FDP6N60ZU

FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features • RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 14.5nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series o GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 105 0.85 -55 to +150 300 4.5 2.7 18 150 4.5 10.5 20 33.8 0.27 FDP6N60ZU FDPF6N60ZUT 600 ±30 4.5* 2.7* 18* Units V V A A mJ A mJ V/ns W W/oC o o Single Pulsed Avalanche Energy Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP6N60ZU 1.2 0.5 62.5 FDPF6N60ZUT 3.7 62.5 o Units C/W ©2009 Fairchild Semiconductor Corporation FDP6N60ZU / FDPF6N60ZUT Rev. A 1 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP6N60ZU FDPF6N60ZUT Device FDP6N60ZU FDPF6N60ZUT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC ID = 250μA, Referenced to 25oC VDS = 600V, VGS = 0V VDS = 480V, TC = 125oC VGS = ±30V, VDS = 0V 600 0.75 25 250 ±10 V V/oC μA μA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250μA VGS = 10V, ID = 2.25A VDS = 40V, ID = 2.25A 3.0 1.7 3.5 5.0 2.0 V Ω S Dynamic Characteristics Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 480V, ID = 4.5A VGS = 10V (Note 4) VDS = 25V, VGS = 0V f = 1MHz - 650 75 5 14.5 4 6 865 100 10 20 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 300V, ID = 4.5A RG = 25Ω, VGS = 10V (Note 4) - 19 25 25 45 48 60 60 100 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4.5A VGS = 0V, ISD = 4.5A dIF/dt = 100A/μs 36 37 4.5 18 1.6 A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 15mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics FDP6N60ZU / FDPF6N60ZUT Rev. A 2 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 10 ID,Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 1 150 C 25 C o o *Notes: 1. 250μs Pulse Test 2. TC = 25 C o 0.1 0.1 0.1 1 10 VDS,Drain-Source Voltage[V] 20 2 4 6 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 100 RDS(ON) [mΩ], Drain-Source On-Resistance 2.4 IS, Reverse Drain Current [A] 2.1 VGS = 10V VGS = 20V 150 C o 10 25 C o 1.8 1.5 0 3 *Note: TC = 25 C o *Notes: 1. VGS = 0V 1 12 2. 250μs Pulse Test 6 ID, Drain Current [A] 9 0 1 2 VSD, Body Diode Forward Voltage [V] 3 Figure 5. Capacitance Characteristics 1500 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 150V VDS = 300V VDS = 480V 8 Capacitances [pF] 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 6 Ciss 4 500 2 *Note: ID = 4.5A Crss 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 5 10 Qg, Total Gate Charge [nC] 15 FDP6N60ZU / FDPF6N60ZUT Rev. A 3 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.16 BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 ID, Drain Current [A] Figure 8. Maximum Safe Operating Area - FDPF6N60ZUT 30 10 100μs 1ms 20μs 1.08 1.04 1.00 0.96 0.92 0.88 -100 *Notes: 1. VGS = 0V 2. ID = 250μA 1 Operation in This Area is Limited by R DS(on) 10ms DC 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 6 ID, Drain Current [A] 4 Limited by package 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT 5 Thermal Response [ZθJC] 0.5 1 0.2 0.1 0.05 PDM t1 0.1 0.02 0.01 Single pulse *Notes: t2 o 1. ZθJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -5 10 10 -4 10 10 10 1 Rectangular Pulse Duration [sec] -3 -2 -1 10 10 2 FDP6N60ZU / FDPF6N60ZUT Rev. A 4 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP6N60ZU / FDPF6N60ZUT Rev. A 5 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP6N60ZU / FDPF6N60ZUT Rev. A 6 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 FDP6N60ZU / FDPF6N60ZUT Rev. A 7 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 2.54TYP [2.54 ±0.20] 4.70 ±0.20 0.50 –0.05 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters 15.87 ±0.20 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT Rev. A 8 FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP6N60ZU / FDPF6N60ZUT Rev. A 9 www.fairchildsemi.com