capacitances [pF] 6000 4500 3000 1500 100 -1 10 Crss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 25V VDS = 35V VDS = 50V VGS, Gate-Source Voltage [V] 8 6 Coss * Note: 1. VGS = 0V 2. f = 1MHz 4 2 * Note : ID = 80A 10 10 VDS, Drain-Source Voltage [V] 0 1 30 0 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 FDP5800 Rev. A 3 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 2.4 rDS(on), [Normalized] Drain-Source On-Resistance 1.1 2.0 1.6 1.0 1.2 0.9 * Notes : 1. VGS = 0V 2. ID = 250µA 0.8 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.4 -80 * Notes : 1. VGS = 10V 2. ID = 80A -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 10 3 Figure 10. Maximum Drain Current vs. Case Temperature 125 CURRENT LIMITED BY PACKAGE ID, Drain Current [A] 20µs 10 2 100µs ID, Drain Current [A] 2 100 75 10 1 Operation in This Area is Limited by R DS(on) * Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse 0 1ms 10ms o o 50 DC 25 10 0 10 10 VDS, Drain-Source Voltage [V] 1 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 D = 0.5 ZθJC(t),Thermal Response 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 o 0.01 0.01 Single pulse * Notes : 1. ZθJC(t) = 0.62 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 1E-3 -5 10 10 -4 10 10 10 10 t1, Square Wave Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FDP5800 Rev. A 4 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5800 Rev. A 5 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP5800 Rev. A 6 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 FDP5800 Rev. A 7 www.fairchildsemi.com FDP5800 N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I21 FDP5800 Rev. A 8 www.fairchildsemi.com